The magnetoconcentration effect in the base–substrate pn-junction of a bipolar magnetotransistor

2009 ◽  
Vol 52 (12) ◽  
pp. 1344-1350
Author(s):  
R. D. Tikhonov
Keyword(s):  
Bipolar Magnetotransistor ◽  
Pn Junction ◽  
Base Substrate

The Study of ESD Destructive Mechanism for PN-Junction

1996 ◽  
Author(s):  
N. Wakai ◽  
M. TsuTsumi ◽  
T. Setoya
Keyword(s):  
Energy Density ◽  
Thermal Diffusion ◽  
Electric Discharge ◽  
Intermediate Region ◽  
Human Body Model ◽  
Machine Model ◽  
Pn Junction ◽  
Special Cases ◽  
Equilibrium Region

Abstract Mechanism of destruction caused by electrostatic discharge of PN junction was examined from two viewpoints; classification of destruction mode with consideration to destructive energy density, and comparison of destruction shape. Destructive energy density of PN junction was calculated based on Speakman model, and destruction mode was classified by Wunsch-Bell plot. As a result of Wunsch-Bell plot, electric discharge which occur at low resistance, for example machine model (MM: C∙R = 200pF ∙ 0Ω), resulted in adiabatic destruction that does not involve thermal diffusion. With electric discharge at high resistance, for example human body model (HBM: C∙R = 100pF ∙ 1500Ω), excessive destruction in intermediate region that involves thermal diffusion, and depending on the device, destruction at equilibrium region were proven to be reproducible. In case of MM, (adiabatic region destruction) destruction was confirmed in a wide extent of the joint part, but in case of HBM (intermediate region destruction) destruction was confirmed near the center of the joint part. From this fact, it was found that by verifying the places of destruction and their shapes, although in special cases, it is possible to know the destruction mode when destruction occurs.

THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS.

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev
Keyword(s):  
Spectral Region ◽  
Current Flow ◽  
Oxygen Adsorption ◽  
Tunneling Mechanism ◽  
Pn Junction ◽  
Flow Through ◽  
Pn Junctions ◽  
Effect Of Oxygen

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

Construction of hydroxide pn junction for water splitting electrocatalysis

2021 ◽  
Vol 292 ◽  
pp. 120160
Author(s):  
Ye Zeng ◽  
Zhen Cao ◽  
Jizhang Liao ◽  
Hanfeng Liang ◽  
Binbin Wei ◽  
...  
Keyword(s):  
Water Splitting ◽  
Pn Junction

Low temperature annealing of nanocrystalline Si paste for pn junction formation

2021 ◽  
Vol 135 ◽  
pp. 106093
Author(s):  
Yusuke Kuboki ◽  
Huan Zhu ◽  
Morihiro Sakamoto ◽  
Hiroshige Matsumoto ◽  
Kungen Teii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Pn Junction ◽  
Junction Formation ◽  
Nanocrystalline Si

Electric field distribution and voltage breakdown modeling for any PN junction

2016 ◽  
Vol 35 (1) ◽  
pp. 137-156 ◽  
Author(s):  
N. Rouger
Keyword(s):  
Numerical Methods ◽  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Poisson’S Equation ◽  
Doping Profile ◽  
Distribution Analysis ◽  
Poisson's Equation ◽  
Content Type ◽  
Pn Junction

Purpose – Scientists and engineers have been solving Poisson’s equation in PN junctions following two approaches: analytical solving or numerical methods. Although several efforts have been accomplished to offer accurate and fast analyses of the electric field distribution as a function of voltage bias and doping profiles, so far none achieved an analytic or semi-analytic solution to describe neither a double diffused PN junction nor a general case for any doping profile. The paper aims to discuss these issues. Design/methodology/approach – In this work, a double Gaussian doping distribution is first considered. However, such a doping profile leads to an implicit problem where Poisson’s equation cannot be solved analytically. A method is introduced and successfully applied, and compared to a finite element analysis. The approach is then generalized, where any doping profile can be considered. 2D and 3D extensions are also presented, when symmetries occur for the doping profile. Findings – These results and the approach here presented offer an efficient and accurate alternative to numerical methods for the modeling and simulation of mathematical equations arising in physics of semiconductor devices. Research limitations/implications – A general 3D extension in the case where no symmetry exists can be considered for further developments. Practical implications – The paper strongly simplify and ease the optimization and design of any PN junction. Originality/value – This paper provides a novel method for electric field distribution analysis.

Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching

2007 ◽  
Vol 556-557 ◽  
pp. 733-736 ◽  
Author(s):  
S. Takenami ◽  
Tomoaki Hatayama ◽  
Hiroshi Yano ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Electrical Properties ◽  
Etching Rate ◽  
Mesa Structure ◽  
Thermal Etching ◽  
Etching Method ◽  
Pn Junction ◽  
Etched Surface

Sloped sidewalls in 4H-SiC mesa structures on the (000-1) C face were formed by a Cl2-O2 thermal etching method. The etching rate of 4H-SiC (000-1) C face was 10 times faster than that of (0001) Si face, and the etching rate at 910oC was about 18μm/h. The etched surface was rather smooth, and the sidewall of the mesa was inclined to the off-axis substrate. Taking into account the off angle of about 8o toward [11-20] off direction, the angles of the sidewalls were 52-56o for the <1-100> and 55-57o for the <11-20> directions from the crystallographically accurate (000-1) C face. Epitaxial pn junction diodes with the sloped sidewalls structure were fabricated, which had good electrical properties.

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