Resonant Quantum Phenomena for an rf-SQUID: Moderate Underdamped and Extreme Underdamped Limit

2007 ◽  
Vol 14 (02) ◽  
pp. 209-216
Author(s):  
S. Rombetto ◽  
Yu. N. Ovchinnikov ◽  
V. Corato ◽  
P. Silvestrini ◽  
E. Esposito ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Transition Probability ◽  
Microwave Frequency ◽  
Potential Well ◽  
Frequency Range ◽  
Small Frequency ◽  
Quantum Phenomena ◽  
The Right ◽  
Rf Squid ◽  
Proper Frequency

We study the resonant quantum behaviour of a macroscopic superconducting system interacting with an external field. First we consider the resonant tunneling assisted by microwave frequency in the moderate underdamped quantum regime. Then we consider the resonant process in the extreme underdamped limit. In both regimes we have investigated a small frequency range, where resonant phenomena take place. The transition probability W from the left to the right potential well has been numerically calculated for an rf-SQUID as function of the external flux φx for both regimes. Results indicate that, in a proper frequency and φx range, the transition probability W can present two or three resonant peaks, depending on the damping regime.

EBG at microwave frequency range: Bragg and/or resonant effect?

2004 ◽  
Vol 42 (5) ◽  
pp. 383-385 ◽  
Author(s):  
Asier Ibáñez Loinaz ◽  
Carlos del Río Bocio
Keyword(s):  
Microwave Frequency ◽  
Frequency Range ◽  
Resonant Effect

scholarly journals Enhancing the operational efficiency of quantum random number generators

2021 ◽  
Vol 13 (2) ◽  
pp. 10-18
Author(s):  
Botond L. Márton ◽  
Dóra Istenes ◽  
László Bacsárdi
Keyword(s):  
Random Number ◽  
Statistical Tests ◽  
Practical Implementation ◽  
Random Numbers ◽  
Random Number Generators ◽  
Original Source ◽  
Negative Effect ◽  
Quantum Phenomena ◽  
The Right

Random numbers are of vital importance in today’s world and used for example in many cryptographical protocols to secure the communication over the internet. The generators producing these numbers are Pseudo Random Number Generators (PRNGs) or True Random Number Generators (TRNGs). A subclass of TRNGs are the Quantum based Random Number Generators (QRNGs) whose generation processes are based on quantum phenomena. However, the achievable quality of the numbers generated from a practical implementation can differ from the theoretically possible. To ease this negative effect post-processing can be used, which contains the use of extractors. They extract as much entropy as possible from the original source and produce a new output with better properties. The quality and the different properties of a given output can be measured with the help of statistical tests. In our work we examined the effect of different extractors on two QRNG outputs and found that witg the right extractor we can improve their quality.

scholarly journals Feasibility of Quantum Computers in Cryogenic Systems

2020 ◽  
Vol 9 (01) ◽  
pp. 24919-24920
Author(s):  
Viplove Divyasheesh ◽  
Rakesh Jain
Keyword(s):  
Quantum Computers ◽  
Computing Power ◽  
Quantum Bits ◽  
Silicon Chips ◽  
Cool Environment ◽  
Quantum Processor ◽  
Quantum Phenomena ◽  
The Right ◽  
Electronic Controller ◽  
And Control

Quantum computers consist of a quantum processor – sets of quantum bits or qubits operating at an extremely low temperature – and a classical electronic controller to read out and control the processor. The machines utilize the unusual properties of matter at extremely small scales – the fact that a qubit, can represent “1” and “0” at the same time, a phenomenon known as superposition. (In traditional digital computing, transistors in silicon chips can exist in one of two states represented in binary by a 1 or 0 not both). Under the right conditions, computations carried out with qubits are equivalent to numerous classical computations performed in parallel, thus greatly enhancing computing power compared to today’s powerful supercomputers and the ability to solve complex problems without the sort of experiments necessary to generate quantum phenomena. this technology is unstable and needs to be stored in a cool environment for faster and more secure operation.In this paper, we discuss the possibility of integrating quantum computers with electronics at deep cryogenic temperatures.  

