Modeling Subthreshold Current and Threshold Voltage of Fully-Depleted Double-gate Junctionless(J-less) Transistors

Mapping Intimacies ◽

10.7567/ssdm.2011.p-3-9 ◽

2011 ◽

Author(s):

Z. M. Lin ◽

H. C. Lin ◽

K. M. Liu ◽

T. Y. Huang

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Fully Depleted ◽

Subthreshold Current

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Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs

Silicon ◽

10.1007/s12633-021-01327-6 ◽

2021 ◽

Author(s):

Himanshi Awasthi ◽

Vaibhav Purwar ◽

Abhinav Gupta

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Subthreshold Current ◽

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Subthreshold current modeling for fully depleted short channel double-gate MOSFETs with consideration of structure asymmetry

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.1927 ◽

2013 ◽

Vol 27 (5-6) ◽

pp. 875-882

Author(s):

Xi Liu ◽

Xiaoshi Jin ◽

Jong-Ho Lee

Keyword(s):

Double Gate ◽

Short Channel ◽

Fully Depleted ◽

Subthreshold Current

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Threshold voltage modeling of deep-submicron double-gate fully-depleted SOI MOSFET

2007 7th International Conference on ASIC ◽

10.1109/icasic.2007.4415838 ◽

2007 ◽

Author(s):

Zhang Zhengfan ◽

Fang Jian ◽

Li Ruzhang ◽

Zhang Zhengyuan ◽

Li Zhaoji

Keyword(s):

Threshold Voltage ◽

Deep Submicron ◽

Double Gate ◽

Fully Depleted ◽

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Deep submicrometer double-gate fully-depleted SOI PMOS devices: a concise short-channel effect threshold voltage model using a quasi-2D approach

IEEE Transactions on Electron Devices ◽

10.1109/16.535323 ◽

1996 ◽

Vol 43 (9) ◽

pp. 1387-1393 ◽

Author(s):

Shiao-Shien Chen ◽

J.B. Kuo

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Fully Depleted ◽

Channel Effect ◽

Deep Submicrometer ◽

Threshold Voltage Model

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A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET

2012 IEEE International Conference on Electro/Information Technology ◽

10.1109/eit.2012.6220737 ◽

2012 ◽

Author(s):

Nadim Chowdhury ◽

Zubair Al Azim ◽

Imtiaz Ahmed ◽

Iftikhar Ahmad Niaz ◽

Md. Hasibul Alam ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Voltage Control ◽

Double Gate ◽

Fully Depleted ◽

Physically Based

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Analysis of gate misalignment effect on the threshold voltage of double-gate (DG) ultrathin fully-depleted (FD) silicon-on-itisulator (SOI) NMOS devices using a compact model considering fringing electric field effect

The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. ◽

10.1109/edmo.2003.1259988 ◽

2004 ◽

Author(s):

J.B. Kuo ◽

E.C. Sun ◽

M.T. Lin

Keyword(s):

Electric Field ◽

Threshold Voltage ◽

Field Effect ◽

Compact Model ◽

Electric Field Effect ◽

Double Gate ◽

Fully Depleted ◽

Misalignment Effect ◽

Fringing Electric Field

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Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs

Chinese Physics B ◽

10.1088/1674-1056/25/3/038502 ◽

2016 ◽

Vol 25 (3) ◽

pp. 038502

Author(s):

Yan-hui Xin ◽

Sheng Yuan ◽

Ming-tang Liu ◽

Hong-xia Liu ◽

He-cai Yuan

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Two Dimensional ◽

Strained Si ◽

Subthreshold Current ◽

Dimensional Models

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Modeling the channel potential and threshold voltage of a fully depleted Double Gate Junctionless FET

2012 International Conference on Communications, Devices and Intelligent Systems (CODIS) ◽

10.1109/codis.2012.6422158 ◽

2012 ◽

Author(s):

Parthasarathi Gupta ◽

Debasree Burman ◽

Jayita Das ◽

Madhuchhanda Brahma ◽

Hafizur Rahaman ◽

...

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Fully Depleted ◽

Channel Potential

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Modeling of Threshold Voltage for 3D Double Gate Fully Depleted SOI MOSFET

2019 6th International Conference on Signal Processing and Integrated Networks (SPIN) ◽

10.1109/spin.2019.8711771 ◽

2019 ◽

Author(s):

Neha Goel ◽

Manoj Kumar Pandey

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Fully Depleted ◽

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Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc14 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC14 ◽

Author(s):

Zer-Ming Lin ◽

Horng-Chih Lin ◽

Keng-Ming Liu ◽

Tiao-Yuan Huang

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Fully Depleted ◽

Subthreshold Current ◽

Junctionless Transistor

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