Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

2016 ◽  
Vol 45 (11) ◽  
pp. 5655-5662 ◽  
Author(s):  
M. Siva Pratap Reddy ◽  
Peddathimula Puneetha ◽  
V. Rajagopal Reddy ◽  
Jung-Hee Lee ◽  
Seong-Hoon Jeong ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Transport Mechanisms ◽  
Temperature Dependent ◽  
Mis Diode

scholarly journals Effect of Metal Ions on Hybrid Graphite-Diamond Nanowire Growth: Conductivity Measurements from a Single Nanowire Device

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 415 ◽  
Author(s):  
Muthaiah Shellaiah ◽  
Ying-Chou Chen ◽  
Turibius Simon ◽  
Liang-Chen Li ◽  
Kien Sun ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Supramolecular Assembly ◽  
Nanowire Growth ◽  
Graphite Layer ◽  
Transport Mechanisms ◽  
Conductivity Measurements ◽  
Temperature Dependent ◽  
Supramolecular Coordination ◽  
Electrical Resistivities ◽  
Nanowire Device

Novel Cd2+ ions mediated reproducible hybrid graphite-diamond nanowire (G-DNWs; Cd2+-NDS1 NW) growth from 4-Amino-5-phenyl-4H-1,2,4-triazole-3-thiol (S1) functionalized diamond nanoparticles (NDS1) via supramolecular assembly is reported and demonstrated through TEM and AFM images. FTIR, EDX and XPS studies reveal the supramolecular coordination between functional units of NDS1 and Cd2+ ions towards NWs growth. Investigations of XPS, XRD and Raman data show the covering of graphite sheath over DNWs. Moreover, HR-TEM studies on Cd2+-NDS1 NW confirm the coexistence of less perfect sp2 graphite layer and sp3 diamond carbon along with impurity channels and flatten surface morphology. Possible mechanisms behind the G-DNWs growth are proposed and clarified. Subsequently, conductivity of the as-grown G-DNWs is determined through the fabrication of a single Cd2+-NDS1 NW device, in which the G-DNW portion L2 demonstrates a better conductivity of 2.31 × 10−4 mS/cm. In addition, we investigate the temperature-dependent carrier transport mechanisms and the corresponding activation energy in details. Finally, comparisons in electrical resistivities with other carbon-based materials are made to validate the importance of our conductivity measurements.

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

2016 ◽  
Vol 858 ◽  
pp. 1170-1173 ◽  
Author(s):  
Giuseppe Greco ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Schottky Barrier Height ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57 eV (TiN/Ti/Al) and 1.89 eV (Ni/Au). Hence, choosing the highest barrier height contact (Ti/Al) as gate electrode on a p-GaN/AlGaN/GaN heterostructure, optimized based on simulations, allowed to obtain devices with a normally-off behavior and a positive Vth of +1.3 V.

scholarly journals Charge carrier transport mechanisms of passivating contacts studied by temperature-dependent J-V measurements

2018 ◽  
Vol 178 ◽  
pp. 15-19 ◽  
Author(s):  
Frank Feldmann ◽  
Gizem Nogay ◽  
Philipp Löper ◽  
David L. Young ◽  
Benjamin G. Lee ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Transport Mechanisms ◽  
Temperature Dependent

Transport and Microstructure of Microcrystalline Silicon Alloys

1992 ◽  
Vol 283 ◽  
Author(s):  
G. Lucovsky ◽  
C. Wang ◽  
M. J. Williams ◽  
Y. L. Chen ◽  
D. M. Mauer
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Ir Absorption ◽  
Temperature Dependent ◽  
Silicon Alloys ◽  
Transmission Electron ◽  
Interfacial Potential ◽  
Carrier Transport Properties

ABSTRACTThe microstructure and electrical properties of μc-Si and μc-Si,C prepared by remote plasma-enhanced chemical-vapor deposition, PECVD, are reviewed. The microstructure has been characterized by transmission electron microscopy, TEM, infrared, IR, absorption and Raman scattering. The electrical properties were characterized by temperature-dependent dark-conductivity measurements. These studies have explained significant quantitative differences between the carrier transport properties of μc-Si and μc-Si,C alloys in terms of a band offset model for the interfacial potential steps between the amorphous and crystalline constituents of these material systems.

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