scholarly journals Modeling and simulation of a turbulent‐like thermal plasma jet for nanopowder production

2018 ◽  
Vol 14 (1) ◽  
pp. 16-28 ◽  
Author(s):  
Masaya Shigeta
Keyword(s):  
Modeling And Simulation ◽  
Thermal Plasma ◽  
Plasma Jet ◽  
Thermal Plasma Jet

Control of substrate surface temperature in millisecond annealing technique using thermal plasma jet

2007 ◽  
Vol 515 (12) ◽  
pp. 4897-4900 ◽  
Author(s):  
T. Okada ◽  
S. Higashi ◽  
H. Kaku ◽  
N. Koba ◽  
H. Murakami ◽  
...  
Keyword(s):  
Surface Temperature ◽  
Thermal Plasma ◽  
Substrate Surface ◽  
Plasma Jet ◽  
Thermal Plasma Jet

A new crystallization technique of Si films on glass substrate using thermal plasma jet

2005 ◽  
Vol 244 (1-4) ◽  
pp. 8-11 ◽  
Author(s):  
H. Kaku ◽  
S. Higashi ◽  
H. Taniguchi ◽  
H. Murakami ◽  
S. Miyazaki
Keyword(s):  
Thermal Plasma ◽  
Glass Substrate ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Si Films

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

Spatial Dynamics of Coherent Structures in a Thermal Plasma Jet

2008 ◽  
Vol 36 (4) ◽  
pp. 1066-1067 ◽  
Author(s):  
J. Hlina ◽  
Z. Sekeresova ◽  
J. Sonsky
Keyword(s):  
Coherent Structures ◽  
Thermal Plasma ◽  
Spatial Dynamics ◽  
Plasma Jet ◽  
Thermal Plasma Jet

Fabrication of dispersible graphene flakes using thermal plasma jet and their thin films for solar cells

Carbon ◽  
2016 ◽  
Vol 106 ◽  
pp. 48-55 ◽  
Author(s):  
Myung Woo Lee ◽  
Hyun-Young Kim ◽  
Hyeokjin Yoon ◽  
Juhan Kim ◽  
Jung Sang Suh
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Thermal Plasma ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Graphene Flakes

Characteristics of graphene quantum dots determined by edge structures: three kinds of dots fabricated using thermal plasma jet

RSC Advances ◽  
2015 ◽  
Vol 5 (83) ◽  
pp. 67669-67675 ◽  
Author(s):  
Myung Woo Lee ◽  
Juhan Kim ◽  
Jung Sang Suh
Keyword(s):  
Quantum Dots ◽  
Thermal Plasma ◽  
Graphene Quantum Dots ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Model Structures

Model structures of the three types of graphene quantum dots; armchair (red), zigzag (blue), and hybrid (yellow) GQDs.

Insulating Material Erosion in Atmospheric Non-Thermal Plasma Jet Device

2016 ◽  
Vol 3 (3) ◽  
pp. 663 ◽  
Author(s):  
Kamal M Ahmed ◽  
Tarek M Allam ◽  
Mohamed Anwar Abouelatta ◽  
Sayed A Ward ◽  
Ahmed A Lashin ◽  
...  
Keyword(s):  
Thermal Plasma ◽  
Operation Time ◽  
Plasma Jet ◽  
Input Voltage ◽  
Nitrogen Gas ◽  
Insulating Material ◽  
Thermal Plasma Jet ◽  
Material Erosion ◽  
Erosion Area ◽  
Non Thermal Plasma

This paper reports on the selection of insulating material types in a developed atmospheric-pressure non-thermal plasma jet (ANPJ-II) device which was operated previously in our laboratory based on the minimum erosion area of the insulator’s nozzle. Three identical insulator groups used in our experiment include; Teflon insulator material with different thicknesses of 1.5 mm and 2 mm respectively, and Ceramic insulating material with thickness of 2 mm. ANPJ-II device is operated with each of the three insulator groups. These insulators are operated and analyzed with different operation times for compressed Air or Nitrogen gas with a flow rate of 12 L/min and input voltage of 6 kV.  The erosion area of these insulator materials is measured as a function of the operation time. The Ceramic insulator was found to have the minimum erosion area. Also, the temperature of both the cathode and the insulating material (Teflon or Ceramic) are measured to study the effect of operation time and the gas type on the device components.

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