In Situ Analysis of the Formation of thin TISI2, (>50 nm) Contacts in Submicron Cmos Structures during Rapid Thermal Annealing

1995 ◽  
Vol 402 ◽  
Author(s):  
L. A. Clevenger ◽  
C. Cabral ◽  
R. A. Roy ◽  
C. Lavoie ◽  
R. Viswanathan ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Speed ◽  
Formation Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Patterned Structures ◽  
Millisecond Time Scale ◽  
Diffraction Patterns

AbstractA detailed in situ study of silicide reactions during rapid thermal annealing of patterned structures was performed to determine the effects of linewidth (0.2 to 1.1 μm), dopants (arsenic, boron or phosphorus) and silicon substrate type (poly-Si or <100>-Si) on the C49 to C54-TiSi2 transformation. A synchrotron x-ray source and a high speed position sensitive detector were used to collect x-ray diffraction patterns of the reacting phases on a millisecond time scale, in situ, during annealing. We demonstrate that most patterned C49-TiSi2 structures (0.2 to 1.1 μm in width, 2 to 4 μm2 in area) will incompletely transform into C54-TiSi2 during rapid thermal annealing. The C49 to C54 transformation ends at about 900°C and further annealing to higher temperatures does not force the remaining C49 to transform into C54. We also observed that the C54 formation temperature increases as the linewidth of the silicide structure decreases. These results are explained by a low density of C54 nuclei in C49 which leads to a one-dimensional growth of C54 grains along the length of the patterned lines. Finally the incorporation of a Mo implant into either poly-Si or <100>-Si before the deposition of titanium is shown to increase the percentage of C49 that transforms into C54 and also to lower the C54 formation temperature.

Dislocation sources and slip band nucleation from indents on silicon wafers

2010 ◽  
Vol 43 (5) ◽  
pp. 1036-1039 ◽  
Author(s):  
J. Wittge ◽  
A. N. Danilewsky ◽  
D. Allen ◽  
P. McNally ◽  
Z. Li ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Slip Band ◽  
Rapid Thermal Annealing ◽  
Line Tension ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Imaging ◽  
Dislocation Sources ◽  
Nucleation Of Dislocations

The nucleation of dislocations at controlled indents in silicon during rapid thermal annealing has been studied byin situX-ray diffraction imaging (topography). Concentric loops extending over pairs of inclined {111} planes were formed, the velocities of the inclined and parallel segments being almost equal. Following loss of the screw segment from the wafer, the velocity of the inclined segments almost doubled, owing to removal of the line tension of the screw segments. The loops acted as obstacles to slip band propagation.

The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

2013 ◽  
Vol 341-342 ◽  
pp. 129-133
Author(s):  
Juan Qin ◽  
Niu Yi Sun ◽  
Guo Hua Wang ◽  
Min Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Seebeck Coefficient ◽  
Diffraction Patterns ◽  
P Type ◽  
Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

In-Situ x-Ray Diffraction Analysis of TiSi2 Phase Formation from a Titanium-Molybdenum Bilayer

1996 ◽  
Vol 441 ◽  
Author(s):  
C. Cabral ◽  
L. A. Clevenger ◽  
J. M. E. Harper ◽  
R. A. Roy ◽  
K. L. Saenger ◽  
...  
Keyword(s):  
Diffraction Analysis ◽  
Thermal Annealing ◽  
Phase Formation ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

AbstractWe demonstrate that the addition of a molybdenum interlayer between titanium and silicon enhances the formation of C54 TiSi2, without bypassing the formation of the C49 TiSi2 phase. In situ x-ray diffraction analysis during rapid thermal annealing, at a rate of 3 °C/s, was used to study the phase formation sequence of TiSi2 starting from a blanket bilayer of Ti on Mo on a polycrystalline Si substrate. It was shown, as in the case without the Mo layer, that the C49 TiSi2 phase forms first, followed by the C54 TiSi2 phase. The results were similar for undoped or arsenic, boron, and phosphorous doped polycrystalline silicon substrates. The temperature range over which the C49 phase is stable is reduced, on average, by 80 °C. The lower end of the range (appearance of C49) is increased by approximately 60 °C and the upper end of the range (disappearance of C49) is decreased by about 20 0C. The orientation of the C49 phase differs in that both the C49(131) and C49(060) orientations are observed, compared to the case without the Mo layer where only the C49(131) orientation is observed.

