Electron trapping center and SnO2-doping mechanism of indium tin oxide

2000 ◽  
Vol 71 (6) ◽  
pp. 609-614 ◽  
Author(s):  
T. Omata ◽  
H. Fujiwara ◽  
S. Otsuka-Yao-Matsuo ◽  
N. Ono
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electron Trapping ◽  
Trapping Center ◽  
Doping Mechanism ◽  
Electron Trapping Center

Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy

1986 ◽  
Vol 59 (10) ◽  
pp. 3489-3494 ◽  
Author(s):  
S. Nojima ◽  
H. Tanaka ◽  
H. Asahi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Trapping ◽  
Trapping Center ◽  
Si Doped ◽  
Electron Trapping Center

Evidence of Electron Trapping Center at Pentacene/SiO2 Interface

2007 ◽  
Author(s):  
Chang Bum Park ◽  
Takamichi Yokoyama ◽  
Tomonori Nishimura ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Electron Trapping ◽  
Trapping Center ◽  
Electron Trapping Center

Influence of Preferred Orientation in Indium Tin Oxide.

1992 ◽  
Vol 280 ◽  
Author(s):  
H. Taniguchi ◽  
T. Ushiro ◽  
Y. Okamoto ◽  
Y. Akagi ◽  
M. Koba
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Crystal Orientation ◽  
Carrier Density ◽  
Free Carrier ◽  
Electrical And Optical Properties ◽  
Sn Doping ◽  
Free Carrier Density ◽  
Doping Mechanism ◽  
Moss Effect

ABSTRACTWe investigated the electrical and optical properties, the chemical composition, the surface morphology and the crystallinity of sputtered Sn-doped In2O3 films deposited on different substrate positions. Both the electric conductivity and the optical transparency are related to the free carrier density and moreover the preferred crystal orientation. The former relation is attributed to the Burstein-Moss effect and the latter suggests the Sn doping mechanism.

Energy and spatial distribution of an electron trapping center in the MOS insulator

1977 ◽  
Vol 48 (2) ◽  
pp. 739-749 ◽  
Author(s):  
V. J. Kapoor ◽  
F. J. Feigl ◽  
S. R. Butler
Keyword(s):  
Spatial Distribution ◽  
Electron Trapping ◽  
Trapping Center ◽  
Electron Trapping Center

Fan-shaped mid-infrared chiral metamaterials based on indium tin oxide and their circular dichroism

2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Mid Infrared ◽  
Chiral Metamaterials ◽  
Circular Dichroïsm

Indium tin oxide/GaAs photodiodes for millimetric-wave applications

1986 ◽  
Vol 22 (23) ◽  
pp. 1266 ◽  
Author(s):  
D.G. Parker ◽  
P.G. Say
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Millimetric Wave

Indium–tin oxide film electrode as catalytic amperometric sensor for hydrogen peroxide

The Analyst ◽  
1995 ◽  
Vol 120 (10) ◽  
pp. 2579-2583 ◽  
Author(s):  
Xiaohua Cai ◽  
Božidar Ogorevc ◽  
Gabrijela Tavčar ◽  
Joseph Wang
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Amperometric Sensor ◽  
Film Electrode
Sign in / Sign up

Export Citation Format

Share Document