Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs

Chinese Physics B ◽

10.1088/1674-1056/25/3/038502 ◽

2016 ◽

Vol 25 (3) ◽

pp. 038502

Author(s):

Yan-hui Xin ◽

Sheng Yuan ◽

Ming-tang Liu ◽

Hong-xia Liu ◽

He-cai Yuan

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Two Dimensional ◽

Strained Si ◽

Subthreshold Current ◽

Dimensional Models

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A comparison of simple and numerical two-dimensional models for the threshold voltage of short channel MOSTs

Solid-State Electronics ◽

10.1016/0038-1101(77)90209-x ◽

1977 ◽

Vol 20 (12) ◽

pp. 993-998 ◽

Author(s):

D.J. Coe ◽

H.E. Brockman ◽

K.H. Nicholas

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Dimensional Models

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Two Dimensional Analytical Threshold Voltage Model of Nanoscale Strained Si/Si1–x Gex MOSFETs Including Quantum Mechanical Effects

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2012.2044 ◽

2012 ◽

Vol 9 (3) ◽

pp. 441-447

Author(s):

Kang Eng Siew ◽

Yau Wei Heong ◽

Sohail Anwar ◽

Razali Ismail

Keyword(s):

Threshold Voltage ◽

Quantum Mechanical ◽

Two Dimensional ◽

Strained Si ◽

Mechanical Effects ◽

Quantum Mechanical Effects ◽

Threshold Voltage Model

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Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs

Silicon ◽

10.1007/s12633-021-01327-6 ◽

2021 ◽

Author(s):

Himanshi Awasthi ◽

Vaibhav Purwar ◽

Abhinav Gupta

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Subthreshold Current ◽

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Modeling Subthreshold Current and Threshold Voltage of Fully-Depleted Double-gate Junctionless(J-less) Transistors

10.7567/ssdm.2011.p-3-9 ◽

2011 ◽

Author(s):

Z. M. Lin ◽

H. C. Lin ◽

K. M. Liu ◽

T. Y. Huang

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Fully Depleted ◽

Subthreshold Current

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A Pseudo Two-Dimensional Threshold Voltage Model for Low-Power Semiconductor Device PNIN Double-Gate-Tunneling Field Effect Transistor

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2016.5438 ◽

2016 ◽

Vol 13 (8) ◽

pp. 5454-5457

Author(s):

Hao Zhao-Ming ◽

Li Yu-Chen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Semiconductor Device ◽

Double Gate ◽

Two Dimensional ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Effect Transistor ◽

Threshold Voltage Model

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Two-dimensional modeling of subthreshold current and subthreshold swing of double-material-gate (DMG) strained-Si (s-Si) on SGOI MOSFETs

Journal of Computational Electronics ◽

10.1007/s10825-013-0442-2 ◽

2013 ◽

Vol 12 (2) ◽

pp. 275-280 ◽

Author(s):

Mirgender Kumar ◽

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Subthreshold Swing ◽

Two Dimensional ◽

Strained Si ◽

Subthreshold Current ◽

Dimensional Modeling

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Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

Indian Journal of Physics ◽

10.1007/s12648-016-0918-6 ◽

2016 ◽

Vol 91 (4) ◽

pp. 383-390 ◽

Author(s):

Ekta Goel ◽

Balraj Singh ◽

Sanjay Kumar ◽

Kunal Singh ◽

Satyabrata Jit

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Strained Si ◽

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A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2010.1119 ◽

2010 ◽

Vol 5 (3) ◽

pp. 332-339 ◽

Author(s):

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Surface Potential ◽

Doping Profile ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Subthreshold Current ◽

Two Dimensional Model

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Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.03.047 ◽

2017 ◽

Vol 106 ◽

pp. 147-155 ◽

Author(s):

Ekta Goel ◽

Sanjay Kumar ◽

Balraj Singh ◽

Kunal Singh ◽

Satyabrata Jit

Keyword(s):

Subthreshold Swing ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Subthreshold Current ◽

Two Dimensional Model ◽

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A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges

Journal of Computational Electronics ◽

10.1007/s10825-019-01377-5 ◽

2019 ◽

Vol 18 (4) ◽

pp. 1173-1181 ◽

Author(s):

Subba Rao Suddapalli ◽

Bheema Rao Nistala

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Strained Si ◽

Interface Charges ◽

Dual Material ◽

Threshold Voltage Model ◽

Center Potential

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