The Residual Stress Effect on Microstructure and Optical Property of ZnO Films produced by RF Sputtering

2004 ◽  
Vol 854 ◽  
Author(s):  
Sang Ryu ◽  
Youngman Kim
Keyword(s):  
Optical Property ◽  
Substrate Temperature ◽  
Laser Scanning ◽  
Rf Sputtering ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Stress Effect ◽  
Processing Variables ◽  
Residual Stress Effect

ABSTRACTZnO films were produced on the Si(100) and sapphire(0001) wafers by RF magnetron sputtering in terms of processing variables such as substrate temperature and RF power. The stress in films was obtained from the Stoney's formula using a laser scanning device. The stress levels in the films showed the range from ∼40MPa to ∼-1100MPa depending on processing variables.SEM was employed to characterize the microstructure of the films. As the substrate temperature increased, the film surface became rougher and the films showed coarser grains. The optical property of the films was studied by PL measurements. At the highest substrate temperature 800°C the film exhibited sharper UV peaks unlike other conditions.

EFFECTS OF SUBSTRATE TEMPERATURE ON THE DOPING CHARACTERISTICS OF Li-W CO-DOPED ZnO FILMS

2014 ◽  
Vol 21 (01) ◽  
pp. 1450003 ◽  
Author(s):  
YUEHUI HU ◽  
YICHUAN CHEN ◽  
XIAOHUA ZHANG ◽  
DEFU MA ◽  
JUNXIANG WANG ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Zno Films ◽  
Glass Substrates ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Co Doped

Li - W co-doped ZnO (LWZO) thin films were deposited on quartz glass substrates by RF magnetron sputtering technology. The properties of LWZO films deposited with varied substrate temperatures were investigated. When the substrate temperature was lower than 120°C — according to X-ray diffraction (XRD) patterns, films keep hexagonal wurtzite structure with the (002) plane as preferred orientation — the optical transmittance was higher than 85%. When the substrate temperature was higher than 120°C, the results of XPS and XRD show that W 6+ will work as donors, and the (101) peak appeared; the optical transmittance decreased slightly but still higher than 82%. Scanning electron microscope (SEM) and its two-dimensional Fourier transform images showed that films had smooth surface and columnar particles structure when the substrate temperature was lower than 120°C. The film surface became rougher and flaky-shaped particles structure could be observed when the substrate temperature was higher than 120°C. In addition, the lowest electrical resistivity of sample was 3.6 × 10-3 Ω ⋅ cm which was obtained at substrate temperature 240°C.

The Preparation of the Highly Preferred Orientation of Wurtzite Structure Zinc Oxide Films

2014 ◽  
Vol 936 ◽  
pp. 287-292
Author(s):  
Lei Lei Lan ◽  
Dan Zhou ◽  
Guang Rui Gu ◽  
Bao Jia Wu ◽  
Lian Hua Tian
Keyword(s):  
Zinc Oxide ◽  
Substrate Temperature ◽  
Crystalline Structure ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Preferred Orientation ◽  
Wurtzite Structure ◽  
Zno Films ◽  
Zno Film ◽  
Si Substrates

Zinc oxide (ZnO) films are prepared on n-Si substrates by means of radio frequency (RF) magnetron sputtering method. The influences of substrate temperature on the crystal orientation and crystalline structure of ZnO films are investigated by X-ray diffraction (XRD) and Raman spectroscopy. The surface morphologies are studied by scanning electron microscope (SEM). It is indicated that ZnO films with wurtzite structure were successfully prepared. When the substrate temperature reduced to 100°C, the wurtzite structure with highly preferred orientation along the (002) plane of the ZnO film is prepared and the elliptical shape particles distributed uniformly on the ZnO film surface. The higher substrate temperature can offer more kinetic energy for mobility of particle on the surface to achieve other crystalline growth, resulting in the highly c-axis-oriented crystalline structure is destroyed.