scholarly journals Electromyographic study in spondylogenic monocorditis

2017 ◽  
Vol 98 (5) ◽  
pp. 733-736
Author(s):  
Kh A Alimetov ◽  
E B Rodnyakova
Keyword(s):  
Vocal Fold ◽  
Clinical Trial Data ◽  
Neuromuscular Disorder ◽  
Control Group ◽  
Frequency Range ◽  
Muscular Tension ◽  
Affected Side ◽  
Digital Format ◽  
Spine Pathology ◽  
The Right

Aim. To reveal relation between neuromascular disorders of the larynx and cervical spine pathology and to assess extrinsic laryngeal muscular tension in digital format. Methods. The article contains clinical experience of the survey of 130 patients, 110 of whom were included into the study group with diagnosed spondylogenic monocorditis, and 20 healthy subjects were included into control group. All patients underwent electromyographic study using the patented Kh.A. Alimetov аnd D.D. Jabarov’s technique with the use of 4-channel electromyograph Neuro-MEP (Neurosoft) with the frequency range from 5 Hz to 20 kHz. The used method of interference (global) electromyography allowed obtaining information on laryngeal muscular tension in norm and spondylogenic pathology. Results. In patients with spondylogenic monocorditis, the upper and lower muscle group tension was increased approximately by 1.2 times on the affected side in contrast to the opposite side. The received results confirm clinical trial data - on the affected side the vocal fold is visually thinner than the opposite fold, lags behind it during phonation and has decreased tension, and the increased tension of anterior laryngeal muscles on the right or left side, revealed during examination and palpation of the larynx, indicates neuromuscular disorder in cervical osteochondrosis on the affected side and involvement of certain laryngeal regions in the process of myofixation. Conclusion. Electromyographic study provides quantitative assessment of laryngeal muscular tension imbalance, allows to correctly prescribe treatment and to control it.

Performance enhancement of armchair graphene nanoribbon resonant tunneling diode using V-shaped potential well

2021 ◽  
Author(s):  
Madhusudan Mishra ◽  
N R Das ◽  
Narayan Sahoo ◽  
Trinath Sahu
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Graphene Nanoribbon ◽  
Potential Well ◽  
High Frequency Signal ◽  
Peak Voltage ◽  
Voltage Range ◽  
Tunneling Diode ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Abstract We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (RTD) using square and V-shaped potential well profiles. We use non-equilibrium Green’s function formalism to analyze the transmission and I-V characteristics. Results show that an enhancement in the peak current (Ip ) can be obtained by reducing the well width (Ww ) or barrier width (Wb ). As Ww decreases, Ip shifts to a higher peak voltage (Vp ), while there is almost no change in Vp with decreasing Wb . It is gratifying to note that there is an enhancement in Ip by about 1.6 times for a V-shaped well over a square well. Furthermore, in the case of a V-shaped well, the negative differential resistance occurs in a shorter voltage range, which may beneficial for ultra-fast switching and high-frequency signal generation. Our work anticipates the suitability of graphene, having better design flexibility, to develop ideally 2D RTDs for use in ultra-dense nano-electronic circuits and systems.

Microwave Photoconductivity Measurements to Characterize Semiconductors

1990 ◽  
Vol 189 ◽  
Author(s):  
M. Kunst
Keyword(s):  
Semiconductor Devices ◽  
Microwave Frequency ◽  
Frequency Range ◽  
General Survey ◽  
Characterization Techniques ◽  
Transient Photoconductivity

ABSTRACTAfter a general survey of characterization techniques the use of transient photoconductivity measurements in the microwave frequency range for the characterization of semiconductors and semiconductor devices for (opto)electronic applications is treated. Experimental details and applications of these measurements are given.

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