Anode-Side Failure of a Cuprous Oxide Semiconductor Caused by High-Density Current Loading

2019 ◽  
Vol 48 (11) ◽  
pp. 6949-6953 ◽  
Author(s):  
Takeshi Moriwaki ◽  
Kazuhiko Sasagawa ◽  
Yusuke Sugawara ◽  
Kazuhiro Fujisaki ◽  
Takahiro Mineta
Keyword(s):  
Cuprous Oxide ◽  
High Density ◽  
Oxide Semiconductor ◽  
Density Current ◽  
Anode Side ◽  
Current Loading

Electromigration Damage of Flexible Electronic Lines Printed With Ag Nanoparticle Ink

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
Daiki Saito ◽  
Kazuhiko Sasagawa ◽  
Takeshi Moriwaki ◽  
Kazuhiro Fujisaki
Keyword(s):  
Grain Growth ◽  
Current Density ◽  
High Density ◽  
Metal Nanoparticle ◽  
Density Current ◽  
Ag Nanoparticle ◽  
Severe Problem ◽  
Atomic Transport ◽  
Current Loading ◽  
Nanoparticle Ink

Abstract Flexible printed circuits (FPCs) are widely used in electronic equipment such as mobile devices and wearable sensors. The conductive electric lines in these circuits are printed using nanoparticle metal ink and ink-jet direct write methods. Physical characteristics such as flexibility and mechanical durability of metal nanoparticle ink lines have been evaluated by bending or tensile tests. In contrast, the electrical characteristics of these lines have not been sufficiently evaluated, and the failure mechanism under high-density current has not been clarified. When electric devices are scaled down, current density and Joule heating increase in conductive lines and electromigration (EM) damage becomes a severe problem. Therefore, reducing the EM damage is extremely important to enhance the device reliability. In this study, a failure analysis of Ag nanoparticle ink lines were assessed using current loading tests and microscopic observations to discuss the damage mechanism and evaluate electrical reliability under high-density current. Atomic transport due to EM was observed at 60 kA/cm2 current loading, and relatively large aggregates and grain growth were observed at 120 kA/cm2 current loading. The time to open circuit was longer at 120 kA/cm2 than at 60 kA/cm2. The formation of large aggregates and unstable changes in the potential drop were observed at the two values of current density. It is considered that aggregate formation and grain growth affected the atomic transport by EM.

Damage Analysis in Ag Nanoparticle Interconnect Line Under High-Density Electric Current

2021 ◽  
Author(s):  
Daiki Saito ◽  
Kazuhiko Sasagawa ◽  
Takeshi Moriwaki ◽  
Kazuhiro Fujisaki
Keyword(s):  
Electric Current ◽  
Printed Electronics ◽  
Diffusion Path ◽  
High Density ◽  
Metal Nanoparticle ◽  
Density Current ◽  
Ag Nanoparticle ◽  
Lift Off ◽  
Current Loading ◽  
Nanoparticle Ink

Abstract Printed electronics (PEs) have attracted attention for the fabrication of microscale electronic circuits. PEs use conductive inks which include metal nanoparticles. The conductive ink can be printed on flexible substrates for wearable devices using ink-jet printers and roll-to-roll methods. With the scaling down of electric devices, the current density and Joule heating in the device lines increase, and electromigration (EM) damage becomes significant. EM is a transportation phenomenon of metallic atoms caused by the electron wind under high-density current. Reducing the EM damage is extremely important to enhance the device reliability. With the progress in miniaturization of the metal nanoparticle ink lines, EM problem needs to be solved for ensuring the reliability of these lines. We know that the formation of aggregates and cathode damages occur due to a current loading. The diffusion path of atoms due to the EM has not been identified under the high-density current loading. In this study, a high-density electric current loading was applied to an Ag nanoparticle line. The line specimens were prepared using a lift-off method. After the current loading tests, observations were conducted using a laser microscope and scanning electron microscope. A local decrease in the line thickness and scale-shaped slit-like voids were observed due to the high-density current loading. Moreover, the microstructure of the line was modified by enlarging the Ag grain. From the results, we identified that a dominant diffusion occurred at the Ag grain boundary due to the EM.

Mechanism and CHARM2 Evaluation of P-Channel Metal Oxide Semiconductor Threshold Voltage Drop during High Density Plasma Heat-up Process

2009 ◽  
Vol 48 (8) ◽  
pp. 08HF02 ◽  
Author(s):  
Dong-Hwan Kim ◽  
Jeongyun Lee ◽  
Min-Sung Kim ◽  
Ken Tokashiki ◽  
Kyoungsub Shin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Voltage Drop ◽  
Metal Oxide Semiconductor ◽  
High Density ◽  
Oxide Semiconductor ◽  
Density Plasma

Magnetic structure of nickel nanowires after the high-density current pulse

2016 ◽  
Vol 58 (5) ◽  
pp. 946-951 ◽  
Author(s):  
N. I. Nurgazizov ◽  
D. A. Bizyaev ◽  
A. A. Bukharaev
Keyword(s):  
Magnetic Structure ◽  
Current Pulse ◽  
High Density ◽  
Density Current ◽  
Nickel Nanowires

scholarly journals Electrical explosion process and amorphous structure of carbon fibers under high-density current pulse igniting intense electron-beam accelerator

2009 ◽  
Vol 27 (3) ◽  
pp. 511-520 ◽  
Author(s):  
Limin Li ◽  
Lie Liu ◽  
Guoxin Cheng ◽  
Lei Chang ◽  
Hong Wan ◽  
...  
Keyword(s):  
Electron Beam ◽  
Current Pulse ◽  
Carbon Fibers ◽  
Electrical Explosion ◽  
High Energy ◽  
High Density ◽  
Density Current ◽  
Explosion Process ◽  
Intense Electron Beam ◽  
Intense Electron

AbstractThe development of pulsed power technology, particularly for inductive energy storage, promotes the extensive discussions of electrical explosion process in high energy density. This paper presents the electrical-explosion behavior of carbon fibers subjected to about 20 kA, ~5 µs high-density current pulse igniting an intense electron beam accelerator. After electrical explosion, and surface rupture, submicron particles, fibrillar and strip-shaped structures were observed, experimentally supporting the microstructure model (skin-core heterogeneity) of carbon fiber. Interestingly, the start and turn-off of the current were followed by radiation pulses with different intensities. It was found that the radiation was focused on the explosion stage which was characterized by an oscillating current. The instabilities of plasma produced during the explosion process play an important role in the microstructure changes of carbon fibers and the radiation generation.

Formation and properties of cuprous oxide semiconductor colloids

Langmuir ◽  
1986 ◽  
Vol 2 (4) ◽  
pp. 477-480 ◽  
Author(s):  
T. Rajh ◽  
O. I. Micic ◽  
A. J. Nozik
Keyword(s):  
Cuprous Oxide ◽  
Oxide Semiconductor
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