Study of schottky barrier heights of indium-tin-oxide on p-GaN using x-ray photoelectron spectroscopy and current-voltage measurements

2004 ◽  
Vol 33 (9) ◽  
pp. 1036-1040 ◽  
Author(s):  
Yow-Jon Lin ◽  
Chou-Wei Hsu
Keyword(s):  
Schottky Barrier ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Barrier Heights ◽  
Current Voltage

scholarly journals Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Ren-Hao Chang ◽  
Kai-Chao Yang ◽  
Tai-Hong Chen ◽  
Li-Wen Lai ◽  
Tsung-Hsin Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Ohmic Contact ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Layer Surface ◽  
Barrier Heights ◽  
Ammonium Sulfide ◽  
Current Voltage ◽  
Contact Electrode

We prepare a zinc oxide- (ZnO-) based Schottky diode constructed from the transparent cosputtered indium tin oxide- (ITO-) ZnO ohmic contact electrode and Ni/Au Schottky metal. After optimizing the ohmic contact property and removing the ion-bombardment damages using dilute HCl etching solution, the dilute hydrogen peroxide (H2O2) and ammonium sulfide (NH4)2Sxsolutions, respectively, are employed to modify the undoped ZnO layer surface. Both of the Schottky barrier heights with the ZnO layer surface treated by these two solutions, evaluated from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, are remarkably enhanced as compared to the untreated ZnO-based Schottky diode. Through the X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) investigations, the compensation effect as evidence of the increases in the O–H and OZnacceptor defects appearing on the ZnO layer surface after treating by the dilute H2O2solution is responsible for the improvement of the ZnO-based Schottky diode. By contrast, the enhancement on the Schottky barrier height for the ZnO layer surface treated by using dilute (NH4)2Sxsolution is attributed to both the passivation and compensation effects originating from the formation of the Zn–S chemical bond andVZnacceptors.

X-ray photoelectron spectroscopy studies of indium tin oxide nanocrystalline powder

2005 ◽  
Vol 54 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Bagas Pujilaksono ◽  
Uta Klement ◽  
Lars Nyborg ◽  
Urban Jelvestam ◽  
Sven Hill ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Nanocrystalline Powder ◽  
X Ray ◽  
Spectroscopy Studies

Nanofunctionalized Phosphor Particles for Advanced Display Applications

2001 ◽  
Author(s):  
Michael Ollinger ◽  
Valentin Craciun ◽  
Rajiv Singh
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Degradation Rate ◽  
Binding Energies ◽  
Xps Analysis ◽  
Surface Chemical ◽  
Chemical Changes ◽  
X Ray ◽  
Two Peaks

Abstract Cathodoluminescence (CL) degradation measurements showed that by applying a nano meter scale indium tin oxide (ITO) coating on micron sized ZnS:Ag particulates the degradation lifetime was dramatically improved. X-ray photoelectron spectroscopy (XPS) analysis showed that the Zn 2p3/2 and S 2p3/2 peaks of the degraded ZnS:Ag were shifted to higher binding energies, which correspond to oxidized elements, with respect to those found for as-received ZnS:Ag. The XPS analysis for the ITO coated ZnS:Ag showed a broadening of the Zn 2p3/2 and S 2p3/2 peaks, which were a convolution of two peaks. In this case, the Zn 2p3/2 and S 2p3/2 peaks corresponding to ZnS were still present together with a small shoulder corresponding to the oxidized elements. This difference in the XPS shows that the ITO coating reduced the degradation rate by slowing the surface chemical changes on the ZnS:Ag.

ELECTROCHEMICAL Co3O4 NANOPOROUS THIN FILMS SENSOR FOR HYDROGEN PEROXIDE DETECTION

NANO ◽  
2014 ◽  
Vol 09 (04) ◽  
pp. 1450047 ◽  
Author(s):  
GUANG SHENG CAO ◽  
RUILIN WANG ◽  
PEILONG WANG ◽  
XIN LI ◽  
YUE WANG ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrogen Peroxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Electrode Materials ◽  
Electrochemical Sensing ◽  
Detection Sensitivity ◽  
X Ray ◽  
Hydrogen Peroxide Detection

The nanoporous Co 3 O 4 thin films were prepared on indium tin oxide (ITO) glasses by an electrodeposition method. The surface morphology and composition of the nanoporous Co 3 O 4 films were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDS) and X-ray photoelectron spectroscopy (XPS). The results show that the as-deposited nanoporous Co 3 O 4 film is constructed by many interconnected nanoflakes with thickness of about 40 nm. The cyclic voltammetry (CV) measurement indicates that the nanoporous Co 3 O 4 films exhibit remarkable electrocatalytic activities for the hydrogen peroxide ( H 2 O 2) reduction which shows that it is a good candidate to be employed as electrode materials for electrochemical sensing of H 2 O 2. Further analysis indicated that the detection sensitivity of the sensor was 1.357 mA mM-1 cm-2 and the detection limit was estimated to be about 0.2 mM.

X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films

1999 ◽  
Vol 315 (5-6) ◽  
pp. 307-312 ◽  
Author(s):  
J.S. Kim ◽  
P.K.H. Ho ◽  
D.S. Thomas ◽  
R.H. Friend ◽  
F. Cacialli ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Oxide Thin Films ◽  
X Ray

Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy

2012 ◽  
Vol 100 (20) ◽  
pp. 201606 ◽  
Author(s):  
M. Gaowei ◽  
E. M. Muller ◽  
A. K. Rumaiz ◽  
C. Weiland ◽  
E. Cockayne ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Barrier Heights

scholarly journals Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 283
Author(s):  
Dong-Hyeon Kim ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Chemical Bonding ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Bonding Structure ◽  
Current Voltage ◽  
Direct Indication

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

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