Methods for obtaining characteristic γ-ray net peak count from interlaced overlap peak in HPGe γ-ray spectrometer system

2019 ◽  
Vol 30 (1) ◽  
Author(s):  
Yue-Li Song ◽  
Feng-Qun Zhou ◽  
Yong Li ◽  
Xiao-Jun Sun ◽  
Peng-Fei Ji
Author(s):  
P. E. Batson ◽  
C. H. Chen ◽  
J. Silcox

Electron energy loss experiments combined with microscopy have proven to be a valuable tool for the exploration of the structure of electronic excitations in materials. These types of excitations, however, are difficult to measure because of their small intensity. In a usual situation, the filament of the microscope is run at a very high temperature in order to present as much intensity as possible at the specimen. This results in a degradation of the ultimate energy resolution of the instrument due to thermal broadening of the electron beam.We report here observations and measurements on a new LaB filament in a microscope-velocity spectrometer system. We have found that, in general, we may retain a good energy resolution with intensities comparable to or greater than those available with the very high temperature tungsten filament. We have also explored the energy distribution of this filament.


Author(s):  
G.F. Bastin ◽  
H.J.M. Heijligers

Among the ultra-light elements B, C, N, and O nitrogen is the most difficult element to deal with in the electron probe microanalyzer. This is mainly caused by the severe absorption that N-Kα radiation suffers in carbon which is abundantly present in the detection system (lead-stearate crystal, carbonaceous counter window). As a result the peak-to-background ratios for N-Kα measured with a conventional lead-stearate crystal can attain values well below unity in many binary nitrides . An additional complication can be caused by the presence of interfering higher-order reflections from the metal partner in the nitride specimen; notorious examples are elements such as Zr and Nb. In nitrides containing these elements is is virtually impossible to carry out an accurate background subtraction which becomes increasingly important with lower and lower peak-to-background ratios. The use of a synthetic multilayer crystal such as W/Si (2d-spacing 59.8 Å) can bring significant improvements in terms of both higher peak count rates as well as a strong suppression of higher-order reflections.


1991 ◽  
Vol 16 (4) ◽  
pp. 443-457
Author(s):  
R. Lehoucq ◽  
Ph. Durouchouxa
Keyword(s):  
Sn 1987A ◽  

1986 ◽  
Vol 75 ◽  
Author(s):  
Harold F. Winters ◽  
D. Haarer

AbstractIt has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.


2019 ◽  
Vol 100 (2) ◽  
Author(s):  
V. Guadilla ◽  
A. Algora ◽  
J. L. Tain ◽  
J. Agramunt ◽  
J. Äystö ◽  
...  
Keyword(s):  

2021 ◽  
Vol 104 (1) ◽  
Author(s):  
M. Wiedeking ◽  
M. Guttormsen ◽  
A. C. Larsen ◽  
F. Zeiser ◽  
A. Görgen ◽  
...  
Keyword(s):  
Γ Ray ◽  

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