A comparison of C54-TiSi2 formation in blanket and submicron gate structures using in situ x-ray diffraction during rapid thermal annealing

1995 ◽  
Vol 10 (9) ◽  
pp. 2355-2359 ◽  
Author(s):  
L.A. Clevenger ◽  
R.A. Roy ◽  
C. Cabral ◽  
K.L. Saenger ◽  
S. Brauer ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Submicron Structures ◽  
Final Orientation

We demonstrate the use of a synchrotron radiation source for in situ x-ray diffraction analysis during rapid thermal annealing (RTA) of 0.35 μm Salicide (self-aligned silicide) and 0.4 μm Polycide (silicided polysilicon) TiSi2 Complementary Metal Oxide Semiconductor (CMOS) gate structures. It is shown that the transformation from the C49 to C54 phase of TiSi2 occurs at higher temperatures in submicron gate structures than in unpatterned blanket films. In addition, the C54 that forms in submicron structures is (040) oriented, while the C54 that forms in unpatterned Salicide films is randomly oriented. Although the preferred oreintation of the initial C49 phase was different in the Salicide and Polycide gate structures, the final orientation of the C54 phase formed was the same. An incomplete conversion of C49 into C54-TiSi2 during the RTA of Polycide gate structures was observed and is attributed to the retarding effects of phosphorus on the transition.

In-Situ X-Ray Diffraction and Resistivity Analysis of CoSi2 Phase Formation with and without a Ti Interlayer at Rapid Thermal Annealing Rates

1994 ◽  
Vol 375 ◽  
Author(s):  
C. Cabral ◽  
L. A. Clevenger ◽  
G. B. Stephenson ◽  
S. Brauer ◽  
G. Morales ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Phase Formation ◽  
Rapid Thermal Annealing ◽  
Physical Vapor Deposition ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Range ◽  
Ti Films

AbstractIt has been demonstrated, using synchrotron radiation, that at rapid thermal annealing rates (3°C/s) the formation of CoSi2 shifts to higher temperatures when a thin Ti interlayer is placed between Co and polycrystalline Si. It has also been shown that the Ti interlayer reduces the temperature range between the start of CoSi formation and CoSi2 formation (i.e. the range over which CoSi is present). 13 nm of Co deposited by physical vapor deposition on polycrystalline Si with and without either a 2 nm or 3.4 nm interlayer of Ti was analyzed in-situ by monitoring x-ray diffraction (XRD) peak intensity as a function of temperature using monochromatic radiation from a synchrotron beam line and by monitoring resistivity as a function of temperature in a rapid thermal annealing (RTA) system. The XRD analysis indicates that the phase formation proceeds from CoSi to CoSi2 in a temperature range that decreases from about 200°C to 140°C to 115°C with pure Co, Co/2 nm Ti and Co/3.4 nm Ti films respectively. The onset of the CoSi formation increases by about 135°C and 160° for Co/ 2 nm Ti and Co/3.4 nm Ti compared to pure Co. The CoSi temperature range decreases from about 75°C in pure Co to less than 50°C in Co/Ti. In-situ RTA resistance along with in-situ XRD analysis indicates that the onset formation temperatures for CoSi are about 440°C, 575°C and 600°C and the temperatures for the completion of CoSi2 formation are about 640°C, 715°C and 715°C for Co, Co / 2 nm Ti and Co / 3.4 nm Ti films respectively. The results are consistent with the Ti interlayer acting as a diffusion barrier during the initial stages of the Co-Si reaction.

Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction

2013 ◽  
Vol 40 (1) ◽  
pp. 0106003
Author(s):  
王健 Wang Jian ◽  
谢自力 Xie Zili ◽  
张韵 Zhang Yun ◽  
滕龙 Teng Long ◽  
李烨操 Li Yecao ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mg Doped

In situ coupling of atomic force microscopy and sub-micrometer focused X-ray techniques

2014 ◽  
Vol 1712 ◽  
Author(s):  
Thomas W. Cornelius ◽  
Zhe Ren ◽  
Francesca Mastropietro ◽  
Simon Langlais ◽  
Anton Davydok ◽  
...  
Keyword(s):  
Mechanical Response ◽  
Elemental Distribution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Nanowires ◽  
Force Microscopy ◽  
Indentation Tests ◽  
Scanning Force ◽  
Diffraction Patterns

