Influence of temperature and frequency on electrical properties of electron beam evaporated bromoaluminum phthalocyanine, BrAlPc, thin films

2013 ◽  
Vol 24 (9) ◽  
pp. 3204-3209 ◽  
Author(s):  
Mohammad E. Azim-Araghi ◽  
Salar Pourteimoor ◽  
Sobhenaz Riyazi
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Influence Of Temperature

Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (1) ◽  
pp. 26-33 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Evaporation ◽  
Leakage Currents ◽  
X Ray ◽  
Transmission Electron

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

Structural, optical, and electrical properties of tin sulfide thin films grown with electron-beam evaporation

2015 ◽  
Vol 15 (9) ◽  
pp. 964-969 ◽  
Author(s):  
Hui Kyung Park ◽  
Jaeseung Jo ◽  
Hee Kyeung Hong ◽  
Gwang Yeom Song ◽  
Jaeyeong Heo
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Electron Beam Evaporation ◽  
Tin Sulfide ◽  
Optical And Electrical Properties

Optical and electrical properties of TiOx thin films deposited by electron beam evaporation

Vacuum ◽  
2007 ◽  
Vol 81 (9) ◽  
pp. 1023-1028 ◽  
Author(s):  
Jianke Yao ◽  
Jianda Shao ◽  
Hongbo He ◽  
Zhengxiu Fan
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Electron Beam Evaporation ◽  
Optical And Electrical Properties

The Electrical Properties of Thin Films of TiNx and TiCx

1975 ◽  
Vol 30 (12) ◽  
pp. 1661-1666 ◽  
Author(s):  
P. J. P. De Maayer ◽  
J. D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electron Transfer ◽  
Electron Beam ◽  
Electrical Properties ◽  
Transport Properties ◽  
Electron Concentration ◽  
Defect Structure ◽  
Electron Beam Evaporation ◽  
Transfer Theory ◽  
Electron Transfer Theory

Abstract Thin films of metallically conductive titanium mononitride and carbide were prepared by means of electron beam evaporation. The composition of the samples could be changed over appreciable ranges by introducing nitrogen in the system or adding carbon to the pure starting material, respectively. The transport properties of the resulting compounds were studied as a function of nonstoichiometry and defect structure. A plausible explanation for the different behavior of the films compared to corresponding bulk samples is given and a correlation between the change in electron concentration and the electron transfer theory is presented.

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