Synthesis, Characterization and Activation energy of Nano-(GO)x/(Cu,Tl)-1234 Superconducting Composites

2022 ◽  
Author(s):  
M. Anas ◽  
Ghada A. El-Shorbagy ◽  
A. I. Abou-Aly ◽  
A. Khalaf
Keyword(s):  
Activation Energy

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

White- and Brown-Rice Supplementation Improves Insulin Tolerance, Brown Fat Activation, Energy Expenditure, and Changes the Gut Microflora in Diet-Induced Obesity

Diabetes ◽  
2018 ◽  
Vol 67 (Supplement 1) ◽  
pp. 1897-P
Author(s):  
HISASHI YOKOMIZO ◽  
ATSUSHI ISHIKADO ◽  
TAKANORI SHINJO ◽  
KYOUNGMIN PARK ◽  
YASUTAKA MAEDA ◽  
...  
Keyword(s):  
Activation Energy ◽  
Energy Expenditure ◽  
Brown Rice ◽  
Brown Fat ◽  
Gut Microflora ◽  
Diet Induced Obesity ◽  
Insulin Tolerance

Activation energy of relaxation processes in chalcogenide glasses

2013 ◽  
Vol 34 (0) ◽  
pp. 59-63
Author(s):  
А. А. Горват ◽  
В. М. Кришеник ◽  
А. Е. Кріштофорій ◽  
В. В. Мінькович ◽  
О. А. Молнар
Keyword(s):  
Activation Energy ◽  
Chalcogenide Glasses ◽  
Relaxation Processes

Dielectric Relaxation Studies of Silver Nanoparticles dispersed Liquid Crystal

2015 ◽  
Vol 8 (3) ◽  
pp. 2176-2188 ◽  
Author(s):  
Keisham Nanao Singh
Keyword(s):  
Activation Energy ◽  
Silver Nanoparticles ◽  
Liquid Crystal ◽  
Dielectric Relaxation ◽  
Relaxation Process ◽  
Relaxation Times ◽  
Low Frequency ◽  
Bulk Liquid ◽  
Molecular Rearrangement ◽  
Relaxation Studies

This article reports on the Dielectric Relaxation Studies of two Liquid Crystalline compounds - 7O.4 and 7O.6 - doped with dodecanethiol capped Silver Nanoparticles. The liquid crystal molecules are aligned homeotropically using CTAB. The low frequency relaxation process occurring above 1 MHz is fitted to Cole-Cole formula using the software Dielectric Spectra fit. The effect of the Silver Nanoparticles on the molecular dipole dynamics are discussed in terms of the fitted relaxation times, Cole-Cole distribution parameter and activation energy. The study indicate a local molecular rearrangement of the liquid crystal molecules without affecting the order of the bulk liquid crystal molecules but these local molecules surrounding the Silver Nanoparticles do not contribute to the relaxation process in the studied frequency range. The observed effect on activation energy suggests a change in interaction between the nanoparticles/liquid crystal molecules.

Pt-Pd Nanoalloy for the Unprecedented Activation of Carbon-Fluorine Bond at Low Temperature

2019 ◽  
Author(s):  
Raghu Nath Dhital ◽  
keigo nomura ◽  
Yoshinori Sato ◽  
Setsiri Haesuwannakij ◽  
Masahiro Ehara ◽  
...  
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Dft Calculations ◽  
Bond Activation ◽  
Mild Conditions ◽  
Selective Transformation ◽  
Rate Determining Step ◽  
Highly Active ◽  
Harsh Conditions ◽  
Reaction Profile

Carbon-Fluorine (C-F) bonds are considered the most inert organic functionality and their selective transformation under mild conditions remains challenging. Herein, we report a highly active Pt-Pd nanoalloy as a robust catalyst for the transformation of C-F bonds into C-H bonds at low temperature, a reaction that often required harsh conditions. The alloying of Pt with Pd is crucial to activate C-F bond. The reaction profile kinetics revealed that the major source of hydrogen in the defluorinated product is the alcoholic proton of 2-propanol, and the rate-determining step is the reduction of the metal upon transfer of the <i>beta</i>-H from 2-propanol. DFT calculations elucidated that the key step is the selective oxidative addition of the O-H bond of 2-propanol to a Pd center prior to C-F bond activation at a Pt site, which crucially reduces the activation energy of the C-F bond. Therefore, both Pt and Pd work independently but synergistically to promote the overall reaction

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

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