Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method

2018 ◽  
Vol 29 (21) ◽  
pp. 18733-18741 ◽  
Author(s):  
Vrushali S. Dongle ◽  
Akshata A. Dongare ◽  
Navaj B. Mullani ◽  
Pravin S. Pawar ◽  
Prashant B. Patil ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Device ◽  
Zno Thin Film ◽  
Reaction Method ◽  
Resistive Switching Memory ◽  
Layer Adsorption ◽  
Switching Memory ◽  
Ionic Layer

scholarly journals Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

2013 ◽  
Vol 8 (1) ◽  
pp. 483 ◽  
Author(s):  
Hsin-Wei Huang ◽  
Chen-Fang Kang ◽  
Fang-I Lai ◽  
Jr-Hau He ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Oxygen Pressure ◽  
Pressure Ratio ◽  
Zno Thin Film ◽  
Resistive Switching Memory ◽  
Switching Memory

Influence of surface null potential on nonvolatile bistable resistive switching memory behavior of dilutely aluminum doped ZnO thin film

2013 ◽  
Vol 102 (24) ◽  
pp. 243501 ◽  
Author(s):  
Mandar M. Shirolkar ◽  
Changshan Hao ◽  
Shiliu Yin ◽  
Ming Li ◽  
Haiqian Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Zno Thin Film ◽  
Resistive Switching Memory ◽  
Doped Zno ◽  
Switching Memory

scholarly journals Zeolitic-imidazole framework thin film-based flexible resistive switching memory

RSC Advances ◽  
2017 ◽  
Vol 7 (34) ◽  
pp. 21045-21049 ◽  
Author(s):  
Myung-Joo Park ◽  
Jang-Sik Lee
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Mechanical Stability ◽  
Memory Device ◽  
Dip Coating ◽  
Resistive Switching Memory ◽  
Coating Method ◽  
Dip Coating Method ◽  
Switching Memory

A flexible resistive switching memory device based on ZIF-8 is fabricated using a dip coating method. The device shows reliable resistive switching with mechanical stability.

A Redox-Based Resistive Switching Memory Device Consisting of Organic-Inorganic Hybrid Perovskite/Polymer Composite Thin Film

2017 ◽  
Vol 3 (12) ◽  
pp. 1700344 ◽  
Author(s):  
Ender Ercan ◽  
Jung-Yao Chen ◽  
Ping-Chun Tsai ◽  
Jeun-Yan Lam ◽  
Sophia Chao-Wei Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Polymer Composite ◽  
Resistive Switching ◽  
Memory Device ◽  
Composite Thin Film ◽  
Inorganic Hybrid ◽  
Resistive Switching Memory ◽  
Hybrid Perovskite ◽  
Switching Memory

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi2FeCrO6 Thin Film

2020 ◽  
Vol 12 (48) ◽  
pp. 54168-54173
Author(s):  
Hang-Lv Zhou ◽  
Yan-Ping Jiang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory
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