Energy band engineering via “Bite” defect located on N = 8 armchair graphene nanoribbons

Nano Research ◽  
2021 ◽  
Author(s):  
Shijie Sun ◽  
Yurou Guan ◽  
Zhenliang Hao ◽  
Zilin Ruan ◽  
Hui Zhang ◽  
...  
Author(s):  
Lam Thuy Duong Nguyen ◽  
Thi Kim Quyen Nguyen ◽  
Nguyen Huu Hanh Pham ◽  
Dang Khoa Le ◽  
Van Chinh Ngo ◽  
...  

We employed tight-binding calculations and Green’s function formalism to investigate the effect of applied electric fields on the energy band and electronic properties of bilayer armchair graphene nanoribbons (BL-AGNRs). The results show that the perpendicular electric field has a strong impact on modifying and controlling the bandgap of BL-AGNRs. At the critical values of this electric field, distortions of energy dispersion in subbands and the formation of new electronic excitation channels occur strongly. These originate from low-lying energies near the Fermi level and move away from the zero-point with the increment of the electric field. Phase transitions and structural changes clearly happen in these materials. The influence of the parallel electric field is less important in changing the gap size, resulting in the absence of the critical voltage over a very wide range [–1.5 V; 1.5 V] for the semiconductor-insulator group. Nevertheless, it is interesting to note the powerful role of the parallel electric field in modifying the energy band and electronic distribution at each energy level. These results contribute to an overall picture of the physics model and electronic structure of BL-AGNRs under stimuli, which can be a pathway to real applications in the future, particularly for electronic devices.


2020 ◽  
Vol 22 (8) ◽  
pp. 4533-4543 ◽  
Author(s):  
Florentino López-Urías ◽  
Juan L. Fajardo-Díaz ◽  
Alejandro J. Cortés-López ◽  
Cristina L. Rodríguez-Corvera ◽  
Luis E. Jiménez-Ramírez ◽  
...  

Results are shown for the band structure, formation energy, band gaps, oxidation and reduction energies, electronic charge deficit, and global hydrophilicity index.


2019 ◽  
Vol 7 (21) ◽  
pp. 6241-6245 ◽  
Author(s):  
Wei-Wei Yan ◽  
Xiao-Fei Li ◽  
Xiang-Hua Zhang ◽  
Xinrui Cao ◽  
Mingsen Deng

Boron adsorption induces a heavily localized state right at the Fermi level only in the family of W = 3p + 1 and thus spin-splitting occurs spontaneously.


Author(s):  
Penghui Ji ◽  
Oliver MacLean ◽  
Gianluca Galeotti ◽  
Dominik Dettmann ◽  
Giulia Berti ◽  
...  

2021 ◽  
Vol 769 ◽  
pp. 138387
Author(s):  
Gesiel G. Silva ◽  
Wiliam F. da Cunha ◽  
Marcelo L. Pereira Júnior ◽  
Luiz F. Roncaratti ◽  
Luiz A. Ribeiro

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