Van der waals BP/InSe heterojunction for tunneling field-effect transistors

Journal of Materials Science ◽

10.1007/s10853-021-05784-7 ◽

2021 ◽

Vol 56 (14) ◽

pp. 8563-8574

Author(s):

Hong Li ◽

Qida Wang ◽

Peipei Xu ◽

Jing Lu

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Tunneling Field Effect Transistors

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Promises of Main-Group Metal Chalcogenide-Based Broken-Gap van der Waals Heterojunctions for Tunneling Field Effect Transistors

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01034 ◽

2021 ◽

Vol 3 (2) ◽

pp. 898-904

Author(s):

Shengying Xie ◽

Hao Jin ◽

Jianwei Li ◽

Yadong Wei

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Metal Chalcogenide ◽

Group Metal ◽

Main Group Metal ◽

Tunneling Field Effect Transistors ◽

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Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

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Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3237138 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2790 ◽

Author(s):

Chao Wang ◽

Stephen Y. Chou

Keyword(s):

Nanoimprint Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Shadow Evaporation

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Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

npj 2D Materials and Applications ◽

10.1038/s41699-018-0082-2 ◽

2018 ◽

Vol 2 (1) ◽

Author(s):

June Yeong Lim ◽

Minju Kim ◽

Yeonsu Jeong ◽

Kyeong Rok Ko ◽

Sanghyuck Yu ◽

...

Keyword(s):

Transition Metal ◽

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Transition Metal Dichalcogenides ◽

Metal Dichalcogenides ◽

Channel Transition ◽

Junction Field Effect Transistors

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Are Si/SiGe Tunneling Field-Effect Transistors a Good Idea?

ECS Meeting Abstracts ◽

10.1149/ma2010-02/30/1892 ◽

2010 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Design and Modeling of Line-Tunneling Field-Effect Transistors Using Low-Bandgap Semiconductors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2316217 ◽

2014 ◽

Vol 61 (6) ◽

pp. 1907-1913 ◽

Author(s):

Chun-Hsing Shih ◽

Nguyen Dang Chien

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Bandgap ◽

Tunneling Field Effect Transistors ◽

Bandgap Semiconductors

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Tunneling Field Effect Transistors for Enhancing Energy Efficiency and Hardware Security of IoT Platforms: Challenges and Opportunities

2018 IEEE International Symposium on Circuits and Systems (ISCAS) ◽

10.1109/iscas.2018.8350939 ◽

2018 ◽

Author(s):

Japa Aditya ◽

T. Nagateja ◽

Santosh Kumar Vishvakarma ◽

Palagani Yellappa ◽

Jun Rim Choi ◽

...

Keyword(s):

Energy Efficiency ◽

Field Effect ◽

Field Effect Transistors ◽

Hardware Security ◽

Tunneling Field Effect Transistors ◽

Challenges And Opportunities ◽

Iot Platforms ◽

Security Of Iot

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Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

Applied Physics Letters ◽

10.1063/1.5028529 ◽

2018 ◽

Vol 113 (6) ◽

pp. 062103 ◽

Author(s):

Tae-Eon Bae ◽

Kimihiko Kato ◽

Ryota Suzuki ◽

Ryosho Nakane ◽

Mitsuru Takenaka ◽

...

Keyword(s):

Electrical Properties ◽

Impurity Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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