Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs

Silicon ◽

10.1007/s12633-021-01327-6 ◽

2021 ◽

Author(s):

Himanshi Awasthi ◽

Vaibhav Purwar ◽

Abhinav Gupta

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Subthreshold Current ◽

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Modeling Subthreshold Current and Threshold Voltage of Fully-Depleted Double-gate Junctionless(J-less) Transistors

10.7567/ssdm.2011.p-3-9 ◽

2011 ◽

Author(s):

Z. M. Lin ◽

H. C. Lin ◽

K. M. Liu ◽

T. Y. Huang

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Fully Depleted ◽

Subthreshold Current

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Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.03.047 ◽

2017 ◽

Vol 106 ◽

pp. 147-155 ◽

Author(s):

Ekta Goel ◽

Sanjay Kumar ◽

Balraj Singh ◽

Kunal Singh ◽

Satyabrata Jit

Keyword(s):

Subthreshold Swing ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Subthreshold Current ◽

Two Dimensional Model ◽

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A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges

Journal of Computational Electronics ◽

10.1007/s10825-019-01377-5 ◽

2019 ◽

Vol 18 (4) ◽

pp. 1173-1181 ◽

Author(s):

Subba Rao Suddapalli ◽

Bheema Rao Nistala

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Strained Si ◽

Interface Charges ◽

Dual Material ◽

Threshold Voltage Model ◽

Center Potential

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Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2067 ◽

2015 ◽

Vol 29 (2) ◽

pp. 230-242 ◽

Author(s):

Ping Wang ◽

Yiqi Zhuang ◽

Cong Li ◽

Yuqi Liu ◽

Zhi Jiang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

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An Accurate Model for Threshold Voltage Analysis of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-020-00553-8 ◽

2020 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Accurate Model ◽

Effect Transistor ◽

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Dual-material double-gate tunnel FET: gate threshold voltage modeling and extraction

Journal of Computational Electronics ◽

10.1007/s10825-016-0816-3 ◽

2016 ◽

Vol 15 (3) ◽

pp. 763-769 ◽

Author(s):

Samantha Lubaba Noor ◽

Samia Safa ◽

Md. Ziaur Rahman Khan

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

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Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs

Chinese Physics B ◽

10.1088/1674-1056/25/3/038502 ◽

2016 ◽

Vol 25 (3) ◽

pp. 038502

Author(s):

Yan-hui Xin ◽

Sheng Yuan ◽

Ming-tang Liu ◽

Hong-xia Liu ◽

He-cai Yuan

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Two Dimensional ◽

Strained Si ◽

Subthreshold Current ◽

Dimensional Models

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2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2520096 ◽

2016 ◽

Vol 63 (3) ◽

pp. 966-973 ◽

Author(s):

Ekta Goel ◽

Sanjay Kumar ◽

Kunal Singh ◽

Balraj Singh ◽

Mirgender Kumar ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Double Gate ◽

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A two-dimensional (2D) analytical surface potential and subthreshold current model for the underlap dual-material double-gate (DMDG) FinFET

Journal of Computational Electronics ◽

10.1007/s10825-016-0899-x ◽

2016 ◽

Vol 15 (4) ◽

pp. 1316-1325 ◽

Author(s):

Vadthiya Narendar ◽

Saurabh Rai ◽

Siddharth Tiwari

Keyword(s):

Surface Potential ◽

Current Model ◽

Double Gate ◽

Two Dimensional ◽

Subthreshold Current ◽

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Quantum Analytical Model for Inversion Charge and Threshold Voltage of Short-Channel Dual-Material Double-Gate SON MOSFET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2275184 ◽

2013 ◽

Vol 60 (9) ◽

pp. 2734-2740 ◽

Author(s):

Sourav Naskar ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Double Gate ◽

Short Channel ◽

Inversion Charge ◽

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