Ellipsometric Analysis of Cadmium Telluride Films’ Structure

Ellipsometric analysis of CdTe films grown on Si and CdHgTe substrates at the “hot-wall” epitaxy vacuum setup has been performed. It has been found that ellipsometric data calculation carried out by using a simple one-layer film model leads to radical distortion of optical constants spectra: this fact authenticates the necessity to attract a more complicated model that should include heterogeneity of films. Ellipsometric data calculation within a two-layer film model permitted to conclude that cadmium telluride films have an outer layer that consists of the three-component mixture of CdTe, cavities, and basic matter oxide. Ratio of mixture components depends on the time of deposition, that is, on the film thickness. The inner layer consists of cadmium telluride.

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A multi-layer film model for formation mechanism of bright whiteness in beetle scale

2009 International Conference on Mechatronics and Automation ◽

10.1109/icma.2009.5246524 ◽

2009 ◽

Author(s):

Xiaoping Li ◽

Zirong Tang ◽

Rizwan Malik ◽

Tielin Shi ◽

Wuxing Lai ◽

...

Keyword(s):

Formation Mechanism ◽

Layer Film ◽

Film Model ◽

Multi Layer Film

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Growth of (111) and (100) CdTe films on (100) GaAs substrates by hot wall epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90747-9 ◽

1988 ◽

Vol 86 (1-4) ◽

pp. 382-385 ◽

Cited By ~ 24

Author(s):

R. Korenstein ◽

B. MacLeod

Keyword(s):

Gaas Substrates ◽

Cdte Films ◽

Hot Wall Epitaxy

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Optical Constants of Cadmium Telluride Thin Film

10.1063/1.2927553 ◽

2008 ◽

Author(s):

P. Nithyakalyani ◽

M. Pandiaraman ◽

P. Pannir ◽

C. Sanjeeviraja ◽

N. Soundararajan ◽

...

Keyword(s):

Thin Film ◽

Cadmium Telluride ◽

Optical Constants

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Growth of (100) and (111) CdTe films on (100) GaAs by hot-wall epitaxy

phys stat sol (a) ◽

10.1002/pssa.2210990148 ◽

1987 ◽

Vol 99 (1) ◽

pp. K41-K44 ◽

Cited By ~ 2

Author(s):

P. Schäfer ◽

H. Niebsch

Keyword(s):

Cdte Films ◽

Hot Wall Epitaxy

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Thermoelectric power for thermally deposited cadmium telluride films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v13i26.281 ◽

2019 ◽

Vol 13 (26) ◽

pp. 38-41

Author(s):

M. F. A. Alias

Keyword(s):

Thermoelectric Power ◽

Cadmium Telluride ◽

Thermal Evaporation ◽

Thermal Evaporation Method ◽

Evaporation Method ◽

Corning Glass ◽

Glass Slides ◽

Type Semiconductor ◽

Cdte Films ◽

P Type

Thermal evaporation method has used for depositing CdTe filmson corning glass slides under vacuum of about 10-5mbar. Thethicknesses of the prepared films are400 and 1000 nm. The preparedfilms annealed at 573 K. The structural of CdTe powder and preparedfilms investigated. The hopping and thermal energies of as depositedand annealed CdTe films studied as a function of thickness. Apolycrystalline structure observed for CdTe powder and preparedfilms. All prepared films are p-type semiconductor. The hoppingenergy decreased as thickness increased, while thermal energyincreased.

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Epitaxial Layer Misorientation in CdTe on GaAs‡

MRS Proceedings ◽

10.1557/proc-202-543 ◽

1990 ◽

Vol 202 ◽

Author(s):

H. E. Inglefield ◽

R. J. Matyi ◽

R. Korenstein

Keyword(s):

Epitaxial Layer ◽

Gaas Substrate ◽

Dislocation Model ◽

Azimuthal Direction ◽

X Ray Diffraction ◽

Azimuthal Dependence ◽

X Ray ◽

Gaas Substrates ◽

Cdte Films ◽

Hot Wall Epitaxy

ABSTRACTX-ray diffraction has been used to characterize the relative misorientation of [001] and [111] CdTe layers grown by hot-wall epitaxy on GaAs substrates. The magnitude of the misorientation of the CdTe epitaxial layer relative to the GaAs substrate depends on the magnitude of the miscut of the substrate; in addition, the [111] oriented CdTe exhibited significantly larger misorientations than did the [001] CdTe films. The azimuthal direction of the tilt of the epitaxial layer depends strongly on the nominal crystallographic orientation of the film. The [111] CdTe exhibited an azimuthal dependence of the tilt that is approximately coincident with the miscut of the substrate, while the azimuthal direction of tilt in the [001] CdTe layers differed from the substrate miscut direction by as much as 116°. These observations of epitaxial layer misorientation are discussed in terms of a dislocation model for layer tilt and azimuthal rotation in lattice-mismatched epitaxial systems.

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Variation of optical constants of cadmium telluride thin films with deposition conditions

Thin Solid Films ◽

10.1016/0040-6090(94)06416-4 ◽

1995 ◽

Vol 259 (2) ◽

pp. 194-202 ◽

Cited By ~ 13

Author(s):

N. El-Kadry ◽

A. Ashour ◽

M.F. Ahmed ◽

K. Abdel-Hady

Keyword(s):

Thin Films ◽

Cadmium Telluride ◽

Optical Constants ◽

Deposition Conditions

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CHARACTERIZATION OF TRIS (8-HYDROXYQUINOLINE) ALUMINUM (Alq3) FILM USING SPECTROSCOPIC ELLIPSOMETRY

International Journal of Modern Physics B ◽

10.1142/s0217979206041343 ◽

2006 ◽

Vol 20 (25n27) ◽

pp. 4353-4358 ◽

Cited By ~ 2

Author(s):

YONG JAI CHO ◽

HYUN JONG KIM ◽

WON CHEGAL ◽

HYUN MO CHO ◽

UN BONG BAEK ◽

...

Keyword(s):

Band Gap ◽

Spectroscopic Ellipsometry ◽

Silicon Substrate ◽

Optical Constants ◽

Dispersion Function ◽

Film Model ◽

Data Inversion ◽

A Value ◽

Organic Sample

We have applied spectroscopic ellipsometry to obtain the optical constants, i.e., refractive indices (n) and extinction coefficients (k) of a thin tris (8-hydroxyquinoline) aluminum ( Alq 3) film evaporated on the top of 300-nm-thick SiO 2 layer on a silicon substrate. Using a spectroscopic ellipsometer we collected the ellipsometric data of Ψ and Δ at 3 incident angles of 65°, 70° and 75° and 226 energies of 1.5 eV to 6.0 eV. For the organic sample, we adopted a simple two-film model consisting of ambient/organic film/ SiO 2 film/silicon substrate. Using the multiple oscillators of Tauc-Lorentz (TL) dispersion function and the two-film model, we obtained the thickness of the Alq 3 film. By data inversion technique, the spectra of n and k for the Alq 3 film are calculated from measured Ψ and Δ at each photon energy when the film thickness is fixed to a value obtained by the TL dispersion fitting. The extrapolation of optical function near band gap yields the band gap of 2.64 eV for Alq 3 film.

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