scholarly journals Zeolitic-imidazole framework thin film-based flexible resistive switching memory

RSC Advances ◽  
2017 ◽  
Vol 7 (34) ◽  
pp. 21045-21049 ◽  
Author(s):  
Myung-Joo Park ◽  
Jang-Sik Lee

A flexible resistive switching memory device based on ZIF-8 is fabricated using a dip coating method. The device shows reliable resistive switching with mechanical stability.

2017 ◽  
Vol 3 (12) ◽  
pp. 1700344 ◽  
Author(s):  
Ender Ercan ◽  
Jung-Yao Chen ◽  
Ping-Chun Tsai ◽  
Jeun-Yan Lam ◽  
Sophia Chao-Wei Huang ◽  
...  

2018 ◽  
Vol 29 (21) ◽  
pp. 18733-18741 ◽  
Author(s):  
Vrushali S. Dongle ◽  
Akshata A. Dongare ◽  
Navaj B. Mullani ◽  
Pravin S. Pawar ◽  
Prashant B. Patil ◽  
...  

Langmuir ◽  
2014 ◽  
Vol 30 (30) ◽  
pp. 9028-9035 ◽  
Author(s):  
J. Dugay ◽  
R. P. Tan ◽  
A. Loubat ◽  
L.-M. Lacroix ◽  
J. Carrey ◽  
...  

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.


2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.


2020 ◽  
Vol 12 (48) ◽  
pp. 54168-54173
Author(s):  
Hang-Lv Zhou ◽  
Yan-Ping Jiang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  

2015 ◽  
Vol 1131 ◽  
pp. 237-241 ◽  
Author(s):  
Akkarat Wongkaew ◽  
Chanida Soontornkallapaki ◽  
Naritsara Amhae ◽  
Wichet Lamai

This work aims to study the effect of ZnO containing in TiO2/SiO2 film on the superhydrophilic property after exposed to different types of light. The metal solutions were prepared by sol-gel technique and the film was deposited on glass slides by dip coating method. The parameter studied was the amount of ZnO in the TiO2/SiO2 film. The contents of ZnO were 5-20% weight (increased by 5%). The amount of TiO2 was constant at 30% weight. The obtained films were analyzed for their roughness. The results indicated that film roughness changed according to the ZnO contents. With 5%ZnO in the thin film, the roughness was 0.726 nm while 20%ZnO obtained the roughness of 2.128 nm. UV-Vis spectrophotometer was used for measuring of transmittance of films. At wavelength of 550 nm, the transmittances of each film were greater than 90%. Band gap energy of each film was calculated from the transmittance data. It was found that the average band gap energy of the films was 2.47 eV. Then, the films contained various amount of ZnO were grouped into 2 sets. The first set was exposed to visible light while the other set was exposed to UV. The duration of exposure was 5 hr. Both sets of films after exposed to any light were kept in a black box controlled relative humidity of 85%. Each film was measured contact angle every day. It was found that the 30%TiO2/5%Zn/SiO2 film exposed to visible light showed the best superhydrophilic property. The contact angle was about 0-5° within 3 days. This may due to the reduction of band gap energy in the presence of ZnO in TiO2/SiO2 films to 2.41 eV and the roughness of the film.


2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  

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