Diffusion studies in non-oxide ceramics: analytical aspects of the use of ion implanted stable tracers and SIMS

ABSTRACTSelf-diffusion studies are vital in the elucidation of atomic mechanisms of diffusion; as well as in the better understanding of device fabrication processes, such as the annealing of ion-implanted layers. This review outlines first the major reasons for interest in self-diffusion in III–V and II–VI compounds. It discusses the main differences with elemental semiconductors, including the wide variety of possible defects in the compounds, the role of departures from stoichiometry, and the value of tracer and interdiffusion studies. Self-diffusion studies in III–V compounds are next reviewed, including recent measurements in GaAs, where more information on diffusion mechanisms is becoming available. Interdiffusion between different III–V compounds is also discussed in the light of self-diffusion studies. Next, recent progress on self-diffusion in certain II–VI compounds is discussed, where interdiffusion studies have also provided a significant contribution. The review concludes by suggesting areas where research is urgently needed to clarify diffusion mechanisms.

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Activation and diffusion studies of ion-implanted p and n dopants in germanium

Applied Physics Letters ◽

10.1063/1.1618382 ◽

2003 ◽

Vol 83 (16) ◽

pp. 3275-3277 ◽

Cited By ~ 248

Author(s):

Chi On Chui ◽

Kailash Gopalakrishnan ◽

Peter B. Griffin ◽

James D. Plummer ◽

Krishna C. Saraswat

Keyword(s):

Diffusion Studies ◽

And Diffusion ◽

Ion Implanted

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Temperature dependence of up-take and release of H in near surfaces of D+ ion implanted proton conducting oxide ceramics

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2007.01.104 ◽

2007 ◽

Vol 257 (1-2) ◽

pp. 541-544 ◽

Cited By ~ 4

Author(s):

B. Tsuchiya ◽

K. Morita ◽

S. Nagata ◽

K. Toh ◽

T. Shikama

Keyword(s):

Temperature Dependence ◽

Oxide Ceramics ◽

Proton Conducting ◽

Ion Implanted

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Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100054765 ◽

1982 ◽

Vol 40 ◽

pp. 460-461

Author(s):

P. Ling ◽

R. Gronsky ◽

J. Washburn

Keyword(s):

Electron Diffraction ◽

Ion Implantation ◽

Diffraction Analysis ◽

Diffraction Pattern ◽

Direct Consequence ◽

The Other ◽

Electron Diffraction Analysis ◽

Defect Microstructures ◽

Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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Defects in ion implanted silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100109070 ◽

1978 ◽

Vol 36 (1) ◽

pp. 386-387

Author(s):

J.A. Lambert ◽

P.S. Dobson

Keyword(s):

Defect Structure ◽

Dislocation Loops ◽

Frank Loop ◽

Burgers Vector ◽

Temperature Range ◽

Perfect Dislocation ◽

Contrast Analysis ◽

Image Position ◽

Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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A technique to prepare cross-sectional TEM specimens of semiconducting devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010014508x ◽

1986 ◽

Vol 44 ◽

pp. 742-743

Author(s):

A. K. Rai ◽

P. P. Pronko

Keyword(s):

Thin Films ◽

Surface Region ◽

Sample Surface ◽

Specific Region ◽

Cross Sectional ◽

Thin Sections ◽

The Past ◽

Device Structures ◽

Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

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Preparation of Backthinned Ceramic Specimens

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100117881 ◽

1985 ◽

Vol 43 ◽

pp. 182-183

Author(s):

A. T. Fisher ◽

P. Angelini

Keyword(s):

Electron Microscopy ◽

Analytical Electron Microscopy ◽

Vacuum System ◽

Back Surface ◽

Surface Microstructure ◽

Ion Milling ◽

Near Surface ◽

Depth Profiles ◽

Analytical Electron ◽

Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

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