The Preparation of the Highly Preferred Orientation of AlN Thin Films on ZnO Substrates

2013 ◽  
Vol 669 ◽  
pp. 181-184
Author(s):  
Nan Ding ◽  
Li Ming Xu ◽  
Bao Jia Wu ◽  
Guang Rui Gu
Keyword(s):  
Thin Films ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Promising Candidate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Crystallite Structure

Zinc oxide (ZnO) films were prepared on Si substrates and then aluminum nitride (AlN) films were deposited on ZnO films by radio frequency (RF) magnetron sputtering. The crystal orientation, crystallite structure and surface morphology of AlN/ZnO films were characterized by X-ray diffraction (XRD), Raman spectrum and scanning electron microscopy (SEM). It was indicated that the AlN films were closely deposited on the ZnO film and had good crystallinity. Moreover, about 1μm-sized crystal particles with high c-axial orientation distributed uniformly on the AlN/ZnO film surface. It was indicated that ZnO could be a promising candidate as buffer layer for preparation of AlN thin films.

Crystallographic Texture of MgO and its Effect on the Growth of BaTiO3 Thin Films by RF Sputtering

2007 ◽  
Vol 546-549 ◽  
pp. 2175-2178
Author(s):  
Liang Qiao ◽  
Xiao Fang Bi
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Crystallographic Texture ◽  
Great Influence ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
High Substrate Temperature ◽  
Argon Pressure ◽  
Structure And Microstructure ◽  
Deposition Conditions

In this work, MgO thin films were prepared by rf magnetron sputtering technique on two different substrates of Si (100) wafers and amorphous glasses. The influence of different deposition conditions such as substrate temperature, Ar pressure, film thicknesses on the crystal structure of MgO thin films were studied. BaTiO3 ferroelectric thin films were subsequently deposited on the MgO films. The XRD results showed that the orientation of MgO films was dependent greatly on the substrate temperature. A highly (100) oriented MgO thin films were obtained at the temperature of 800°C. The crystallographic texture has been deteriorated rapidly as the argon pressure decreased to 1.0 Pa. It has been also found that the film thickness has a great influence on the film orientation. High substrate temperature, high argon pressure and a certain thickness appear to be favorable for formation of a good texture for the MgO films. The structure and microstructure of the BaTiO3 films were various both with deposition conditions and with the crystallographic texture of the MgO. A highly (001) oriented ferroelectric BTO film was obtained on the MgO films with an optimized deposition conditions.

Indium Doped ZnO Films Prepared by RF Magnetron Sputtering: Effect of Substrate Temperature on the Strain-Induced Band Gap

2012 ◽  
Vol 12 (3) ◽  
pp. 2503-2508 ◽  
Author(s):  
Georgi P. Daniel ◽  
David Devraj Kumar ◽  
V. B. Justinvictor ◽  
Prabitha B. Nair ◽  
K. Joy ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering

2007 ◽  
Vol 515 (24) ◽  
pp. 8785-8788 ◽  
Author(s):  
Jinzhong Wang ◽  
Vincent Sallet ◽  
François Jomard ◽  
Ana M. Botelho do Rego ◽  
Elangovan Elamurugu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Influence Of Substrate

Influence of Sputtering Power and Substrate Temperature on Properties of Al2O3-Doped ZnO Films

2012 ◽  
Vol 557-559 ◽  
pp. 1945-1949
Author(s):  
Ge Yu ◽  
Ya Liu ◽  
Dan Hong Hong ◽  
Dong Lin Li ◽  
Jian Xin Zang
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Atomic Force ◽  
Argon Flow ◽  
Sputtering Power ◽  
Diffraction Peaks ◽  
Substrate Temperatures

