Room temperature, ion energy-controlled deposition of silicon nitride films in a SiH4-N2 plasma

2010 ◽  
Vol 16 (4) ◽  
pp. 621-625
Author(s):  
Byungwhan Kim ◽  
Minji Kwon ◽  
Yong Ho Seo
Keyword(s):  
Silicon Nitride ◽  
Room Temperature ◽  
Ion Energy ◽  
Silicon Nitride Films ◽  
Controlled Deposition ◽  
N2 Plasma

Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source

2004 ◽  
Vol 151 (10) ◽  
pp. C649 ◽  
Author(s):  
Gratiela I. Isai ◽  
Jisk Holleman ◽  
Hans Wallinga ◽  
Pierre H. Woerlee
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Room Temperature ◽  
Plasma Source ◽  
Ecr Plasma ◽  
Silicon Nitride Films

Prepared and Surface Analyzed of Nano-Silicon Nitride Thin Films

2011 ◽  
Vol 233-235 ◽  
pp. 2015-2018
Author(s):  
Gui Wen Yu ◽  
Jing Dong ◽  
Ye Tian ◽  
Wen Xin Li ◽  
Xue Gong
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Deposition Rate ◽  
Room Temperature ◽  
Atomic Ratio ◽  
Sputtering Deposition ◽  
Depth Profiles ◽  
Silicon Nitride Films ◽  
Nano Silicon ◽  
Temperature Depth

Thin silicon nitride films were prepared on PET by r.f. reactive sputtering. Deposition Rate, reactive mechanisms, the thickness attribution, chemical stoichiometry and impurity were studied by means of RBS, XPS, and ellipsometer. Results show that chemical stoichiometric films with N-to-Si atomic ratio of 4:3 were achieved even at room temperature. Depth profiles of XPS and SIMS reveal that oxide exists only at the interface between nitride and substrate and Ar atoms are buried in the films.

Ultrathin Nitride Films Grown Under Low-Energy Ion Bombardment

1993 ◽  
Vol 316 ◽  
Author(s):  
Zhong-Min Ren ◽  
Zhi-Feng Ying ◽  
Xia-Xing Xiong ◽  
Mao-Qi He ◽  
Yuan-Cheng DU ◽  
...  
Keyword(s):  
Activation Energy ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Atomic Ratio ◽  
Low Energy ◽  
Ion Energy ◽  
Silicon Nitride Films ◽  
Thermal Nitridation

ABSTRACTBombardment of silicon surfaces by low-energy nitrogen ions has been investigated as a possible process for growing films of silicon nitride at relatively low temperature(<500°C). Broad ion beams of energy 300–1200eV have been used to grow ultrathin silicon nitride films. Film thickness and chemical states are analyzed using ellipsometery, X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy(AES). As a result, thicknesses dependence on ion energy, substrate temperature and implantation time have been investigated. The thicknesses of films obtained appear to increase with ion energy in the range from 300 to 1200eV, and with time of bombardment. The thicknesses are also observed to vary slightly with substrate temperature. The growth mechanism has also been investigated and discussed. The average activation energy of nitridation rates is about 3.5meV which indicates nonthermal process kinetics, compared to an activation energy of 0.2–0.6eV for thermal nitridation. AES results show that the atomic ratio [N]/[Si] is about 1.5, larger than that of pure Si3N4. All the analyses show that silicon nitride films of about 60Å thickness have been grown on silicon by low-energy ion beam nitridation.

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