Structural and morphological properties of ITO thin films grown by magnetron sputtering

This investigation deals with the effect of temperature on the optical and morphological properties of Zinc Oxide thin films prepared by radio-Frequency (RF) magnetron sputtering technique. In the present work, zinc oxide (ZnO) thin films have been deposited on glass substrates from 50°C to 300°C by radio frequency magnetron sputtering. The effects of deposition temperature on the crystallization behaviour and optical properties of the films have been studied. The thin films were characterized using Ultraviolet Visible Spectroscopy (UV-VIS), Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction Analysis (XRD). From the UV-VIS testing, the average transmission percentage of the films is between 80-95% for all deposition temperatures meanwhile the energy gap of ZnO thin films varies from 3.26 eV to 3.35 eV which is not much different from the theoretical value. Also, the grain size is getting smaller from 3.886nm, 3.216nm, 3.119nm and 3.079nm with respect to the increasing deposition temperature 50°C, 100°C, 200°C and 300°C respectively whereas the average grain size per intercept value is increasing. The patterns of the peak were about the same for all deposition temperature where the thin films have polycrystalline hexagonal wurtzite structure with the orientation perpendicular (002) to the substrate surface (c-axis orientation) at 34.5(2θ).

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Characteristics of ITO Thin Films for the Plasma Display Panel Prepared by a MF Dual Magnetron Sputtering in the Oxygen Atmosphere

Molecular Crystals and Liquid Crystals ◽

10.1080/15421400802619768 ◽

2009 ◽

Vol 499 (1) ◽

pp. 178/[500]-184/[506]

Author(s):

Jung Hyun Lee ◽

Sang Ho Sohn ◽

Ji Hyun Moon ◽

Myung Sub Park ◽

Sang Gul Lee

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Oxygen Atmosphere ◽

Plasma Display Panel ◽

Ito Thin Films ◽

Plasma Display

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The effect of post-annealing under CdCl2 atmosphere on the properties of ITO thin films deposited by DC magnetron sputtering

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-009-9932-1 ◽

2009 ◽

Vol 21 (5) ◽

pp. 441-444 ◽

Cited By ~ 2

Author(s):

Shenghao Wang ◽

Jingquan Zhang ◽

Bo Wang ◽

Lianghuan Feng ◽

Yaping Cai ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Dc Magnetron Sputtering ◽

Post Annealing ◽

Ito Thin Films

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Rf Magnetron Sputtering Epitaxially Grown (Pb,La)TiO3 Thin Films on (0001) A12O3 and (001) SrTiO3 for Nonlinear Optical Applications

MRS Proceedings ◽

10.1557/proc-541-711 ◽

1998 ◽

Vol 541 ◽

Author(s):

U. Rabibisoa ◽

B. Agius

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Nonlinear Optical ◽

Rf Magnetron Sputtering ◽

Morphological Properties ◽

Optical Losses ◽

Optical Applications ◽

Film Substrate ◽

Nonlinear Optical Applications ◽

Air Film

AbstractFerroelectrics are known to be excellent materials for nonlinear optics. Miniaturization of circuits using these materials requires an optimization of structural and morphological properties of thin films, to minimize optical losses. The first condition is the use of epitaxially grown thin films. The second one is the optimization of the morphological properties, in particular the roughness at the air/film and film/substrate interfaces must be the lowest possible.The aim of this work is to study the effect of the deposition atmosphere on these properties for PLT thin films grown on (0001) A12O3 and (001) SrTiO3.

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INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

Surface Review and Letters ◽

10.1142/s0218625x13500455 ◽

2013 ◽

Vol 20 (05) ◽

pp. 1350045 ◽

Cited By ~ 5

Author(s):

BO HE ◽

LEI ZHAO ◽

JING XU ◽

HUAIZHONG XING ◽

SHAOLIN XUE ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Visible Region ◽

Rf Magnetron Sputtering ◽

Electrical And Optical Properties ◽

High Quantum Efficiency ◽

Ito Thin Films ◽

Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

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Influence of indium and hydrogen co-doping on optical and electrical properties of zinc oxide thin films deposited by DC magnetron sputtering

Science and Technology Development Journal ◽

10.32508/stdj.v22i2.1657 ◽

2019 ◽

Vol 22 (2) ◽

pp. 253-257

Author(s):

Nguyen Huu Truong ◽

Tinh Van Nguyen ◽

Tuan Anh Thanh Pham ◽

Dung Van Hoang ◽

Hung Minh Vu ◽

...

Keyword(s):

Thin Films ◽

Solar Cells ◽

Magnetron Sputtering ◽

Hydrogen Plasma ◽

Response Speed ◽

Indium Content ◽

Morphological Properties ◽

High Electron ◽

Dc Magnetron Sputtering ◽

Doped Zno

Introduction: ZnO-based thin films, known as potential transparent-conducting oxides (TCO), have still attracted much attention in applications for good-performance electrodes and inner layers in solar cells. Recently, the research tendency has focused on improving carrier mobility rather than carrier concentration to enhance performance and response speed of TCO thin films. In this work, Indium, and Hydrogen co-doped ZnO (HIZO) thin films were deposited by using DC magnetron sputtering technique in hydrogen-plasma atmosphere. Methods: Indium-doped ZnO ceramics were used as sputtering targets, in which, Indium content varied from 0.07 to 1.0 at.%. The electrical, optical, structural and surface morphological properties of the as-deposited films were investigated by using Hall effect-based measurement, UV-Vis spectra, X-ray diffraction (XRD) and fieldemission scanning electron microscopy (FE-SEM), respectively. Results: As a result, the HIZO films sputtered from the 0.1 at.% In-doped ZnO target and at H2/(H2+Ar) ratio of 3.5% exhibit high electron mobility (47 cm2/Vs), the lowest resistivity (4.9x10-4 Ω.cm) and sheet resistance (4.7 Ω/sq.), simultaneously, high average transmittance (>80%) in the visible – near IR spectrum regions. Conclusion: Based on these results, the HIZO films are considered as potential TCO thin films that can be well-used as transparent electrodes in solar cells.

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