Effect of High-K Material on Gate Threshold Voltage for Double-Gate Tunnel FET
2013 ◽
Vol 275-277
◽
pp. 1984-1987
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Keyword(s):
High K
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The effect of high-k material on gate threshold voltage for double gate tunnel field-effect transistor (DG-TFET) is studied in this paper. By physically derived the model of threshold voltage for DG-TFET, the quantitative relationship between threshold voltage and gate length is also discussed. It is shown that the proposed model is consistent with the simulation results, and can also easily predict the improved performance on the gate threshold voltage when using high-κ dielectrics and the limited effect on gate threshold voltage when changing the gate length.
2009 ◽
Vol 48
(6)
◽
pp. 064503
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2015 ◽
Vol 14
(03)
◽
pp. 1450025
◽
2014 ◽
Vol 21
(2)
◽
pp. 587-592
◽
2021 ◽
2016 ◽
Vol 59
◽
pp. 30-36
◽
Keyword(s):