Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers

2020 ◽  
Vol 55 (21) ◽  
pp. 8992-9002 ◽  
Author(s):  
Lifei Zhang ◽  
Tongqing Wang ◽  
Xinchun Lu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Copper Interconnects ◽  
Potassium Persulfate ◽  
Barrier Layers

Potassium persulfate as an effective oxidizer for chemical mechanical polishing of GCr15 bearing steel

2021 ◽  
Vol 51 (5) ◽  
pp. 803-814
Author(s):  
Ting Zhao ◽  
Liang Jiang ◽  
Jinwei Liu ◽  
Hanqiang Wu ◽  
Na Qin ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Bearing Steel ◽  
Mechanical Polishing ◽  
Potassium Persulfate ◽  
Gcr15 Bearing Steel

Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing Processes

2001 ◽  
Vol 671 ◽  
Author(s):  
Tamba Tugbawa ◽  
Tae Park ◽  
Brian Lee ◽  
Duane Boning
Keyword(s):  
Experimental Data ◽  
Contact Mechanics ◽  
Long Range ◽  
Chemical Mechanical Polishing ◽  
Region Of Interest ◽  
Mechanical Polishing ◽  
Copper Interconnects ◽  
Pattern Dependencies ◽  
Multi Level ◽  
Polishing Pressure

ABSTRACTWepropose an integratedcontact mechanics and density-step-heightmodel of pattern dependencies for the chemical-mechanical polishing (CMP) of multi-level copper interconnects, and show preliminary comparisons with experimental data for the overburden copper removal stage. The model uses contact mechanics to correctly apportion polishing pressure on all sections of an envelop function that reflects the long-range thickness differences on the chip, or region of interest. With the pressure over the entire envelop known, the density-step-height part of the model is then used to compute the amount of material removed in the local “up-areas” and “down-areas”. ThismodelshowspromiseinaccuratelyandefficientlypredictingpostCMPcopperanddielectric thicknesses across an entire chip.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

scholarly journals Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

2021 ◽  
Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Ordered Mesoporous ◽  
Mesoporous Structures
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