Ionizing radiation effects on Au/TiO2/n-Si metal–insulator-semiconductor (MIS) structure

AbstractWe present characteristics of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques . The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575°C and 625°C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625°C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

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Radiation effects on metal–insulator–semiconductor diode energetic ion detectors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584061 ◽

1988 ◽

Vol 6 (2) ◽

pp. 513 ◽

Cited By ~ 1

Author(s):

R. C. Hughes

Keyword(s):

Radiation Effects ◽

Semiconductor Diode ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

Физика и техника полупроводников ◽

10.21883/ftp.2017.12.45185.8190 ◽

2017 ◽

Vol 51 (12) ◽

pp. 1682

Author(s):

Slah Hlali ◽

Neila Hizem ◽

Adel Kalboussi

Keyword(s):

Charge Density ◽

Inversion Layer ◽

Quantum Mechanical ◽

Mis Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

P Type ◽

Different Thickness ◽

Mechanical Charge

In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal-Insulator-Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al2O3/Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi--Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C-V), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device. DOI: 10.21883/FTP.2017.12.45185.8190

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Slow wave and dielectric quasi-TEM modes of Metal-Insulator-Semiconductor (MIS) structure Through Silicon Via (TSV) in signal propagation and power delivery in 3D chip package

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) ◽

10.1109/ectc.2010.5490799 ◽

2010 ◽

Cited By ~ 31

Author(s):

Jun So Pak ◽

Jonghyun Cho ◽

Joohee Kim ◽

Junho Lee ◽

Hyungdong Lee ◽

...

Keyword(s):

Slow Wave ◽

Signal Propagation ◽

Power Delivery ◽

Mis Structure ◽

Metal Insulator ◽

Through Silicon Via ◽

Metal Insulator Semiconductor

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Metal-Insulator-Semiconductor (MIS) Structure with AlN Dielectric

10.1063/1.3160192 ◽

2009 ◽

Author(s):

A. Mahyuddin ◽

Z. Hassan ◽

K. Y. Cheong ◽

Mohamad Rusop ◽

Tetsuo Soga

Keyword(s):

Mis Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Perovskite light-emitting devices with a metal–insulator–semiconductor structure and carrier tunnelling

Journal of Materials Chemistry C ◽

10.1039/c7tc01809f ◽

2017 ◽

Vol 5 (31) ◽

pp. 7715-7719 ◽

Cited By ~ 7

Author(s):

Jing Li ◽

Qianqian Yu ◽

Lu Gan ◽

Diyan Chen ◽

Bin Lu ◽

...

Keyword(s):

Electron Tunneling ◽

Green Light ◽

Semiconductor Structure ◽

Mis Structure ◽

Working Mechanism ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Light Emitting ◽

Light Emitting Devices

A CH3NH3PbBr3 perovskite LED based on a metal–insulator–semiconductor (MIS) structure emits green light and reveals a working mechanism of electron tunneling.

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