Sol–gel synthesis of PZT thin films on FTO glass substrates for electro-optic devices

2019 ◽  
Vol 93 (3) ◽  
pp. 623-632
Author(s):  
Ali Shoghi ◽  
Hossein Abdizadeh ◽  
Amid Shakeri ◽  
Mohammad Reza Golobostanfard
Author(s):  
Zhibiao Ma ◽  
Huiying Liu ◽  
Lingxu Wang ◽  
Bingdong Yao ◽  
Yangyang Wang ◽  
...  

In this work, BiFe0.91Zr0.09O3 (BFZrO) films are successfully prepared on ITO/glass substrates via sol-gel synthesis. The effects of different annealing atmospheres (air, O2, and N2) on the crystal structure, defect...


2017 ◽  
Vol 05 (04) ◽  
pp. 1750012 ◽  
Author(s):  
Ahlam Zekaik ◽  
Hadj Benhebal ◽  
Bedhiaf Benrabah ◽  
Aziza Chibout ◽  
Nacera Tayebi ◽  
...  

This work presents an experimental study dedicated to the synthesis and characterization of pure and Ni-doped chromium (III) oxide thin films. Sol–gel thin films with doping rates of 3%, 6%, 9%, and 12% were deposited onto glass substrates by the dip-coating method at room temperature using Cr(NO3)3: 9H2O as precursor. Using X-ray diffraction (XRD), infrared spectroscopy (FTIR), ultraviolet–visible spectroscopy (UV–Vis), and impedance spectroscopy on solids, we noted that the films are polycrystalline with a grain size ranging from 11.2[Formula: see text]nm to 24.4[Formula: see text]nm, the synthesized materials are highly transparent in the visible light with more than 90% of transmittance and have an optical bandgap less than 3.0[Formula: see text]eV overall, and the equivalent circuit of the deposited films is a resistors and capacitors (RC) parallel circuit.


Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.


2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.


1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.


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