Highly transparent conductive ZnO films prepared by reactive RF sputtering with Zn/ZnO composite target

2021 ◽  
Vol 127 (9) ◽  
Author(s):  
B. L. Zhu ◽  
C. C. Wang ◽  
T. Xie ◽  
J. Wu ◽  
X. W. Shi
2001 ◽  
Vol 695 ◽  
Author(s):  
M.J. Daniels ◽  
D. King ◽  
J.S. Zabinski ◽  
Z.U. Rek ◽  
J.C. Bilello

ABSTRACTQuasicrystalline films were formed by RF sputtering from a powder composite target onto Inconel substrates, which produces a polymorphic nanoquasicrystalline grain structure, ~2.5 - 10 nm. Subsequent annealing at 500°C for 4 hours, at base pressures of below 5*10-5 Torr, and with Ar flow to 5 - 10 mT, fully develops the quasicrystalline structure with decagonal phase predominating, except near the termination surface. Analysis by XPS indicated extensive oxygen incorporation and limited aluminum enrichment at the termination surface. These results are correlated with structure and strain analysis via synchrotron grazing incidence x-ray scattering (GIXS). By varying the incident angle, hence the x-ray penetration depth, the evolution of an amorphous and crystalline crystalline secondary phases at the surface of the film has been detected. Residual strain analysis shows that this second phase induces a compressive residual strain of 0.10% as measured from the displacement of the major quasicrystalline peaks in the surface layers of the film.


1996 ◽  
Vol 11 (8) ◽  
pp. 2062-2070 ◽  
Author(s):  
Tatsuo Tsunoda ◽  
Masakazu Mukaida ◽  
Akio Watanabe ◽  
Yoji Imai

Direct β–FeSi2 film preparation from gaseous phase was examined using a radio-frequency (rf) sputtering deposition apparatus equipped with a composite target of iron and silicon. Films composed of only β–FeSi2 phase were formed at substrate temperatures above 573 K when the chemical composition of the film was very close to stoichiometric FeSi2. The β–FeSi2 films thus formed showed rather large positive Seebeck coefficient. When the chemical composition of the films were deviated to the Fe-rich side, ∈–FeSi phase was formed along with β–FeSi2. On the other hand, α–FeSi2 phase, which is stable above 1210 K in the equilibrium phase diagram, was formed at the substrate temperature as low as 723 K when the chemical composition was deviated to the Si-rich side. The formation of α–FeSi2 phase induced drastic changes in the morphology and thermoelectric properties of the films. The α–FeSi2 phase formed in the films was easily transformed to β–FeSi2 phase by a thermal treatment.


2004 ◽  
Vol 854 ◽  
Author(s):  
Sang Ryu ◽  
Youngman Kim

ABSTRACTZnO films were produced on the Si(100) and sapphire(0001) wafers by RF magnetron sputtering in terms of processing variables such as substrate temperature and RF power. The stress in films was obtained from the Stoney's formula using a laser scanning device. The stress levels in the films showed the range from ∼40MPa to ∼-1100MPa depending on processing variables.SEM was employed to characterize the microstructure of the films. As the substrate temperature increased, the film surface became rougher and the films showed coarser grains. The optical property of the films was studied by PL measurements. At the highest substrate temperature 800°C the film exhibited sharper UV peaks unlike other conditions.


2002 ◽  
Vol 750 ◽  
Author(s):  
M. J. Daniels ◽  
B. L. French ◽  
David King ◽  
J. C. Bilello

ABSTRACTQuasicrystalline precursor coatings were deposited on single crystal silicon and sapphire wafers by RF sputtering from an AlCuFe powder composite target. Synchrotron white beam radiography/topography and stress analysis were performed in situ on the wafers during heating to 495 or 585°C, and subsequent cooling. A plateau region of constant stress was present throughout most of the 1 hour anneals before a large tensile stress developed in the film during cooling due to coefficient of thermal expansion mismatch. Cracking was observed for films on both substrates at an average film stress of approximately 930 MPa. Distinct differences in the fracture behavior were observed for the two different substrates. X-ray diffraction performed on films after annealing suggested that texturing took place during the transition to a fully developed quasicrystalline structure.


2013 ◽  
Vol 1494 ◽  
pp. 91-97
Author(s):  
Tien-Chai Lin ◽  
Wen-Chang Huang ◽  
Chin-Hung Liu ◽  
Shang-Chou Chang

ABSTRACTThermal effects on the crystal structure, electrical and optical characteristics of the Al and F co-doped ZnO films (ZnO:AlF3) are discussed in the paper. The ZnO:AlF3 thin films are prepared by RF sputtering with a constant power (ZnO/AlF3=100W/75W) toward the ZnO and AlF3 targets. The substrate temperature varied from room temperature to 250 °C with a step of 50 °C during thin film deposition. The crystalline quality of the ZnO:AlF3 film improved as the substrate temperature increased, with a corresponding increase in grain size. The improvement of the film quality leads to a higher electron mobility, with electron mobility of 0.85 cm2/V-s for the film deposited at the substrate temperature of 250 °C. The doping effect of fluorine in ZnO, and hence carrier concentration, was reduced at high temperature due to the vaporization of fluorine. This led to a reduction of carrier concentration with increase of temperature from 25 to 200°C. The corresponding resistivity increased from 3.60×10−2 to 6.0×10−2 Ω-cm. While for a further increase in substrate temperature, the doping of Al to the ZnO film was increased and resulted in an increase in carrier concentration.


1997 ◽  
Vol 474 ◽  
Author(s):  
Hee-Bog Kang ◽  
Kiyoshi Nakamura ◽  
Kazuo Ishikawa

ABSTRACTEpitaxial ZnO films were grown on c-plane sapphire substrate at low temperature using the electron cyclotron resonance-assisted molecular beam epitaxy(ECR-assisted MBE) technique. In this method, Zn vapor provided by a Knudsen cell reacts with oxygen activated in an ECR source on the surface of sapphire substrate. The crystal structure, surface morphology and epitaxial relationship of the films were investigated. It was confirmed that the ECR-assisted MBE technique was capable of growing a high quality epitaxial ZnO films on c-plane sapphire substrates at low temperatures in comparison with CVD and RF sputtering. The FWHM of an x-ray rocking curve of the (0002) peak for a 0.33μ-thick ZnO film was as narrow as 0.58°. The epitaxial relationship between ZnO film and c-plane sapphire substrate was determined to be (0001)ZnO//(0001)Al2O3 with in-plane alignment of [1100]ZnO//[2110]Al2O3, which is equivalent to the 30° rotation of ZnO relative to sapphire in the c-plane.


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