An Analytical Model Including Interface Traps and Temperature Effects in Negative Capacitance Double Gate Field Effect Transistor

Silicon ◽

10.1007/s12633-020-00643-7 ◽

2020 ◽

Author(s):

Yibiao Dong ◽

Ru Han ◽

Danghui Wang ◽

Ruofei Wang ◽

Chenmeng Guo

Keyword(s):

Analytical Model ◽

Temperature Effects ◽

Field Effect ◽

Field Effect Transistor ◽

Negative Capacitance ◽

Double Gate ◽

Interface Traps ◽

Effect Transistor

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Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric

Journal of Semiconductors ◽

10.1088/1674-4926/39/10/104004 ◽

2018 ◽

Vol 39 (10) ◽

pp. 104004

Author(s):

Huifang Xu

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Negative Capacitance ◽

Double Gate ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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A 2-D semi-analytical model of double-gate tunnel field-effect transistor

Journal of Semiconductors ◽

10.1088/1674-4926/36/5/054002 ◽

2015 ◽

Vol 36 (5) ◽

pp. 054002 ◽

Author(s):

Huifang Xu ◽

Yuehua Dai ◽

Ning Li ◽

Jianbin Xu

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics

Journal of Applied Physics ◽

10.1063/1.4808452 ◽

2013 ◽

Vol 113 (21) ◽

pp. 214506 ◽

Author(s):

Edward Namkyu Cho ◽

Yong Hyeon Shin ◽

Ilgu Yun

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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Two-dimensional analytical model for hetero-junction double-gate tunnel field-effect transistor with a stacked gate-oxide structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.054201 ◽

2017 ◽

Vol 56 (5) ◽

pp. 054201 ◽

Author(s):

Hui Fang Xu ◽

Bang Gui Guan

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Two Dimensional ◽

Oxide Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.04eb08 ◽

2016 ◽

Vol 55 (4S) ◽

pp. 04EB08 ◽

Author(s):

Chien Liu ◽

Ping-Guang Chen ◽

Meng-Jie Xie ◽

Shao-Nong Liu ◽

Jun-Wei Lee ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Capacitance ◽

Double Gate ◽

Simulation Based ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Subthreshold analytical model for dual-material double gate ferroelectric field effect transistor (DMGFeFET)

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab194d ◽

2019 ◽

Vol 34 (6) ◽

pp. 065008 ◽

Author(s):

Hema Mehta ◽

Harsupreet Kaur

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

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Analytical Model for Double-Gate Tunneling Field-Effect Transistor (DG-TFET) Using Carrier Concentration Approach

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2013.2829 ◽

2013 ◽

Vol 10 (5) ◽

pp. 1202-1208 ◽

Author(s):

Rakhi Narang ◽

Manoj Saxena ◽

R. S. Gupta ◽

Mridula Gupta

Keyword(s):

Carrier Concentration ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

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Analysis of size quantization and temperature effects on the threshold voltage of thin silicon film double-gate metal-oxide-semiconductor field-effect transistor (MOSFET)

Journal of Applied Physics ◽

10.1063/1.4812735 ◽

2013 ◽

Vol 114 (1) ◽

pp. 014507 ◽

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Temperature Effects ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

Thin Silicon Film

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Superior Performance of a Negative-capacitance Double-gate Junctionless Field-effect Transistor with Additional Source-drain Doping

Informacije MIDEM - Journal of Microelectronics Electronic Components and Materials ◽

10.33180/infmidem2020.302 ◽

2020 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Superior Performance ◽

Negative Capacitance ◽

Double Gate ◽

Additional Source ◽

Effect Transistor

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Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect

Journal of Semiconductors ◽

10.1088/1674-4926/36/2/024001 ◽

2015 ◽

Vol 36 (2) ◽

pp. 024001 ◽

Author(s):

Shoubhik Gupta ◽

Bahniman Ghosh ◽

Shiromani Balmukund Rahi

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Mechanical Effect ◽

Quantum Mechanical ◽

Double Gate ◽

Quantum Mechanical Effect ◽

Effect Transistor

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