scholarly journals Deposition of silicon nitride film at room temperature using a SiH4–NH3–N2 plasma

2010 ◽  
Vol 118 (1384) ◽  
pp. 1188-1191
Author(s):  
Su Jin LEE ◽  
Byungwhan KIM
Keyword(s):  
Silicon Nitride ◽  
Room Temperature ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
N2 Plasma

scholarly journals Direct Measurement of the Reactivity of NH and oh on a Silicon Nitride Surface

1993 ◽  
Vol 334 ◽  
Author(s):  
R. J. Buss ◽  
P. Ho ◽  
E. R. Fisher ◽  
William G. Breiland
Keyword(s):  
Silicon Nitride ◽  
Surface Temperature ◽  
Room Temperature ◽  
Surface Reaction ◽  
Film Surface ◽  
Device Fabrication ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Oh Radicals ◽  
Rotational States

AbstractIn order to understand and successfully model the plasma processing used in device fabrication, it is important to determine the role played by plasma-generated radicals. We have used the IRIS technique (Imaging of Radicals Interacting with Surfaces) to obtain the reactivity of NH(X3∑-) and OH(X2II) at a silicon nitride film surface while the film is exposed to a plasma-type environment. The reactivity of NH was found to be zero both during exposure of the surface to an NH3 plasma and during active deposition of silicon nitride from a SiH4/NH3 plasma. No NH surface reaction was detectable for any rotational states of NH and over a surface temperature range of 300-700 K. OH radicals generated in an H2O plasma were found to have a reactivity of 0.57 on a room temperature oxidized silicon nitride surface. The OH reactivity falls to zero as the temperature of the substrate is raised.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

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