Substrate Temperature Effects of the ZnO:AlF3Transparent Conductive Oxide

ABSTRACTThermal effects on the crystal structure, electrical and optical characteristics of the Al and F co-doped ZnO films (ZnO:AlF3) are discussed in the paper. The ZnO:AlF3 thin films are prepared by RF sputtering with a constant power (ZnO/AlF3=100W/75W) toward the ZnO and AlF3 targets. The substrate temperature varied from room temperature to 250 °C with a step of 50 °C during thin film deposition. The crystalline quality of the ZnO:AlF3 film improved as the substrate temperature increased, with a corresponding increase in grain size. The improvement of the film quality leads to a higher electron mobility, with electron mobility of 0.85 cm2/V-s for the film deposited at the substrate temperature of 250 °C. The doping effect of fluorine in ZnO, and hence carrier concentration, was reduced at high temperature due to the vaporization of fluorine. This led to a reduction of carrier concentration with increase of temperature from 25 to 200°C. The corresponding resistivity increased from 3.60×10−2 to 6.0×10−2 Ω-cm. While for a further increase in substrate temperature, the doping of Al to the ZnO film was increased and resulted in an increase in carrier concentration.

Download Full-text

Leakage Current and Dielectric Properties of Ba0.5Sr0.5TiO3 Films Deposited by RF Sputtering at Low Substrate Temperature

MRS Proceedings ◽

10.1557/proc-768-g3.6 ◽

2003 ◽

Vol 768 ◽

Author(s):

Nicholas Cramer ◽

Thottam S. Kalkur ◽

Elliot Philofsky ◽

Lee Kammerdiner

Keyword(s):

Dielectric Properties ◽

Substrate Temperature ◽

Leakage Current ◽

Rf Sputtering ◽

Chemical Vapor ◽

Thin Film Deposition ◽

Temperature Limit ◽

Film Deposition ◽

Processing Temperature ◽

Device Applications

AbstractMost studies of Ba0.5Sr0.5TiO3 (BST) thin film deposition have focused on chemical vapor deposition or spin-on techniques. Both these techniques require high substrate temperature (greater than 600 °C), either during the deposition or during an anneal after deposition. A few groups have reported on sputtered films, but most of these studies also used high-temperature processes. While such temperatures are compatible with poly-Si plug DRAM and related technologies, they are far above the limits for technologies that require the deposition of non-refractory metals before the deposition of the ceramic film. For example, the use of Al metalization before the deposition of BST would limit the BST processing temperature to about 450 °C. A process compatible with such a temperature limit is reported. Such a process makes fabrication of high quality BST thin films difficult, primarily due to the need for oxidation and grain growth in the ceramic. The leakage current and dielectric properties of BST films deposited in such a process are reported and are shown to be sufficient for practical device applications.

Download Full-text

Effect of the substrate temperature during gold-copper alloys thin film deposition by magnetron co-sputtering on the dealloying process

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2019.125220 ◽

2020 ◽

Vol 383 ◽

pp. 125220 ◽

Cited By ~ 2

Author(s):

Adrien Chauvin ◽

Lukas Horak ◽

Elen Duverger-Nédellec ◽

Milan Dopita ◽

Pierre-Yves Tessier ◽

...

Keyword(s):

Thin Film ◽

Substrate Temperature ◽

Copper Alloys ◽

Thin Film Deposition ◽

Film Deposition

Download Full-text

Transparent ZnO Thin-Film Deposition by Spray Pyrolysis for High-Performance Metal-Oxide Field-Effect Transistors

Materials ◽

10.3390/ma12203423 ◽

2019 ◽

Vol 12 (20) ◽

pp. 3423 ◽

Cited By ~ 7

Author(s):

Junhee Cho ◽

Seongkwon Hwang ◽

Doo-Hyun Ko ◽

Seungjun Chung

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Spray Pyrolysis ◽

Field Effect ◽

Field Effect Transistors ◽

Spray Pyrolysis Technique ◽

Thin Film Deposition ◽

Film Deposition ◽

Zno Films ◽

Process Conditions

Solution-based metal oxide semiconductors (MOSs) have emerged, with their potential for low-cost and low-temperature processability preserving their intrinsic properties of high optical transparency and high carrier mobility. In particular, MOS field-effect transistors (FETs) using the spray pyrolysis technique have drawn huge attention with the electrical performances compatible with those of vacuum-based FETs. However, further intensive investigations are still desirable, associated with the processing optimization and operational instabilities when compared to other methodologies for depositing thin-film semiconductors. Here, we demonstrate high-performing transparent ZnO FETs using the spray pyrolysis technique, exhibiting a field-effect mobility of ~14.7 cm2 V−1 s−1, an on/off ratio of ~109, and an SS of ~0.49 V/decade. We examine the optical and electrical characteristics of the prepared ZnO films formed by spray pyrolysis via various analysis techniques. The influence of spray process conditions was also studied for realizing high quality ZnO films. Furthermore, we measure and analyze time dependence of the threshold voltage (Vth) shifts and their recovery behaviors under prolonged positive and negative gate bias, which were expected to be attributed to defect creation and charge trapping at or near the interface between channel and insulator, respectively.