ABSTRACTA scanning force microscope for in situ nanofocused X-ray studies (SFINX) has been developed which can be installed on diffractometers at synchrotron beamlines allowing for the combination with various techniques such as coherent X-ray diffraction and fluorescence. The capabilities of this device are demonstrated on Cu nanowires and on Au islands grown on sapphire (0001). The sample topography, crystallinity, and elemental distribution of the same area are investigated by recording simultaneously an AFM image, a scanning X-ray diffraction map, and a fluorescence map. Additionally, the mechanical response of Au islands is studied by in situ indentation tests employing the AFM-tip and recording 2D X-ray diffraction patterns during mechanical loading.

The new barium compound Ba4Al7+x: formation and crystal structure

2016 ◽  
Vol 71 (5) ◽  
pp. 611-619 ◽  
Author(s):  
Yurii Prots ◽  
Felix Lange ◽  
Christina Drathen ◽  
Marcus Schmidt ◽  
Yuri Grin
Keyword(s):  
Crystal Structure ◽  
Structural Model ◽  
Model Space ◽  
Binary Compound ◽  
Formation Temperature ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Laves Phases ◽  
X Ray

AbstractCombining laboratory X-ray powder diffraction with in-situ high-temperature synchrotron experiments and differential scanning calorimetry, it has been shown that Ba21Al40, Ba3Al5, Ba7Al10 and Ba4Al5 decompose peritectically at 914, 826, 756, and 732°C, respectively. In addition, a new binary compound with the composition Ba4Al7+x (x = 0.17) and the formation temperature of 841°C was found. The initial structural model (space group P63/mmc, a = 6.0807(1), c = 39.2828(8) Å) with four Ba and five Al crystallographic positions was developed. It is based on the intergrowth concept involving the neighboring Ba21Al40 and Ba3Al5 phases and the derived atomic arrangement is subsequently refined using X-ray diffraction data. The crystal structures of all phases in the Ba–Al system, except BaAl4, exhibit Kagomé nets of aluminum atoms resembling those observed for the B atoms in the Laves phases AB2. In the crystal structure of Ba4Al7+x, single Kagomé layers alternate with double slabs (MgZn2 motif) along [001] and are separated by Ba cations. Intergrowth features of Ba4Al7+x are discussed together with the neighboring Ba–Al compounds and Sr5Al9.

Development of an in situ synchrotron X-ray total scattering setup under pressurized hydrogen gas

2018 ◽  
Vol 51 (3) ◽  
pp. 796-801 ◽  
Author(s):  
Kouji Sakaki ◽  
Hyunjeong Kim ◽  
Akihiko Machida ◽  
Tetsu Watanuki ◽  
Yoshinori Katayama ◽  
...  
Keyword(s):  
Pair Distribution Function ◽  
Hydrogen Gas ◽  
Ex Situ ◽  
Sample Holder ◽  
Hydrogen Storage Materials ◽  
X Ray Diffraction ◽  
Total Scattering ◽  
X Ray ◽  
Diffraction Patterns

This article describes the development of an in situ gas-loading sample holder for synchrotron X-ray total scattering experiments, particularly for hydrogen storage materials, designed to collect diffraction and pair distribution function (PDF) data under pressurized hydrogen gas. A polyimide capillary with a diameter and thickness of 1.4 and 0.06 mm, respectively, connected with commercially available Swagelok fittings was used as an in situ sample holder. Leakage tests confirmed that this sample holder allows 3 MPa of hydrogen gas pressure and 393 K to be achieved without leakage. Using the developed in situ sample holder, significant background and Bragg peaks from the sample holder were not observed in the X-ray diffraction patterns and their signal-to-noise ratios were sufficiently good. The PDF patterns showed sharp peaks in the r range up to 100 Å. The results of Rietveld and PDF refinements of Ni are consistent with those obtained using a polyimide capillary (1.0 mm diameter and 0.04 mm thickness) that has been used for ex situ experiments. In addition, in situ synchrotron X-ray total scattering experiments under pressurized hydrogen gas up to 1 MPa were successfully demonstrated for LaNi4.6Cu.

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