CVD Of Copper From A Cu+1 Precursor And Water Vapor And Formation Of TiN- Encapsulated Submicron Copper Interconnects By Chemical-Mechanical Polishing

ABSTRACTWepropose an integratedcontact mechanics and density-step-heightmodel of pattern dependencies for the chemical-mechanical polishing (CMP) of multi-level copper interconnects, and show preliminary comparisons with experimental data for the overburden copper removal stage. The model uses contact mechanics to correctly apportion polishing pressure on all sections of an envelop function that reflects the long-range thickness differences on the chip, or region of interest. With the pressure over the entire envelop known, the density-step-height part of the model is then used to compute the amount of material removed in the local “up-areas” and “down-areas”. ThismodelshowspromiseinaccuratelyandefficientlypredictingpostCMPcopperanddielectric thicknesses across an entire chip.

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Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers

Journal of Materials Science ◽

10.1007/s10853-020-04579-6 ◽

2020 ◽

Vol 55 (21) ◽

pp. 8992-9002 ◽

Cited By ~ 1

Author(s):

Lifei Zhang ◽

Tongqing Wang ◽

Xinchun Lu

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Copper Interconnects ◽

Potassium Persulfate ◽

Barrier Layers

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Modeling of chemical mechanical polishing at multiple scales

10.31274/rtd-180813-13199 ◽

2002 ◽

Cited By ~ 1

Author(s):

Guanghui Fu

Keyword(s):

Chemical Mechanical Polishing ◽

Multiple Scales ◽

Mechanical Polishing

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Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

Applied Sciences ◽

10.3390/app11104358 ◽

2021 ◽

Vol 11 (10) ◽

pp. 4358

Author(s):

Hanchul Cho ◽

Taekyung Lee ◽

Doyeon Kim ◽

Hyoungjae Kim

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Shape Error ◽

Profile Shape ◽

Conditioning Process ◽

Polishing Pad ◽

Simulation Based ◽

Diamond Conditioner ◽

Pad Conditioning ◽

Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

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Effect of temperature on copper damascene chemical mechanical polishing process

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2825143 ◽

2008 ◽

Vol 26 (1) ◽

pp. 141 ◽

Cited By ~ 13

Author(s):

Veera Raghava Kakireddy ◽

Subrahmanya Mudhivarthi ◽

Ashok Kumar

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Effect Of Temperature ◽

Polishing Process ◽

Chemical Mechanical Polishing Process

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Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

Science China Materials ◽

10.1007/s40843-021-1680-2 ◽

2021 ◽

Author(s):

Peili Gao ◽

Tingting Liu ◽

Zhenyu Zhang ◽

Fanning Meng ◽

Run-Ping Ye ◽

...

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Ordered Mesoporous ◽

Mesoporous Structures

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Mechanism Analysis of Chemical Mechanical Polishing of 4H-SiC Wafer

2020 China Semiconductor Technology International Conference (CSTIC) ◽

10.1109/cstic49141.2020.9282432 ◽

2020 ◽

Author(s):

Gaoyang Zhao ◽

Aoxue Xu ◽

Fan Xu ◽

Daohuan Feng ◽

WeiliLiu ◽

...

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Mechanism Analysis ◽

Sic Wafer

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Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

Materials Science Forum ◽

10.4028/www.scientific.net/msf.471-472.26 ◽

2004 ◽

Vol 471-472 ◽

pp. 26-31 ◽

Cited By ~ 19

Author(s):

Jian Xiu Su ◽

Dong Ming Guo ◽

Ren Ke Kang ◽

Zhu Ji Jin ◽

X.J. Li ◽

...

Keyword(s):

Silicon Wafer ◽

Chemical Mechanical Polishing ◽

Material Removal ◽

Mechanical Polishing ◽

Wafer Surface ◽

Removal Mechanism ◽

Particle Movement ◽

Material Removal Mechanism ◽

The Relationship ◽

Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

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