Aluminum oxide-doped zinc oxide (AZO) films were deposited by radio frequency (RF) magnetron sputtering at various substrate temperatures and sputtering powers with pure argon flow. Their electrical and optical properties and microstructures were investigated by X-ray diffractometer (XRD), atomic force microscope (AFM), ultraviolet-visible spectrophotometer, four-probe tester. The investigation indicates that the electrical and optical properties and microstructures of the AZO films are remarkably influenced by substrate temperature and sputtering power. With the sputtering power increasing from 60W to 180W, the diffraction peaks rise significantly, the resistivity decreases quickly and the visible transmission is all quite high. When the substrate temperature increases from 25°C to 400°C, the diffraction peaks rise first and lower then both quickly, the resistivity decreases first sharply and then very slowly, and the visible transmission is also high. The films deposited at the substrate temperature 300°C with the sputtering power 180W have low resistivity 1.2×10–3 Ω•cm and high transmittance 92% at the same time.

Substrate Temperature Effects of the ZnO:AlF3Transparent Conductive Oxide

2013 ◽  
Vol 1494 ◽  
pp. 91-97
Author(s):  
Tien-Chai Lin ◽  
Wen-Chang Huang ◽  
Chin-Hung Liu ◽  
Shang-Chou Chang
Keyword(s):  
Substrate Temperature ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Thermal Effects ◽  
Rf Sputtering ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Film

ABSTRACTThermal effects on the crystal structure, electrical and optical characteristics of the Al and F co-doped ZnO films (ZnO:AlF3) are discussed in the paper. The ZnO:AlF3 thin films are prepared by RF sputtering with a constant power (ZnO/AlF3=100W/75W) toward the ZnO and AlF3 targets. The substrate temperature varied from room temperature to 250 °C with a step of 50 °C during thin film deposition. The crystalline quality of the ZnO:AlF3 film improved as the substrate temperature increased, with a corresponding increase in grain size. The improvement of the film quality leads to a higher electron mobility, with electron mobility of 0.85 cm2/V-s for the film deposited at the substrate temperature of 250 °C. The doping effect of fluorine in ZnO, and hence carrier concentration, was reduced at high temperature due to the vaporization of fluorine. This led to a reduction of carrier concentration with increase of temperature from 25 to 200°C. The corresponding resistivity increased from 3.60×10−2 to 6.0×10−2 Ω-cm. While for a further increase in substrate temperature, the doping of Al to the ZnO film was increased and resulted in an increase in carrier concentration.

Preparation and Characterization of Piezoelectric Films of ZnO and AlN by RF Sputtering for RF MEMS Applications

2012 ◽  
Vol 500 ◽  
pp. 84-89 ◽  
Author(s):  
Sudhir Chandra ◽  
Atul Vir Singh
Keyword(s):  
Rf Mems ◽  
Potassium Hydroxide Solution ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Zno Films ◽  
Mems Devices ◽  
Potential Applications ◽  
Piezoelectric Films

In present work, we report preparation and characterization of piezoelectric films of zinc oxide (ZnO) and aluminum nitride (AlN) by RF magnetron sputtering using respective ceramic targets. The effect of ambient gas, substrate temperature, RF power and sputtering pressure has been studied to get highly c-axis oriented films for potential applications in micro-electromechanical systems. The films were characterized by X-ray diffraction technique to identify the crystallographic orientation. It was observed that the film deposited in pure Argon (Ar) ambient were amorphous or weekly crystallized with no preferred (002) orientation. On the other hand, the films prepared in Ar-O2 for ZnO were highly c-axis oriented. Similarly AlN films were observed to be oriented along c-axis perpendicular to substrate only when deposited in mixture of Ar-N2. To demonstrate the application of piezoelectric properties, an FBAR device (Film Bulk Acoustic Resonator) using ZnO thin film was fabricated. ZnO films are very sensitive to the chemicals used in the micro-electro-mechanical systems (MEMS) fabrication processes which include acids, bases and etchants of different material layers (e.g. SiO2, chromium, gold etc.). A specially designed mechanical jig was used for physically protecting the film during Si anisotropic etching process in potassium hydroxide solution. The potential applications of these films in various RF MEMS devices have been discussed.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

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