Self-ordered quantum dots: A new growth mode on high-index semiconductor surfaces

2007 ◽  
pp. 103-122 ◽  
Author(s):  
Richard Nötzel ◽  
Jiro Temmyo ◽  
Atsuo Kozen ◽  
Toshiaki Tamamura ◽  
Takashi Fukui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Index ◽  
Growth Mode ◽  
Semiconductor Surfaces

Ordered Quantum Dots: A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces

1995 ◽  
Author(s):  
Richard NOTZEL ◽  
Jiro TEMMYO ◽  
Atsuo KOZEN ◽  
Toshiaki TAMAMURA ◽  
Takashi FUKUI ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Index ◽  
Growth Mode ◽  
Semiconductor Surfaces ◽  
Self Organizing

Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski–Krastanow growth mode

1997 ◽  
Vol 70 (24) ◽  
pp. 3278-3280 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Doo-Cheol Park ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Quantum Dots ◽  
Growth Mode ◽  
Cdse Quantum Dots ◽  
Self Organized

Stranski–Krastanov growth mode in Ge/Si(001) self-assembled quantum dots

2003 ◽  
Vol 253 (1-4) ◽  
pp. 190-197 ◽  
Author(s):  
S.N. Santalla ◽  
C. Kanyinda-Malu ◽  
R.M. de la Cruz
Keyword(s):  
Quantum Dots ◽  
Growth Mode ◽  
Self Assembled

Growth Evolution of (Zn,Cd)Se Quantum Dots Deduced from Spatially Resolved Structural and Optical Characterization

1999 ◽  
Vol 571 ◽  
Author(s):  
K. Leonard ◽  
D. Hommel ◽  
A. Stockmann ◽  
H. Selke ◽  
J. Seufert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Direction ◽  
Growth Mode ◽  
Gradual Transition ◽  
Mode Transition ◽  
Spatially Resolved ◽  
Composition Fluctuations

ABSTRACTThe growth mode of CdSe layers grown by migration enhanced epitaxy between ZnSe barriers has been investigated. In situ reflection high-energy electron diffraction shows a gradual transition to a three-dimensional growth mode which, however, is not accompanied by a change of the surface lattice constant. High-resolution transmission electron micrographs reveal a strong Cd diffusion, leading to ternary ZnCdSe quantum wells. Furthermore. composition fluctuations perpendicular to the growth direction on a nanometer scale are found already prior to the beginning of the growth mode transition. In the case of heterostructures containing a CdSe layer that has undergone the growth mode transition, micrographs show Cd-rich quantum dots with diameters of around 8 nm and heights of around 1.5 nm within a ternary quantum well. By spatially resolved photoluminescence the emission from single quantum dots could be observed. The polarization dependence of the emission from single dots indicates an asymmetric shape of the dots with certain preferential orientations along the [110] and [110] directions.

scholarly journals PbSe quantum dots grown in a high-index, low-melting-temperature glass for infrared laser applications

2013 ◽  
Author(s):  
P. Kannan ◽  
A. Choudhary ◽  
B. Mills ◽  
V. M. Leonard ◽  
D. W. Hewak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Melting Temperature ◽  
Infrared Laser ◽  
High Index ◽  
Laser Applications

Growth of GaSb and AlSb quantum dots on high-index GaAs substrates

2014 ◽  
Vol 7 (5) ◽  
pp. 055502 ◽  
Author(s):  
Takuya Kawazu ◽  
Takeshi Noda ◽  
Takaaki Mano ◽  
Yoshiki Sakuma ◽  
Hiroyuki Sakaki
Keyword(s):  
Quantum Dots ◽  
High Index ◽  
Gaas Substrates

High field magnetoluminescence spectroscopy of self-assembled (InGa)As quantum dots on high index planes

1998 ◽  
Vol 246-247 ◽  
pp. 93-96 ◽  
Author(s):  
R.K Hayden ◽  
K Uchida ◽  
N Miura ◽  
A Polimeni ◽  
S.T Stoddart ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Field ◽  
High Index ◽  
Self Assembled

scholarly journals Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Christopher F. Schuck ◽  
Simon K. Roy ◽  
Trent Garrett ◽  
Qing Yuan ◽  
Ying Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Tensile Strain ◽  
Quantum Systems ◽  
Growth Mode ◽  
Wetting Layer ◽  
Precise Control ◽  
Growth Regime ◽  
Inp Substrates ◽  
Lattice Matched

AbstractDriven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we can continually increase WL thickness with increasing GaAs deposition, even after the tensile-strained QDs (TSQDs) have begun to form. This anomalous SK behavior enables simultaneous tuning of both TSQD size and WL thickness. No such departure from the canonical SK growth regime has been reported previously. As such, we can now modify QD-WL interactions, with future benefits that include more precise control of TSQD band structure for infrared optoelectronics and quantum optics applications.

Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode

2009 ◽  
Vol 8 (2) ◽  
pp. 269-274 ◽  
Author(s):  
J. Tatebayashi ◽  
Baolai Liang ◽  
D.A. Bussian ◽  
H. Htoon ◽  
Shenghong Huang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Growth Mode ◽  
Optical Characteristics ◽  
Type Ii

Overlayer strain: A key to directly tune the topography of high‐index semiconductor surfaces

1993 ◽  
Vol 63 (24) ◽  
pp. 3300-3302 ◽  
Author(s):  
Eric Tournié ◽  
Richard Nötzel ◽  
Klaus H. Ploog
Keyword(s):  
High Index ◽  
Semiconductor Surfaces
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