The valence band relaxation energies of silicon and germanium during photoelectron emission

1978 ◽  
Vol 54 (2) ◽  
pp. 223-225 ◽  
Author(s):  
R.T. Poole
Keyword(s):  
Valence Band ◽  
Photoelectron Emission ◽  
Silicon And Germanium

Photoelectron emission from semiconductors with low valence band dispersion

1982 ◽  
Vol 25 (4) ◽  
pp. 351-354
Author(s):  
V. V. Konev ◽  
V. A. Chaldyshev
Keyword(s):  
Valence Band ◽  
Photoelectron Emission ◽  
Band Dispersion

Silicon and Germanium Network Polyhedra viewed from Soft X-ray Spectroscopy

2007 ◽  
Vol 1044 ◽  
Author(s):  
Jun Tang ◽  
Takeshi Rachi ◽  
Marcos A Avila ◽  
Toshiro Takabatake ◽  
FagZhum Guo ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Theoretical Calculations ◽  
High Energy ◽  
Wave Functions ◽  
X Ray ◽  
Atomic Orbitals ◽  
Energy Facility ◽  
Silicon And Germanium

AbstractThe electronic states of Ba8Ga16Ge30 and Sr8Ga16Ge30 are studied by soft x-ray photoelectron spectroscopy (XPS) at a high-energy facility. In Ba8Ga16Ge30, three bands are resolved in the valence band region. Resonance experiments together with theoretical calculations show that the three band structures in the valence band are mainly constructed by the Ge/Ga 4s and 4p wave functions with little contributions of Ba 5s, 5p and 5d. The valence band of Sr8Ga16Ge30 shows a similar feature to that of Ba8Ga16Ge30. It is clearly shown that the atomic orbitals of Ba and Sr make little hybridization with the orbitals made by the framework polyhedra. This provides the understanding of the thermoelectricity in clathrates, and assists the design in high performance thermoelectric materials in this family.

Valence band photoelectron emission of analyzed with X-ray standing waves

2010 ◽  
Vol 150 (13-14) ◽  
pp. 553-556 ◽  
Author(s):  
Sebastian Thiess ◽  
Tien-Lin Lee ◽  
François Bottin ◽  
Jörg Zegenhagen
Keyword(s):  
Valence Band ◽  
Standing Waves ◽  
Photoelectron Emission ◽  
X Ray

Investigation of irradiation-induced nucleation processes in silicon and germanium

1995 ◽  
Vol 53 ◽  
pp. 224-225
Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov
Keyword(s):  
Room Temperature ◽  
Crystal Size ◽  
Initial Distribution ◽  
Engineering Control ◽  
Size Evolution ◽  
Silicon And Germanium ◽  
Ge Quantum Dot ◽  
And Control ◽  
Germanium Quantum Dots ◽  
Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

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