Two-Dimensional Potential and Threshold Voltage Modeling of Work Function Engineered Double Gate High-k Gate Stack Schottky Barrier MOSFET

Journal of Electronic Materials ◽

10.1007/s11664-019-07133-6 ◽

2019 ◽

Vol 48 (6) ◽

pp. 3823-3832 ◽

Author(s):

Priyanka Saha ◽

Saheli Sarkhel ◽

Subir Kumar Sarkar

Keyword(s):

Work Function ◽

Schottky Barrier ◽

Threshold Voltage ◽

Double Gate ◽

Two Dimensional ◽

High K ◽

Schottky Barrier Mosfet

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Two Dimensional Model for Threshold Voltage Roll-Off of Short Channel High-k Gate-Stack Double-Gate (DG) MOSFETs

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_48 ◽

2014 ◽

pp. 193-196 ◽

Author(s):

Ekta Goel ◽

Sanjay Kumar ◽

Gopal Rawat ◽

Mirgender Kumar ◽

Sarvesh Dubey ◽

...

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Short Channel ◽

High K ◽

Two Dimensional Model

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2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET

Journal of Computational Electronics ◽

10.1007/s10825-017-1011-x ◽

2017 ◽

Vol 16 (3) ◽

pp. 658-665 ◽

Author(s):

Prashanth Kumar ◽

Brinda Bhowmick

Keyword(s):

Work Function ◽

Schottky Barrier ◽

Electrostatic Potential ◽

Threshold Voltage ◽

Analytical Modeling ◽

Schottky Barrier Mosfet

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Two dimensional analytical modeling of a high-K gate stack triple-material double gate strained silicon-on-nothing MOSFET with a vertical Gaussian doping

Journal of Computational Electronics ◽

10.1007/s10825-017-1089-1 ◽

2017 ◽

Vol 17 (1) ◽

pp. 172-180 ◽

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Modeling ◽

Strained Silicon ◽

Double Gate ◽

Two Dimensional ◽

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Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers

2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3) ◽

10.1109/iconc345789.2020.9117425 ◽

2020 ◽

Author(s):

Gaurav Dhiman ◽

Rajeev Pourush

Keyword(s):

Work Function ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

Gate Work Function

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

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A Pseudo Two-Dimensional Threshold Voltage Model for Low-Power Semiconductor Device PNIN Double-Gate-Tunneling Field Effect Transistor

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2016.5438 ◽

2016 ◽

Vol 13 (8) ◽

pp. 5454-5457

Author(s):

Hao Zhao-Ming ◽

Li Yu-Chen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Semiconductor Device ◽

Double Gate ◽

Two Dimensional ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Effect Transistor ◽

Threshold Voltage Model

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A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high-k gate dielectrics

Solid-State Electronics ◽

10.1016/j.sse.2007.01.026 ◽

2007 ◽

Vol 51 (3) ◽

pp. 387-393 ◽

Author(s):

T.K. Chiang ◽

M.L. Chen

Keyword(s):

Threshold Voltage ◽

Gate Dielectrics ◽

Double Gate ◽

High K ◽

Threshold Voltage Model

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Determining factor of effective work function in metal/bi-layer high-k gate stack structure studied by photoemission spectroscopy

Applied Physics Letters ◽

10.1063/1.3695166 ◽

2012 ◽

Vol 100 (11) ◽

pp. 112906 ◽

Author(s):

S. Toyoda ◽

H. Kumigashira ◽

M. Oshima ◽

H. Sugaya ◽

H. Morita

Keyword(s):

Work Function ◽

Photoemission Spectroscopy ◽

Effective Work ◽

Effective Work Function ◽

High K ◽

Determining Factor

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Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology

World Journal of Nano Science and Engineering ◽

10.4236/wjnse.2013.31003 ◽

2013 ◽

Vol 03 (01) ◽

pp. 17-22 ◽

Author(s):

M. Mustafa ◽

Tawseef A. Bhat ◽

M. R. Beigh

Keyword(s):

Performance Evaluation ◽

Work Function ◽

Threshold Voltage ◽

Voltage Sensitivity ◽

Double Gate ◽

Gate Work Function

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Effect of High-K Material on Gate Threshold Voltage for Double-Gate Tunnel FET

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.275-277.1984 ◽

2013 ◽

Vol 275-277 ◽

pp. 1984-1987 ◽

Author(s):

Yu Chen Li ◽

He Ming Zhang ◽

Hui Yong Hu ◽

Yu Ming Zhang ◽

Bin Wang ◽

...

Keyword(s):

Threshold Voltage ◽

Quantitative Relationship ◽

Gate Length ◽

Double Gate ◽

Limited Effect ◽

Proposed Model ◽

High K ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Improved Performance

The effect of high-k material on gate threshold voltage for double gate tunnel field-effect transistor (DG-TFET) is studied in this paper. By physically derived the model of threshold voltage for DG-TFET, the quantitative relationship between threshold voltage and gate length is also discussed. It is shown that the proposed model is consistent with the simulation results, and can also easily predict the improved performance on the gate threshold voltage when using high-κ dielectrics and the limited effect on gate threshold voltage when changing the gate length.

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