Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing Processes

2001 ◽  
Vol 671 ◽  
Author(s):  
Tamba Tugbawa ◽  
Tae Park ◽  
Brian Lee ◽  
Duane Boning
Keyword(s):  
Experimental Data ◽  
Contact Mechanics ◽  
Long Range ◽  
Chemical Mechanical Polishing ◽  
Region Of Interest ◽  
Mechanical Polishing ◽  
Copper Interconnects ◽  
Pattern Dependencies ◽  
Multi Level ◽  
Polishing Pressure

ABSTRACTWepropose an integratedcontact mechanics and density-step-heightmodel of pattern dependencies for the chemical-mechanical polishing (CMP) of multi-level copper interconnects, and show preliminary comparisons with experimental data for the overburden copper removal stage. The model uses contact mechanics to correctly apportion polishing pressure on all sections of an envelop function that reflects the long-range thickness differences on the chip, or region of interest. With the pressure over the entire envelop known, the density-step-height part of the model is then used to compute the amount of material removed in the local “up-areas” and “down-areas”. ThismodelshowspromiseinaccuratelyandefficientlypredictingpostCMPcopperanddielectric thicknesses across an entire chip.

Study on Chemical Mechanical Polishing Technology of Copper

2008 ◽  
Vol 373-374 ◽  
pp. 820-823
Author(s):  
Sheng Li Wang ◽  
Y.J. Yuan ◽  
Yu Ling Liu ◽  
X.H. Niu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Alkali Concentration ◽  
Copper Films ◽  
Optimum Conditions ◽  
Slurry Flow Rate ◽  
Polishing Pressure ◽  
Oxidizer Concentration

Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

Analysis of the Main Parameters in the Chemical Mechanical Polishing Process

2011 ◽  
Vol 317-319 ◽  
pp. 29-33 ◽  
Author(s):  
Xiang Dong Yang ◽  
Xin Wei ◽  
Xiao Zhu Xie ◽  
Zhuo Chen ◽  
Wei Bo Zou
Keyword(s):  
Surface Quality ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Rotation Speed ◽  
Removal Rate ◽  
Surface Damage ◽  
Mechanical Polishing ◽  
Technological Parameters ◽  
Polishing Pressure

This paper studies the chemical mechanical polishing (CMP) of the wafer's material such as stainless steel, monocrystalline silicon etc, and analyzes how the technological parameters’ impact on the final wafer’s surface material removal rate, surface quality and surface damage like the polishing pad’s speed and the wafer speed, polishing pressure and polishing time.The results show that: when the difference between the polishing pad's rotation speed and the wafer's rotation speed is small and their directions are the same , then the material removal rate of the wafer is larger.when the polishing pressure is selected between 5 to 6.5 kPa, the wafer surface's damage is smaller.The polishing time also play a very important role and affect the surface quality and surface damage of the wafer after polishing.

Consumables for the Chemical Mechanical Polishing (Cmp) of Dielectrics and Conductors

1994 ◽  
Vol 337 ◽  
Author(s):  
Rahul Jairath ◽  
Mukesh Desai ◽  
Matt Stell ◽  
Robert Tolles ◽  
Debra Scherber-Brewer
Keyword(s):  
Integrated Circuits ◽  
Chemical Mechanical Polishing ◽  
Large Scale ◽  
Dielectric Material ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Polished Surface ◽  
Polishing Pad ◽  
Dispersing Agent ◽  
Polishing Pressure

ABSTRACTChemical mechanical polishing (CMP) is rapidly becoming the process of choice for planarizing dielectrics in very large scale integrated circuits. In addition, it is being used at an increasing rate in the removal of metals in order to define conducting levels. In the case of dielectric CMP, planarization ability is dictated by the mechanical aspects of polishing such as pad rigidity, polishing pressure and speed of the polishing platen, while inherent removal rate of the dielectric material is generally a function of the polishing chemistry. Polishing rate of both, dielectric and metallic films can be significantly increased by changing the nature of the dispersed abrasive in the slurry and that of the dispersing agent. However, such changes have profound implications to the surface quality, planarity, and cleaning of the polished surface. In addition, the polishing pad plays an important role in manufacturability of metal CMP processes. This work reviews the chemistry of polishing slurries containing silica, ceria and alumina abrasives for dielectric and metal CMP. Also, the contribution of the polishing pad to CMP processes is explained. The need for balancing the chemical and mechanical aspects of polishing in order to achieve overall planarization and pattern definition is demonstrated.

Modeling of Back Pressure Distribution on the Wafer Loaded in a Multi-Zone Carrier in Chemical Mechanical Polishing

2006 ◽  
Vol 532-533 ◽  
pp. 233-236 ◽  
Author(s):  
Yu Hui Sun ◽  
Ren Ke Kang ◽  
Dong Ming Guo
Keyword(s):  
Pressure Distribution ◽  
Chemical Mechanical Polishing ◽  
Plate Theory ◽  
Removal Rate ◽  
Back Pressure ◽  
Mechanical Polishing ◽  
Factors Affecting ◽  
Uniform Distributions ◽  
Polishing Pressure ◽  
Selection Of

The within-wafer non-uniformity (WIWNU) of material removal rate in chemical mechanical polishing (CMP) is important for IC manufacture. The non-uniform distributions of polishing pressure and the relative speed between the wafer and the polishing pad are main factors affecting the WIWNU. In this paper，based on the contact mechanics and the elastic plate theory, a compensate pressure computing model is presented, in which the effects of kinematic parameters are taken into acount. By modelling and calculating, the desired compensate back pressure distribution is obtained. In the last section the design of a schematic carrier with multi-zone, in which the compensate back pressure can be applied, is presented. The model and the design can be used for providing theoretical guide to the development of CMP equipments and selection of the kinematic variables in CMP process.

A Multi-Physics Particle-Augmented Mixed Lubrication Modeling Approach for Studying CMP

2007 ◽  
Author(s):  
Elon Terrell ◽  
C. Fred Higgs
Keyword(s):  
Fluid Mechanics ◽  
Contact Mechanics ◽  
Chemical Mechanical Polishing ◽  
Particle Dynamics ◽  
Mixed Lubrication ◽  
Mechanical Polishing ◽  
Predictive Tool ◽  
Modeling Approach

An integrated multi-physics approach was taken in order to model the complex physics behind chemical-mechanical polishing (CMP). This model, known as the particle-augmented mixed lubrication model, accounts for the important mechanical interactions in CMP—namely, fluid mechanics, particle dynamics, contact mechanics, and wear—and incorporates all of them into an integrated algorithm. The compiled model is then simulated over a series of time steps in order to form a predictive tool for CMP.

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