Download Full-text

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.418-420.293 ◽

2011 ◽

Vol 418-420 ◽

pp. 293-296

Author(s):

Qiu Yun Fu ◽

Peng Cheng Yi ◽

Dong Xiang Zhou ◽

Wei Luo ◽

Jian Feng Deng

Keyword(s):

Magnetron Sputtering ◽

Deposition Time ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

Zno Film ◽

Nano Zno ◽

Axis Orientation ◽

X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

Download Full-text

Stability Studies on Optical and Structure Properties of Zinc Oxide Thin Films Exposed to Different Environment

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.549 ◽

2013 ◽

Vol 667 ◽

pp. 549-552

Author(s):

A.S.M. Rodzi ◽

Mohamad Hafiz Mamat ◽

M.N. Berhan ◽

Mohamad Rusop Mahmood

Keyword(s):

Thin Film ◽

Thin Films ◽

Zinc Oxide ◽

Absorption Coefficient ◽

Near Infrared ◽

Thin Film Deposition ◽

Film Deposition ◽

Zno Films ◽

Zno Thin Film ◽

Oxide Thin Films

The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.

Download Full-text

The Residual Stress Effect on Microstructure and Optical Property of ZnO Films produced by RF Sputtering

MRS Proceedings ◽

10.1557/proc-854-u8.18 ◽

2004 ◽

Vol 854 ◽

Author(s):

Sang Ryu ◽

Youngman Kim

Keyword(s):

Optical Property ◽

Substrate Temperature ◽

Laser Scanning ◽

Rf Sputtering ◽

Film Surface ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Stress Effect ◽

Processing Variables ◽

Residual Stress Effect

ABSTRACTZnO films were produced on the Si(100) and sapphire(0001) wafers by RF magnetron sputtering in terms of processing variables such as substrate temperature and RF power. The stress in films was obtained from the Stoney's formula using a laser scanning device. The stress levels in the films showed the range from ∼40MPa to ∼-1100MPa depending on processing variables.SEM was employed to characterize the microstructure of the films. As the substrate temperature increased, the film surface became rougher and the films showed coarser grains. The optical property of the films was studied by PL measurements. At the highest substrate temperature 800°C the film exhibited sharper UV peaks unlike other conditions.

Download Full-text

Effect of substrate temperature on SnS thin film deposition by nebulization technique

International Conference on Advanced Nanomaterials & Emerging Engineering Technologies ◽

10.1109/icanmeet.2013.6609346 ◽

2013 ◽

Author(s):

B. Karuppasamy ◽

L. Amalraj ◽

V. Gayathri

Keyword(s):

Thin Film ◽

Substrate Temperature ◽

Thin Film Deposition ◽

Film Deposition

Download Full-text

Growth of ZnO Thin Films on Sapphire Substrates by ECR-Assisted MBE

MRS Proceedings ◽

10.1557/proc-474-395 ◽

1997 ◽

Vol 474 ◽

Author(s):

Hee-Bog Kang ◽

Kiyoshi Nakamura ◽

Kazuo Ishikawa

Keyword(s):

Sapphire Substrate ◽

Electron Cyclotron Resonance ◽

Rf Sputtering ◽

Zno Films ◽

Zno Film ◽

Epitaxial Relationship ◽

Rocking Curve ◽

Sapphire Substrates ◽

Relationship Of ◽

Ecr Source

ABSTRACTEpitaxial ZnO films were grown on c-plane sapphire substrate at low temperature using the electron cyclotron resonance-assisted molecular beam epitaxy(ECR-assisted MBE) technique. In this method, Zn vapor provided by a Knudsen cell reacts with oxygen activated in an ECR source on the surface of sapphire substrate. The crystal structure, surface morphology and epitaxial relationship of the films were investigated. It was confirmed that the ECR-assisted MBE technique was capable of growing a high quality epitaxial ZnO films on c-plane sapphire substrates at low temperatures in comparison with CVD and RF sputtering. The FWHM of an x-ray rocking curve of the (0002) peak for a 0.33μ-thick ZnO film was as narrow as 0.58°. The epitaxial relationship between ZnO film and c-plane sapphire substrate was determined to be (0001)ZnO//(0001)Al2O3 with in-plane alignment of [1100]ZnO//[2110]Al2O3, which is equivalent to the 30° rotation of ZnO relative to sapphire in the c-plane.

Download Full-text