Effects of Hot Wire Temperature on Properties of GeSi:H Films with High Hydrogen Dilution by Hot-Wire Chemical Vapor Deposition

2019 ◽  
Vol 24 (5) ◽  
pp. 405-408
Author(s):  
Xin Tai ◽  
Xingbing Li ◽  
Huang Zhen ◽  
Honglie Shen ◽  
Yufang Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
High Hydrogen ◽  
Wire Temperature ◽  
Hydrogen Dilution

Amorphous-to-Microcrystalline Silicon Transition in Hot-Wire Chemical Vapor Deposition

1995 ◽  
Vol 377 ◽  
Author(s):  
P. Brogueira ◽  
V. Chu ◽  
J. P. Conde
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Crystalline Fraction ◽  
Hydrogen Dilution ◽  
Process Pressure ◽  
Silicon Growth

ABSTRACTThe conductivity and the structural properties of thin films deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) from silane and hydrogen at a substrate temperature of 220 °C are shown to be strongly dependent on the filament temperature, Tfil, and process pressure, p. Amorphous silicon films are obtained at low pressures, p < 3 × 10−2Torr, for Tfil ∼ 1900 °C and FH2 = FSiH4. At this TfilJU, high deposition rates are observed, both with and without hydrogen dilution, and no silicon was deposited on the filaments. At Tfil ∼ 1500 °C, a transition from a-Si:H for p > 0.3 Torr to microcrystalline silicon (μc-Si:H) for p < 0.1 Torr occurs. In this temperature regime, silicon growth on the filaments is observed. /ic-Si:H growth both without hydrogen dilution and also in very thin films (∼ 0.05 μm) is achieved. Raman and X-Ray spectra give typical grain sizes of 10 – 20 nm, with a crystalline fraction higher than 50%. For both, Tju ∼ 1500 °C, p > 0.3 Torr and Tfil ∼ 1900 °C and p ∼ 2.7 × 10−2Torr, an increase of the crystalline fraction from 0 to ∼ 30% is observed when the hydrogen dilution, FH2/FSiH4, increases from 1 to > 4.

Low Temperature Epitaxy of n-Doped Silicon Thin Films Using Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 989 ◽  
Author(s):  
Mahdi Farrokh Baroughi ◽  
Hassan G. El-Gohary ◽  
Cherry Y. Cheng ◽  
Siva Sivoththaman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Transmission Electron

AbstractHighly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).

High Hydrogen Content Silicon Nitride For Photovoltaic Applications Deposited By Hot-Wire Chemical Vapor Deposition

2002 ◽  
Vol 715 ◽  
Author(s):  
Jason K. Holt ◽  
Maribeth Swiatek ◽  
David G. Goodwin ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Flow Ratio ◽  
Hot Wire ◽  
Film Properties ◽  
High Hydrogen ◽  
Silicon Nitride Films ◽  
Photovoltaic Applications

AbstractSilicon nitride films have been grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. Quadrupole mass spectrometry measurements revealed that NH3 should be present in large excess relative to SiH4 (<10), due to its lower decomposition probability on the wire. Silicon nitride films were produced with refractive indices ranging from 1.8-2.5 and H-content from 9-18 atomic % as the flow ratio increased from 1% to 8%. Fourier Transform Infrared Spectroscopy revealed a change from predominantly N-H to Si-H bonding as the flow ratio increases beyond 6%. Subsequent annealing studies showed different kinetics for H release from Si versus N. Films grown with a low SiH4/NH3 ratio were found to oxidize readily (23 atomic %), while larger ratios yielded no oxygen incorporation.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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