Pulsed-laser deposition of Ta-doped PZT ferroelectric films for memory applications using conductive oxide La 0.25 Sr 0.75 CoO 3 and SrRuO 3 electrodes

1999 ◽  
Vol 69 (7) ◽  
pp. S659-S661 ◽  
Author(s):  
Z.G. Liu ◽  
J. Yin ◽  
Z.C. Wu
1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  

2000 ◽  
Vol 375 (1-2) ◽  
pp. 200-204 ◽  
Author(s):  
Xinhua Zhu ◽  
Yiming Liu ◽  
Zhenghua An ◽  
Tao Zhu ◽  
Zhuangchun Wu ◽  
...  

2012 ◽  
Vol 260 ◽  
pp. 42-46 ◽  
Author(s):  
G. Socol ◽  
M. Socol ◽  
N. Stefan ◽  
E. Axente ◽  
G. Popescu-Pelin ◽  
...  

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Werner ◽  
D. Thomas ◽  
S.K. Streiffer ◽  
O. Auciello ◽  
Angus I. Kingon

ABSTRACTFerroelectric SrBi2Ta2U9 (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization – electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2Pr = 8-13 µC/cm2. Capacitors showed negligible fatigue up to 1010 switching cycles.


2007 ◽  
Vol 90 (5) ◽  
pp. 052110 ◽  
Author(s):  
Wenfeng Xiang ◽  
Rui Dong ◽  
Dongsoo Lee ◽  
Seokjoon Oh ◽  
Dongjun Seong ◽  
...  

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