Investigation of Layer Structure of the Takamatsuzuka Mural Paintings by Terahertz Imaging Technique

2017 ◽  
Vol 38 (4) ◽  
pp. 380-389 ◽  
Author(s):  
M. Inuzuka ◽  
Y. Kouzuma ◽  
N. Sugioka ◽  
K. Fukunaga ◽  
T. Tateishi
Keyword(s):  
Imaging Technique ◽  
Layer Structure ◽  
Terahertz Imaging ◽  
Mural Paintings

scholarly journals Investigation of Cultural Objects by Terahertz Imaging Technique

2017 ◽  
Vol 71 (3) ◽  
pp. 235-239
Author(s):  
Masahide Inuzuka ◽  
Toshihiko Takishita ◽  
Hideki Kobayashi ◽  
Yousei Kouzuma ◽  
Nahoko Sugioka ◽  
...  
Keyword(s):  
Imaging Technique ◽  
Terahertz Imaging ◽  
Cultural Objects

Terahertz imaging technique and application in large scale integrated circuit failure inspection

2010 ◽  
Author(s):  
Zhi-gang Di ◽  
Jian-quan Yao ◽  
Chun-rong Jia ◽  
De-gang Xu ◽  
Pi-bin Bing ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Large Scale ◽  
Imaging Technique ◽  
Terahertz Imaging

Terahertz imaging for non-destructive evaluation of mural paintings

2008 ◽  
Vol 281 (4) ◽  
pp. 527-532 ◽  
Author(s):  
J.B. Jackson ◽  
M. Mourou ◽  
J.F. Whitaker ◽  
I.N. Duling ◽  
S.L. Williamson ◽  
...  
Keyword(s):  
Terahertz Imaging ◽  
Mural Paintings ◽  
Non Destructive Evaluation ◽  
Non Destructive

scholarly journals Terahertz imaging technique for cancer diagnostics using frequency conversion by gold nano-objects

2017 ◽  
Vol 509 (1) ◽  
pp. 158-166 ◽  
Author(s):  
K. A. Moldosanov ◽  
A. V. Postnikov ◽  
V. M. Lelevkin ◽  
N. J. Kairyev
Keyword(s):  
Frequency Conversion ◽  
Imaging Technique ◽  
Terahertz Imaging ◽  
Cancer Diagnostics

Characterization of Dislocations in GaAs Grown on Si and Ge

1987 ◽  
Vol 91 ◽  
Author(s):  
N.-H. Cho ◽  
S. Mckernan ◽  
C. B. Carter ◽  
B. C. De Cooman ◽  
K. Wagner
Keyword(s):  
Lattice Mismatch ◽  
Imaging Technique ◽  
Layer Structure ◽  
Misfit Dislocations ◽  
Structure Model ◽  
Polar Material ◽  
Weak Beam ◽  
Transmission Electron ◽  
Prepared Layer

ABSTRACTDislocations are produced at the interface between epilayers and the substrate when there is a lattice mismatch. When GaAs is grown on Ge substrates, these dislocations can propagate into the epilayers. They can then interact with one another or with antiphase boundaries which are generated when the polar-material is grown on a non-polar materials.The interactions between these defects have been investigated using the weak-beam imaging technique of transmission electron microscopy. Possible interactions between the misfit dislocations and heterojunctions were examined in a specially prepared layer structure model of GaAs-AlxGal−xAs.

Sign in / Sign up

Export Citation Format

Share Document