A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges

2019 ◽  
Vol 18 (4) ◽  
pp. 1173-1181 ◽  
Author(s):  
Subba Rao Suddapalli ◽  
Bheema Rao Nistala
2008 ◽  
Vol 55 (9) ◽  
pp. 2512-2516 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
G. Pananakakis ◽  
G. Ghibaudo

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