Dependence of source gas mole ratio on crystalline quality of ZnSe layers grown on (100) ZnSe substrates by atmospheric pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 92 (1-2) ◽  
pp. 196-207 ◽  
Author(s):  
T. Yodo ◽  
T. Koyama ◽  
K. Yamashita
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystalline Quality

High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy

2007 ◽  
Vol 22 (3) ◽  
pp. 219-222
Author(s):  
W. J. Wang ◽  
K. Sugita ◽  
Y. Nagai ◽  
Y. Houchin ◽  
A. Hashimoto ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Symmetric Reflection

The growth temperature dependence of the InN film’s crystalline quality is reported. InN films are grown on sapphire substrates from 570 to 650 °C with low-temperature GaN buffers by metalorganic vapor phase epitaxy (MOVPE). The X-ray rocking curves and reciprocal space mappings of the symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 1 2) are measured with high resolution X-ray diffraction. The results indicate that the crystallinity is sensitive to the growth temperature for MOVPE InN. At growth temperature 580 °C, highly crystalline InN film has been obtained, for which the full-width-at-half-maxima of (0 0 0 2) and (1 0 1 2) rocking curves are 24 and 28 arcmin, respectively. The crystalline quality deteriorates drastically when the growth temperature exceeds 600 °C. Combined with the carrier concentration and mobility, the approach to improve the quality of InN film by MOVPE is discussed.

Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy

2003 ◽  
Vol 94 (3) ◽  
pp. 1527-1530 ◽  
Author(s):  
Tooru Tanaka ◽  
Kazuki Hayashida ◽  
Mitsuhiro Nishio ◽  
Qixin Guo ◽  
Hiroshi Ogawa
Keyword(s):  
Epitaxial Layer ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy

1996 ◽  
Vol 79 (3) ◽  
pp. 1371-1377 ◽  
Author(s):  
R. A. Logan ◽  
S. N. G. Chu ◽  
M. Geva ◽  
N. T. Ha ◽  
C. D. Thurmond
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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