Ferroelectric characteristics of MFIS structure with P(VDF–TrFE)/BaTiO3 nanocomposite as ferroelectric layer

AbstractA comparison of pulsed laser deposited PbZr0.53Ti0.47O3 (PZT) thin film capacitors with SrRuO3 (SRO) and LaNiO3 (LNO) electrodes on (001) yttria-stabilized zirconia (YSZ) and lattice matched (001) LaAlO3 substrates is presented. Both electrode materials allow for the formation of ferroelectric capacitors with large remnant polarization (20-30 μC/cm2) and negligible fatigue, although slight differences arise regarding the promotion of either the rhombohedral or tetragonal phases of PZT. Far more crucial seems to be the tendency of SrRuO3 to develop a rougher surface at either small (<30 nm) or large thickness (>100 nm), and on YSZ substrates. In those cases a highly defective and possibly low dielectric interface forms between the electrode and the ferroelectric layer, resulting in greatly degraded ferroelectric performance. LaNiO3 is free from these limitations except for the cracks forming at very large thickness (>300 nm), and therefore appears as a more versatile electrode material.

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Simulation study on ferroelectric layer thickness dependence RF/Analog and linearity parameters in ferroelectric tunnel junction TFET

Microelectronics Journal ◽

10.1016/j.mejo.2021.105081 ◽

2021 ◽

Vol 113 ◽

pp. 105081

Author(s):

Rajesh Saha

Keyword(s):

Layer Thickness ◽

Simulation Study ◽

Tunnel Junction ◽

Thickness Dependence ◽

Ferroelectric Layer ◽

Ferroelectric Tunnel Junction

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Dry etching of magnesium oxide thin films by using inductively coupled plasma for buffer layer of MFIS structure

Thin Solid Films ◽

10.1016/j.tsf.2006.10.087 ◽

2007 ◽

Vol 515 (12) ◽

pp. 4955-4959 ◽

Cited By ~ 6

Author(s):

Gwan-Ha Kim ◽

Chang-Il Kim

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Magnesium Oxide ◽

Inductively Coupled Plasma ◽

Dry Etching ◽

Oxide Thin Films ◽

Inductively Coupled ◽

Mfis Structure

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Construction of MFIS Structure Using Alkoxy-Derived (Y,Yb)MnO3 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.269.49 ◽

2004 ◽

Vol 269 ◽

pp. 49-52 ◽

Cited By ~ 3

Author(s):

Kazuyuki Suzuki ◽

Kiyotaka Tanaka ◽

De Sheng Fu ◽

Kaori Nishizawa ◽

Takeshi Miki ◽

...

Keyword(s):

Thin Films ◽

Mfis Structure

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MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr2(Ta1−x,Nbx)2O7 Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment

Integrated Ferroelectrics ◽

10.1080/10584580490892665 ◽

2004 ◽

Vol 65 (1) ◽

pp. 29-38 ◽

Cited By ~ 2

Author(s):

ICHIROU TAKAHASHI ◽

HIROYUKI SAKURAI ◽

TATSUFUMI ISOGAI ◽

KIYOSHI FUNAIWA ◽

MASAKI HIRAYAMA ◽

...

Keyword(s):

Dielectric Constant ◽

Vapor Deposition ◽

Physical Vapor Deposition ◽

Oxygen Radical ◽

Low Dielectric Constant ◽

Radical Treatment ◽

Low Dielectric ◽

Mfis Structure

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Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-655-cc3.5.1 ◽

2000 ◽

Vol 655 ◽

Cited By ~ 1

Author(s):

Masanori Okuyama ◽

Toshiyuki Nakaiso ◽

Minoru Noda

Keyword(s):

Thin Film ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Polarization Reversal ◽

Ambient Gas ◽

Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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Quantitative investigation of polarization-dependent photocurrent in ferroelectric thin films

Journal of Physics Condensed Matter ◽

10.1088/1361-648x/ac3f67 ◽

2021 ◽

Author(s):

Komalika Rani ◽

Sylvia Matzen ◽

Stéphane Gable ◽

Thomas Maroutian ◽

Guillaume Agnus ◽

...

Keyword(s):

Thin Films ◽

Photovoltaic Effect ◽

Quantitative Relationship ◽

Open Circuit ◽

Ferroelectric Thin Films ◽

Ferroelectric Polarization ◽

Ferroelectric Layer ◽

Ferroelectric Memories ◽

Careful Investigation

Abstract Ferroelectric thin films are investigated for their potential in photovoltaic (PV) applications, owing to their high open-circuit voltage and switchable photovoltaic effect. The direction of the ferroelectric polarization can control the sign of the photocurrent through the ferroelectric layer, theoretically allowing for 100 percent switchability of the photocurrent with the polarization, which is particularly interesting for photo-ferroelectric memories. However, the quantitative relationship between photocurrent and polarization remains little studied. In this work, a careful investigation of the polarization-dependent photocurrent of epitaxial Pb(Zr,Ti)O3 thin films has been carried out, and has provided a quantitative determination of the unswitchable part of ferroelectric polarization. These results represent a systematic approach to study and optimize the switchability of photocurrent, and more broadly to get important insights on the ferroelectric behavior in all types of ferroelectric layers in which pinned polarization is difficult to investigate.

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