The observation of induced stresses in cadmium telluride films grown on Si by closed hot wall epitaxy system

Ellipsometric analysis of CdTe films grown on Si and CdHgTe substrates at the “hot-wall” epitaxy vacuum setup has been performed. It has been found that ellipsometric data calculation carried out by using a simple one-layer film model leads to radical distortion of optical constants spectra: this fact authenticates the necessity to attract a more complicated model that should include heterogeneity of films. Ellipsometric data calculation within a two-layer film model permitted to conclude that cadmium telluride films have an outer layer that consists of the three-component mixture of CdTe, cavities, and basic matter oxide. Ratio of mixture components depends on the time of deposition, that is, on the film thickness. The inner layer consists of cadmium telluride.

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Preparation of Thin Cadmium Telluride Samples for Electron Microscope Studies

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100052754 ◽

1974 ◽

Vol 32 ◽

pp. 548-549

Author(s):

T. J. Magee ◽

J. Peng ◽

J. Bean

Keyword(s):

Electron Microscope ◽

Sulfuric Acid ◽

Solid State ◽

Sample Preparation ◽

Cadmium Telluride ◽

Potassium Dichromate ◽

Optical Components ◽

The Past ◽

Solid State Devices

Cadmium telluride has become increasingly important in a number of technological applications, particularly in the area of laser-optical components and solid state devices, Microstructural characterizations of the material have in the past been somewhat limited because of the lack of suitable sample preparation and thinning techniques. Utilizing a modified jet thinning apparatus and a potassium dichromate-sulfuric acid thinning solution, a procedure has now been developed for obtaining thin contamination-free samples for TEM examination.

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Morphologies of Nonadherent Al2O3 and Matching Substrate Surfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009587x ◽

1972 ◽

Vol 30 ◽

pp. 524-525

Author(s):

C. S. Giggins ◽

J. K. Tien ◽

B. H. Kear ◽

F. S. Pettit

Keyword(s):

Electron Microscopy ◽

Oxide Scale ◽

Oxidation Resistance ◽

Substrate Surface ◽

Morphological Features ◽

Thermally Induced ◽

Oxide Spallation ◽

Oxidation Resistant ◽

Induced Stresses ◽

Substrate Surfaces

The performance of most oxidation resistant alloys and coatings is markedly improved if the oxide scale strongly adheres to the substrate surface. Consequently, in order to develop alloys and coatings with improved oxidation resistance, it has become necessary to determine the conditions that lead to spallation of oxides from the surfaces of alloys. In what follows, the morphological features of nonadherent Al2O3, and the substrate surfaces from which the Al2O3 has spalled, are presented and related to oxide spallation.The Al2O3, scales were developed by oxidizing Fe-25Cr-4Al (w/o) and Ni-rich Ni3 (Al,Ta) alloys in air at 1200°C. These scales spalled from their substrates upon cooling as a result of thermally induced stresses. The scales and the alloy substrate surfaces were then examined by scanning and replication electron microscopy.The Al2O3, scales from the Fe-Cr-Al contained filamentary protrusions at the oxide-gas interface, Fig. 1(a). In addition, nodules of oxide have been developed such that cavities were formed between the oxide and the substrate, Fig. 1(a).

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The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131747 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1422-1423

Author(s):

A.M. Letsoalo ◽

M.E. Lee ◽

E.O. de Neijs

Keyword(s):

Electrical Properties ◽

Cadmium Telluride ◽

Methanol Solution ◽

Electrical Characteristics ◽

Metal Contacts ◽

Deposition Technique ◽

Interfacial Layers ◽

Semiconductor Contacts ◽

Grown Single Crystal ◽

Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

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