A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges
2019 ◽
Vol 18
(4)
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pp. 1173-1181
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2020 ◽
Vol 34
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2012 ◽
Vol 9
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pp. 441-447
2008 ◽
Vol 55
(9)
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pp. 2512-2516
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2005 ◽
Vol 49
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pp. 271-274
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Vol 13
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pp. 5454-5457