Electrical properties and carrier transport mechanisms of nanometer-scale ultra-thin channel poly-Si transistors

In this article, we review the possibility of combining conjugated polymers with nanometer-scale devices (nanodevices), in order to introduce the properties associated with conjugated polymers into such nanodevices. This approach envisages combining the highly topical disciplines of polymer electronics and nanoelectronics to engender a new subdirection of polymer nanoelectronics, which can serve as a tool to probe the behavior of polymer molecules at the nanometer/molecular level, and contribute to clarifying transport mechanisms in conjugated polymers. In this study, we exemplify this combination, using a family of linear and conjugated polymers, poly(p-phenylene-ethynylene)s (PPEs) with thiolacetate-functionalized end groups.

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Electrical Characterization of the Graphene-SiC Heterojunction

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.641 ◽

2012 ◽

Vol 717-720 ◽

pp. 641-644

Author(s):

Travis J. Anderson ◽

Karl D. Hobart ◽

Luke O. Nyakiti ◽

Virginia D. Wheeler ◽

Rachael L. Myers-Ward ◽

...

Keyword(s):

Electrical Properties ◽

Charge Carrier ◽

Graphene Sheet ◽

Carrier Transport ◽

Electrical Characterization ◽

Epitaxial Graphene ◽

Charge Carrier Transport ◽

Semiconductor System ◽

Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

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Carrier transport mechanisms in a-Si:H,F/a-Si,Ge:H,F superlattices

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(87)90226-2 ◽

1987 ◽

Vol 97-98 ◽

pp. 939-942 ◽

Cited By ~ 8

Author(s):

J.P. Conde ◽

S. Aljishi ◽

D.S. Shen ◽

M. Angell ◽

S. Wagner

Keyword(s):

Carrier Transport ◽

Transport Mechanisms

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Microwave Atomic Force Microscopy: Quantitative Measurement and Characterization of Electrical Properties on the Nanometer Scale

Applied Physics Express ◽

10.1143/apex.5.016602 ◽

2011 ◽

Vol 5 (1) ◽

pp. 016602 ◽

Cited By ~ 8

Author(s):

Lan Zhang ◽

Yang Ju ◽

Atsushi Hosoi ◽

Akifumi Fujimoto

Keyword(s):

Atomic Force Microscopy ◽

Electrical Properties ◽

Quantitative Measurement ◽

Nanometer Scale ◽

Force Microscopy ◽

Atomic Force

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Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

Journal of Materials Chemistry C ◽

10.1039/d1tc03282h ◽

2021 ◽

Vol 9 (39) ◽

pp. 13755-13760

Author(s):

Songcheng Hu ◽

Zhenhua Tang ◽

Li Zhang ◽

Dijie Yao ◽

Zhigang Liu ◽

...

Keyword(s):

Resistive Switching ◽

Negative Differential Resistance ◽

Carrier Transport ◽

Electronic Devices ◽

Differential Resistance ◽

Memory Devices ◽

Transport Mechanisms ◽

Resistive Switching Memory ◽

Potential Applications ◽

Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

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Transport Mechanisms in Electrokinetic Nanoscale Channels

Fluids Engineering ◽

10.1115/imece2004-61356 ◽

2004 ◽

Cited By ~ 3

Author(s):

Sumita Pennathur ◽

Juan G. Santiago

Keyword(s):

Field Theory ◽

Parametric Study ◽

Nanometer Scale ◽

Transport Mechanisms ◽

Electrokinetic Transport ◽

Zeta Potentials ◽

Numerical Studies ◽

Debye Layer ◽

Model Predictions ◽

Shape And Size

We investigate electrokinetic transport in nanometer-scale fluidic channels. Our study includes numerical studies of nanofluidic transport of both charged and uncharged analytes in conditions of finite Debye layer thickness and high zeta potentials. The models are based on continuum mass transport and field theory. We also perform an experimental parametric study using etched nanoscale channels. Experimental results agree with model predictions and show that bulk electrokinetic transport in nanoscale channels depends strongly on the shape and size of the EDL and on the effects of transverse electrophoretic migration.

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