Microscale Observation via High-Speed X-ray Diffraction of Alloy 718 During In Situ Laser Melting

ABSTRACTA high speed x-ray diffraction system has been built around a Curved Position Sensitive Detector. This system has a hot/cold stage in a modified vacuum chamber to allow for control of the ambient gas mix while in-situ x-ray diffraction spectra are acquired. We have used this system to measure the strain in Al/Cr/SiO2 structures after abrupt changes in temperature. The good adhesion afforded by the Cr layer combined with the large difference in the thermal expansion coefficients of the Al (≃25×10−6/°K) and the quartz (≃0.5×10−6/°K) components make this an ideal sample for demonstrating the capabilities of this system. In-situ resistivity measurement provides an independent indication of the changes in the sample.

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In Situ Analysis of the Formation of thin TISI2, (>50 nm) Contacts in Submicron Cmos Structures during Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-402-257 ◽

1995 ◽

Vol 402 ◽

Cited By ~ 5

Author(s):

L. A. Clevenger ◽

C. Cabral ◽

R. A. Roy ◽

C. Lavoie ◽

R. Viswanathan ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

High Speed ◽

Formation Temperature ◽

X Ray Diffraction ◽

X Ray ◽

Patterned Structures ◽

Millisecond Time Scale ◽

Diffraction Patterns

AbstractA detailed in situ study of silicide reactions during rapid thermal annealing of patterned structures was performed to determine the effects of linewidth (0.2 to 1.1 μm), dopants (arsenic, boron or phosphorus) and silicon substrate type (poly-Si or <100>-Si) on the C49 to C54-TiSi2 transformation. A synchrotron x-ray source and a high speed position sensitive detector were used to collect x-ray diffraction patterns of the reacting phases on a millisecond time scale, in situ, during annealing. We demonstrate that most patterned C49-TiSi2 structures (0.2 to 1.1 μm in width, 2 to 4 μm2 in area) will incompletely transform into C54-TiSi2 during rapid thermal annealing. The C49 to C54 transformation ends at about 900°C and further annealing to higher temperatures does not force the remaining C49 to transform into C54. We also observed that the C54 formation temperature increases as the linewidth of the silicide structure decreases. These results are explained by a low density of C54 nuclei in C49 which leads to a one-dimensional growth of C54 grains along the length of the patterned lines. Finally the incorporation of a Mo implant into either poly-Si or <100>-Si before the deposition of titanium is shown to increase the percentage of C49 that transforms into C54 and also to lower the C54 formation temperature.

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High-speed X-ray diffraction and in situ resistivity measurements at temperatures of 100 to 1000 K

Journal of Applied Crystallography ◽

10.1107/s0021889889006412 ◽

1989 ◽

Vol 22 (6) ◽

pp. 523-527 ◽

Cited By ~ 2

Author(s):

J. Angilello ◽

R. D. Thompson ◽

K. N. Tu

Keyword(s):

High Speed ◽

Angular Resolution ◽

Gold Film ◽

Structure Property ◽

X Ray Diffraction ◽

Ray Method ◽

X Ray ◽

Resistivity Measurements ◽

Beam Focusing

A system has been constructed which uses a primary-beam focusing monochromator Debye–Scherrer X-ray method to perform simultaneously in situ X-ray diffraction and resistivity measurements at temperatures of 100 to 1000 K. The Inel curved linear detector, which is capable of recording 120° of 20 angle without moving the detector, makes the Debye–Scherrer geometry possible for high-speed dynamic studies. The angular resolution of this system is sufficient to observe the separation of a mixture of tungsten and molybdenum powders. The sensitivity of the system makes it possible to record the diffraction pattern from a 100 Å gold film. The sheet resistivity of the sample can be recorded simultaneously to provide a structure-property correlation. Comparisons with other X-ray diffraction methods using thin films are discussed.

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The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071107 ◽

1973 ◽

Vol 31 ◽

pp. 132-133 ◽

Cited By ~ 1

Author(s):

R. E. Herfert

Keyword(s):

Surface Characterization ◽

Analytical Techniques ◽

X Ray Diffraction ◽

Depth Of Penetration ◽

X Ray ◽

The Past ◽

Transmission Electron ◽

Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

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