Molecular beam epitaxy growth and characterization of GaSb / AlSb strained-layer superlattices on nonvicinal (001) and 111 (B) GaSb substrates

1990 ◽  
Vol 102 (1-2) ◽  
pp. 147-156 ◽  
Author(s):  
G.P. Schwartz ◽  
G.J. Gualtieri ◽  
W.A. Sunder
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES

1993 ◽  
Vol 42 (7) ◽  
pp. 1121
Author(s):  
ZHOU GUO-LIANG ◽  
SHENG CHI ◽  
FAN YONG-LIANG ◽  
JIANG WEI-DONG ◽  
YU MING-RBN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer ◽  
Strained Layer Superlattices

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

1985 ◽  
Vol 47 (10) ◽  
pp. 1099-1101 ◽  
Author(s):  
L. Goldstein ◽  
F. Glas ◽  
J. Y. Marzin ◽  
M. N. Charasse ◽  
G. Le Roux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strained Layer ◽  
Strained Layer Superlattices

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

Growth of Ge1−xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy

2013 ◽  
Vol 64 ◽  
pp. 543-551 ◽  
Author(s):  
Shaojian Su ◽  
Dongliang Zhang ◽  
Guangze Zhang ◽  
Chunlai Xue ◽  
Buwen Cheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strained Layer ◽  
Strained Layer Superlattices
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