Review on optical, structural and electrical properties of ZnTe thin films: effect of deposition techniques, annealing and doping

2018 ◽  
Vol 7 (2) ◽  
pp. 123-143 ◽  
Author(s):  
Harinder Singh ◽  
Tejbir Singh ◽  
Jeewan Sharma
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Deposition Techniques ◽  
Znte Thin Films

Structural and Electrical Properties of ZnTe Thin Films Deposited at Various Substrate Temperatures

2013 ◽  
Vol 665 ◽  
pp. 80-84
Author(s):  
J.R. Gandhi ◽  
K.D. Patel ◽  
G.K. Solanki
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural Parameters ◽  
Hall Effect Measurement ◽  
Xrd Analysis ◽  
Electrical Parameters ◽  
Glass Substrates ◽  
Structural And Electrical Properties ◽  
Substrate Temperatures ◽  
Znte Thin Films

The structural and electrical properties of ZnTe thin films were investigated as a function of substrate temperature. Vacuum evaporated thin films of Zinc Telluride (ZnTe) of 10kÅ thickness have been deposited on ultrasonically cleaned glass substrates at various substrate temperatures (303K, 373K 448K). Structural parameters were obtained using XRD analysis. It was observed that the films deposited were cubic in nature with a strong (111) texture. Electrical parameters (Hall Effect measurement) have been obtained and studied at various temperatures in the range 303-393K. It is observed that Hall coefficient remains positive throughout the whole temperature range indicating that holes are the majority carriers. The results obtained from structural and electrical parameters study have been correlated and it is found that the thin films deposited at higher substrate temperatures possess increasingly good crystalline structure with improved electrical conductivity along with an increase in carrier concentration and mobility of carriers.

Structural and electrical properties of evaporated ZnTe thin films

Vacuum ◽  
2004 ◽  
Vol 75 (3) ◽  
pp. 189-194 ◽  
Author(s):  
A.A Ibrahim ◽  
N.Z El-Sayed ◽  
M.A Kaid ◽  
A Ashour
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Znte Thin Films

Structural and Electrical Properties of Thermally Evaporated SnxSe1-x Thin Films

2011 ◽  
Vol 3 (10) ◽  
pp. 1-4 ◽  
Author(s):  
Bushra A Hasan ◽  
◽  
Ghuson H Mohamed ◽  
Amer A Ramadhan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties

scholarly journals Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films

2004 ◽  
Vol 7 (2) ◽  
pp. 363-367 ◽  
Author(s):  
Antonio Leondino Bacichetti Junior ◽  
Manuel Henrique Lente ◽  
Ricardo Gonçalves Mendes ◽  
Pedro Iris Paulin Filho ◽  
José Antonio Eiras
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Treatment ◽  
Pzt Thin Films ◽  
Structural And Electrical Properties

scholarly journals Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Laser Irradiation ◽  
Nonlinear Coefficient ◽  
Acceptor State ◽  
Xrd Pattern ◽  
Electrical Studies ◽  
Structural And Electrical Properties

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

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