Theoretical study on the behaviour of metal-p-n-Si Schottky barrier solar cell

Pramana ◽  
1979 ◽  
Vol 13 (1) ◽  
pp. 39-45 ◽  
Author(s):  
G S R Krishna Murthy ◽  
A P B Sinha

Author(s):  
Olusola Akinbami ◽  
Grace N Ngubeni ◽  
Francis Otieno ◽  
Rudo Kadzutu-Sithole ◽  
Cebisa Linganiso ◽  
...  

2D hybrid perovskites are promising materials for solar cell applications, in particular, cesium based perovskite nanocrystals as they offer the stability that is absent in organic-inorganic perovskite. However, the most...



1995 ◽  
Vol 377 ◽  
Author(s):  
X. Deng ◽  
S. J. Jones ◽  
J. Evans ◽  
M. Izu

ABSTRACTThe Schottky barrier device with a metal/a-Si (n+) /a-Si alloy/metal structure has been widely used as an alternative evaluation tool for the photovoltaic performance of a-Si alloy material since it more reliably reflects the carrier transport in a solar cell than the conventional material characterization tool such as PDS, CPM, and SSPG, and is easier to be fabricated compared with a complete nip solar cell. However, a multiple chamber device making system is still needed to fabricate such a device since one does not want to deposit the a-Si intrinsic material to be studied together with an n+ layer in the same chamber. We have explored the use of a Schottky barrier device deposited on heavily doped n-type crystalline wafer substrate, c-Si (n+) /a-Si alloy/metal, as an evaluation tool for a-Si alloy materials. In this device, besides the evaporation of a thin semi-transparent metal layer, only the active a-Si alloy layer needs to be deposited using the plasma enhanced or other deposition techniques. We have compared the performance of such a device with that of reference n-i-p solar cells deposited at the same time and demonstrated that the FF measured under weak red light show a good correlation between these two types of devices. Therefore the c-Si (n+) /a-Si alloy/metal device can be used as a convenient technique to reliably evaluate the material performance in a solar cell device.



2015 ◽  
Vol 17 (3) ◽  
pp. 2094-2103 ◽  
Author(s):  
R. F. Jin ◽  
Y. F. Chang

Theoretical investigations show that star-shaped molecules are expected to be promising candidates for charge transfer and donor materials for OSCs.



2020 ◽  
Vol 835 ◽  
pp. 155268 ◽  
Author(s):  
Chao Geng ◽  
Yudong Shang ◽  
JiaJia Qiu ◽  
Qidi Wang ◽  
Xiuhua Chen ◽  
...  


2020 ◽  
Vol 44 (35) ◽  
pp. 15289-15296
Author(s):  
Fulan Zhang ◽  
Binfang Yuan ◽  
Jianhua Xu ◽  
Huisheng Huang ◽  
Laicai Li

A new molecular design for solar cell materials is reported for the silicon-doped 4,7-di(5-bromothiophen-2-yl)-2,1,3-benzothiadiazole adsorbed on ZnSe(100) and ZnSe(111) surfaces.



2014 ◽  
Vol 137 (2) ◽  
Author(s):  
Nguyen Ngoc Ha ◽  
Mai Anh Tuan ◽  
Dang Xuan Thu ◽  
Luong T. Thu Thuy

This paper reports the application of the Ru2+, Cu+, and Fe2+ complexes in form of RuL2(SCN)2, CuL2(SCN)2− for dye-sensitized solar cell (DSSC) development. The calculation results, given by quantum chemistry, demonstrated that the complex containing copper is more suitable than the one containing iron. The modification of Cu(I) complex by using various numbers of ligands enhanced photon absorption capacity as well as the absorption range. The addition of an organic ligand such as an electron attraction group to the benzene ring gave a better result as compared to the inorganic ones. Based on the analysis conducted, CuM2(SCN)2− is considered as potential material for N3 replacement.





1981 ◽  
Vol 20 (2) ◽  
pp. L127-L129 ◽  
Author(s):  
Jun Tsukamoto ◽  
Hiroji Ohigashi ◽  
Kiichiro Matsumura ◽  
Akio Takahashi


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