Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga2O3 heterojunction by inserting thin SiC barrier layer

2016 ◽  
Vol 122 (12) ◽  
Author(s):  
Yuehua An ◽  
Yusong Zhi ◽  
Zhenping Wu ◽  
Wei Cui ◽  
Xiaolong Zhao ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

A simple, repeatable and highly stable self-powered solar-blind photoelectrochemical-type photodetector using amorphous Ga2O3 films grown on 3D carbon fiber paper

2021 ◽  
Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Gallium Oxide ◽  
Three Dimensional ◽  
Next Generation ◽  
Solar Blind ◽  
Carbon Fiber Paper ◽  
Deep Ultraviolet ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...

Fabrication of cerium-doped β-Ga_2O_3 epitaxial thin films and deep ultraviolet photodetectors

2018 ◽  
Vol 57 (3) ◽  
pp. 538 ◽  
Author(s):  
Wenhao Li ◽  
Xiaolong Zhao ◽  
Yusong Zhi ◽  
Xuhui Zhang ◽  
Zhengwei Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

Modulated Al2O3-Alloyed Ga2O3Materials and Deep Ultraviolet Photodetectors

2018 ◽  
Vol 30 (6) ◽  
pp. 549-552 ◽  
Author(s):  
Hsin-Ying Lee ◽  
Jyun-Ting Liu ◽  
Ching-Ting Lee
Keyword(s):  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

scholarly journals Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa2O4 Thin Films

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Si-Han Tsai ◽  
Sarbani Basu ◽  
Chiung-Yi Huang ◽  
Liang-Ching Hsu ◽  
Yan-Gu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors

2019 ◽  
Vol 7 (47) ◽  
pp. 14999-15006 ◽  
Author(s):  
Menglei Gao ◽  
Junhua Meng ◽  
Yanan Chen ◽  
Siyuan Ye ◽  
Ye Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Sapphire Substrates ◽  
Catalyst Free ◽  
Deep Ultraviolet ◽  
Free Growth ◽  
Ultraviolet Photodetectors

Catalyst-free growth of wafer-scale h-BN few-layers is realized on sapphire substrates by the combination of surface nitridation and N+ sputtering.

Titania:Graphdiyne nanocomposites for high-performance deep ultraviolet photodetectors based on mixed-phase MgZnO

2020 ◽  
Vol 825 ◽  
pp. 153882 ◽  
Author(s):  
Yan Li ◽  
Dan Kuang ◽  
Yanfei Gao ◽  
Jin Cheng ◽  
Xuyang Li ◽  
...  
Keyword(s):  
High Performance ◽  
Mixed Phase ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

scholarly journals Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

RSC Advances ◽  
2021 ◽  
Vol 11 (45) ◽  
pp. 28326-28331
Author(s):  
Yutong Wu ◽  
Shuanglong Feng ◽  
Miaomiao Zhang ◽  
Shuai Kang ◽  
Kun Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gallium Oxide ◽  
Wide Bandgap ◽  
Radiation Wavelength ◽  
Wide Bandgap Semiconductor ◽  
Ideal Candidate ◽  
Deep Ultraviolet ◽  
Nanowire Networks ◽  
Ultraviolet Photodetectors ◽  
Excellent Chemical

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (wavelength from 200 nm to 280 nm).

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