A new crystallization technique of Si films on glass substrate using thermal plasma jet

2005 ◽  
Vol 244 (1-4) ◽  
pp. 8-11 ◽  
Author(s):  
H. Kaku ◽  
S. Higashi ◽  
H. Taniguchi ◽  
H. Murakami ◽  
S. Miyazaki
Keyword(s):  
Thermal Plasma ◽  
Glass Substrate ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Si Films

Crystallization of Si films on glass substrate using thermal plasma jet

2005 ◽  
Vol 487 (1-2) ◽  
pp. 122-125 ◽  
Author(s):  
S. Higashi ◽  
H. Kaku ◽  
H. Taniguchi ◽  
H. Murakami ◽  
S. Miyazaki
Keyword(s):  
Thermal Plasma ◽  
Glass Substrate ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Si Films

scholarly journals Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation

2007 ◽  
Vol 32 (2) ◽  
pp. 465-468
Author(s):  
T. Yorimoto ◽  
S. Higashi ◽  
H. Kaku ◽  
T. Okada ◽  
H. Murakami ◽  
...  
Keyword(s):  
Thermal Plasma ◽  
Plasma Jet ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
Si Films

Correlation Between Annealing Temperature and Crystallinity of Si Films Prepared by Thermal Plasma Jet Crystallization Technique

2006 ◽  
Vol 910 ◽  
Author(s):  
Hirotaka Kaku ◽  
Seiichiro Higashi ◽  
Tatsuya Okada ◽  
Hideki Murakami ◽  
Seiichi Miyazaki
Keyword(s):  
Phase Transformation ◽  
Thermal Plasma ◽  
Crystalline State ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Plasma Jet ◽  
Solid Phase Crystallization ◽  
Thermal Plasma Jet ◽  
Amorphous Si ◽  
Si Films

AbstractTransient reflectivity of amorphous Si (a-Si) films during thermal plasma jet (TPJ) irradiation has been measured to characterize the phase transformation in millisecond time domain. The a-Si films first transform to crystalline by solid phase crystallization (SPC) followed by melting of the film, and then solidifies to the final crystalline state. By increasing the SPC temperature from about 1100 K to 1300 K, the duration of phase transformation decreases from about 1 ms to 100 μs. The crystallinity of the SPC films is improved not only by annealing the films at a high temperature but also annealing them with longer duration.

Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate

2006 ◽  
Vol 45 (5B) ◽  
pp. 4355-4357 ◽  
Author(s):  
Tatsuya Okada ◽  
Seiichiro Higashi ◽  
Hirotaka Kaku ◽  
Naohiro Koba ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Temperature Profile ◽  
Thermal Plasma ◽  
Quartz Substrate ◽  
Plasma Jet ◽  
Transient Temperature ◽  
Thermal Plasma Jet ◽  
Si Films
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